JPS60154682A - P-n homojunction element - Google Patents
P-n homojunction elementInfo
- Publication number
- JPS60154682A JPS60154682A JP59010275A JP1027584A JPS60154682A JP S60154682 A JPS60154682 A JP S60154682A JP 59010275 A JP59010275 A JP 59010275A JP 1027584 A JP1027584 A JP 1027584A JP S60154682 A JPS60154682 A JP S60154682A
- Authority
- JP
- Japan
- Prior art keywords
- polymer
- acetylene
- film
- type
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 claims abstract description 43
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims abstract description 25
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims abstract description 25
- 229910001413 alkali metal ion Inorganic materials 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 21
- 239000002019 doping agent Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 229910052736 halogen Inorganic materials 0.000 abstract description 3
- 150000002367 halogens Chemical class 0.000 abstract description 3
- CBEQRNSPHCCXSH-UHFFFAOYSA-N iodine monobromide Chemical compound IBr CBEQRNSPHCCXSH-UHFFFAOYSA-N 0.000 abstract description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052783 alkali metal Inorganic materials 0.000 abstract description 2
- 150000001340 alkali metals Chemical class 0.000 abstract description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052794 bromium Inorganic materials 0.000 abstract description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 229920006254 polymer film Polymers 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 9
- 238000006116 polymerization reaction Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- SDTHIDMOBRXVOQ-UHFFFAOYSA-N 5-[bis(2-chloroethyl)amino]-6-methyl-1h-pyrimidine-2,4-dione Chemical compound CC=1NC(=O)NC(=O)C=1N(CCCl)CCCl SDTHIDMOBRXVOQ-UHFFFAOYSA-N 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- -1 halide anion Chemical class 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000002932 luster Substances 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Natural products OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001493 electron microscopy Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 229910017050 AsF3 Inorganic materials 0.000 description 1
- 241000218691 Cupressaceae Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
- JCMGUODNZMETBM-UHFFFAOYSA-N arsenic trifluoride Chemical compound F[As](F)F JCMGUODNZMETBM-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000005649 metathesis reaction Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
- WOJCGZMITDEZTA-UHFFFAOYSA-J tetrafluoroiridium Chemical compound F[Ir](F)(F)F WOJCGZMITDEZTA-UHFFFAOYSA-J 0.000 description 1
- 210000003934 vacuole Anatomy 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、高さ密度が0.7g /cc以」−のアセチ
レン高重合体に化学的または電気化学的にドーパントを
ドーピングしてP型アレチレン高重合体とし、次いで該
[)型アレヂレン高重合体にイオン注入法によりアルカ
リ金属イオンを注入してなる整流−特性及び耐久性の良
好なP−nホモ接合素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention involves chemically or electrochemically doping an acetylene polymer having a height density of 0.7 g/cc or more with a dopant to form a P-type aletylene polymer. The present invention relates to a P-n homojunction device having good rectification characteristics and durability, which is obtained by implanting alkali metal ions into the [ ) type alledylene polymer by an ion implantation method.
従来から、無機手力体のP−nホモ接合素子は電気素子
として有用なことから、p−nホモ接合素子についCは
多数の提案がなされ(いる、。Since inorganic P-n homojunction devices are useful as electrical devices, many proposals have been made for P-n homojunction devices.
一方、直鎖状)7レチレン高重合体は、ドーバン1〜を
ドーピングすることにより、その電気伝導爪を10−p
〜10:(S/cn+の広い範囲にわたっC自由に制御
りることかでさることから電気・電r索子どして有用で
あることは既に知られCいる。また、化学的にドーパン
1〜をドーピングして1!7られる1−〕型のアセヂレ
ン高重合体フィル11どr1型のノyL!ブレン高重合
体フィルムを機械的に圧8fりることによって整流特性
を右りる[つ−11小七接合素子が1(1られることも
既に知られている。さらによlこ、予め化学的にドーバ
ン1へをドーピングした]〕型のノlセヂレン高重合体
フィルムに、ざらに化学的に1:′ナーをドーピングし
て、一枚のり7レヂレン高重合体フィルム中にP−n接
合を作製りることb知られている。On the other hand, by doping the linear) 7 retylene polymer with Dovan 1~, its electrically conductive claws can be changed to 10-p.
~10: (C) is already known to be useful for electricity and electric cables because C can be freely controlled over a wide range of S/cn+. The rectifying properties are improved by mechanically applying a pressure of 8 f to a 1-] type acetylene high polymer film which is doped with 1 to 1!7. It is already known that a 1-11 small-7 junction element can be formed into a 1-1 (1) type of polymer film by chemically doping the dopan 1 in advance. It is known to chemically dope 1:' to create P-n junctions in a single adhesive 7 resin polymer film.
しかし、これらの方法で用いられているアレヂレン高重
合体フィルムは、いわゆる白州7]′(特公昭/1g−
32581号)のh払によって得られるに、:Jざ密度
が0,7Q /cc未満の多孔質のアレヂレン高車台体
フィルムであるため、得られるP−n接合素子の整流特
性は必ずしも満足できるものではないばかりではなく、
耐久性、特に酸化安定性は極めて小さいものであった。However, the alledylene polymer film used in these methods is the so-called Hakushu 7]' (Tokukosho/1g-
32581), the rectifying characteristics of the resulting P-n junction element are not necessarily satisfactory because the film is a porous Aledylene high vehicle body film with a J density of less than 0.7Q/cc. Not only is it not;
Durability, especially oxidation stability, was extremely low.
その上、この多孔質フィルムに化学的にドーパンI・を
ドーピングして作製した])−n小モ接合素子は、長簡
間放置した場合、ドーバン1〜の移動が起り、接合が破
壊されて整流性1<tが七しく悪化りるという現象があ
った。Moreover, when the porous film was chemically doped with Dopane I, the bond was destroyed due to migration of Dopane I when left for a long time. There was a phenomenon in which the rectification property 1<t deteriorated significantly.
本発明者等は上記従来技術の欠点を改良づべく種々検問
した結果、本発明に到達した。The present inventors conducted various investigations in order to improve the drawbacks of the above-mentioned prior art, and as a result, they arrived at the present invention.
即ち、本発明は、嵩さ密度がojg /cc以上のj7
ヒヂレン高重合体に化学的または電気化学的にドーパン
トをドーピングし−UP型アセチレン高重合体とし、次
いで該P型アレヂレン高重合体にイオン注入法によりア
ルカリ金属イオンを注入してなる整流特性及び耐久11
の良QIなP−n小モ接合素子に関づるものである。That is, the present invention provides j7 having a bulk density of ojg/cc or more.
Rectifying properties and durability obtained by chemically or electrochemically doping a dopant into a hytylene polymer to obtain a UP-type acetylene polymer, and then injecting alkali metal ions into the P-type acetylene polymer using an ion implantation method. 11
The present invention relates to a small P-n junction element with a good QI.
本発明の1)−1ホ七接合素子は、高さ密度が0.7Q
/cc以上の非多孔質アセチレン高重合体が用いられ
、さらに、アルカリ金属のドーピング法としてイオン注
入法が用いられているので、従来の多孔質アセチレン高
重合体を用い、化学的ドーピング法で作製した1、)
−11ホモ接合素子に比較し良好な整流特性と耐久性を
右している。本発明で用いられるアセチレン高重合体ホ
は、高さ密度が0.7g /cc以上のものであり、好
ましくは0.8g/CC以上のもの、特に好ましくは0
.9g /cc以上の非多孔質体である。アセチレン高
重合体の嵩ざ密度が0.7g /cC未満では、整流特
性及び耐久性の良好なp −n接合素子が寄られ難い。The 1)-1-ho seven junction element of the present invention has a height density of 0.7Q
/cc or higher is used, and ion implantation is used as the alkali metal doping method. 1,)
-11 homojunction element has better rectifying characteristics and durability. The acetylene high polymer used in the present invention has a height density of 0.7 g/cc or more, preferably 0.8 g/cc or more, and particularly preferably 0.8 g/cc or more.
.. It is a non-porous material with a weight of 9 g/cc or more. If the bulk density of the acetylene high polymer is less than 0.7 g/cC, it is difficult to form a p-n junction element with good rectification characteristics and durability.
上記の高高さ密度を有覆るアヒヂレン高小台の製造方法
には特に制限はないが、具体例としては特開昭55−1
28419号、同55−129404号、同56−10
428号、同5G−63448号、同56−13313
3弓、同56−131636号、同5G−115305
号、同57−53324号、特願昭57−136826
号、同57− ’136827号、特公昭48−325
81号のノ゛コ法で製造されるアはヂレン高重含体を加
圧成形または延伸成形する方法、持久ujl!i6−4
5365号の方法で得られる延伸されたアセチレン高重
合体、特願昭57 147717 @笠の方法て1qら
れる粉末状アレチレン高4(合体を加圧下で成形加−I
りる方法等のごとぎチーグラー・ナツタ触媒を使用して
製造し1こj)Uチレン高重合体から高嵩ざ密度のアし
Jレン高壬台体を得る方法、ルツテインガー触媒、メタ
セシス触媒等を使用して得られるアセチレン高重合体を
加にして高嵩さ密度のア(′!ヂレン高重合体を1qる
方法及び重合時に高高さ密度のアレヂレン高単合体ノイ
ルムを製造りる方法等をあげることかできる。There are no particular restrictions on the manufacturing method of the Ahidilene high and small platform having the above-mentioned high height density, but a specific example is JP-A No. 55-1.
No. 28419, No. 55-129404, No. 56-10
No. 428, No. 5G-63448, No. 56-13313
3 bows, No. 56-131636, No. 5G-115305
No. 57-53324, patent application No. 57-136826
No. 57-'136827, Special Publication No. 48-325
A method of pressure molding or stretch molding of the adilene high content material produced by the sawing method of No. 81, durability ujl! i6-4
Stretched acetylene high polymer obtained by the method of No. 5365, powdered acetylene high 4 obtained by the method of Patent Application No. 57 147717 @ Kasa (combination is molded under pressure - I
1) A method for obtaining a high bulk density AJ-len high-density base from a U-tyrene high polymer, a Rutzteinger catalyst, a metathesis catalyst, etc. A method of adding 1 q of acetylene high polymer obtained by using acetylene high polymer with high bulk density ('! I can give you something.
本発明C用いられるアセチレン高重合体の形状や結晶性
等について特に制限はないが好ましくは繊玲11状微結
晶(フィブリル)構造をイjりる高結晶性のものである
。Y〕型アレチレン高車合体を製造づ−る際のドーピン
グ方法は、化学的ドーピングA3よび電気化ン゛的ドー
ピングのいずれの方法を採用してもよい。There are no particular limitations on the shape, crystallinity, etc. of the acetylene polymer used in the present invention C, but it is preferably a highly crystalline polymer having a 11-shaped microcrystalline (fibril) structure. The doping method for manufacturing the [Y] type aretylene high vehicle assembly may be either chemical doping A3 or electrochemical doping.
化学的にドーピング−4るドーバン1〜としては、従来
知られている神々の電子受容性化合物、即ち、(I)ヨ
ウ素、臭素およびヨウ化臭素の如ぎハロゲン、(n)五
フッ化ヒ素、五フッ化アンチ七ン、四フッ化りイ素、五
、+=化リン、万フッ化リン、塩化アルミニウム、臭化
アルミニウム\おJ、びフッ化アルミニウムの如き金属
ハロゲン化物、(m)硫酸、硝酸、フルA口硫酸、1〜
リフルAロメタン硫M tj 、J、ヒ’) a ml
5J’+ MO(7) 如キフD h ンu、(IV
) E酸化インウ、二酸化窒素、ジフル′A[1スル
ボニルバーAキシド、酸素の如き酸化剤、(V)Aa
0文04、(Vl ) v゛ttヘラシアノコニブン、
−11−ラシアノキノジメタン、タロラニール、2,3
−ジクロル−5,6−ジシj/ノパラベンゾ4ノン、2
゜3ンブロムー5,6−シシ7ノバラベンゾキノン客を
あげることができる。Chemical doping-4 dobans 1 to 4 include conventionally known electron-accepting compounds, namely (I) halogens such as iodine, bromine and bromine iodide, (n) arsenic pentafluoride, Metal halides such as anti-sulfuric acid pentafluoride, iridium tetrafluoride, phosphorus, phosphorus perfluoride, aluminum chloride, aluminum bromide and aluminum fluoride, (m) sulfuric acid , nitric acid, full A sulfuric acid, 1~
Riful A romethane sulfur M tj , J, H') a ml
5J'+ MO(7) Like D h n u, (IV
)E Indium oxide, nitrogen dioxide, diflu'A [1 sulfonyl bar A oxide, oxidizing agent such as oxygen, (V)Aa
0 Sentence 04, (Vl)
-11-lacyanoquinodimethane, talolanil, 2,3
-dichloro-5,6-dicyj/noparabenzo4non, 2
゜3 Nbromo 5,6-shishi 7 Novara benzoquinone can be mentioned.
一方、電気化学的にドーピングづるドーパントとし−C
は、(i ) P F二、5bFe、AsF3゜5bc
i;の如きVa族の元素のハロゲン化物アニオン、BF
3の如き1lla族の元素のハロゲン化物アニオン、I
−<Ia )、Bl’ 、C久−の如きハロゲンアニA
−ン、C久0;の如ぎ過J蕩素酸アニオンなどの陰イオ
ン・ドーパン1へをあげることができるが、必ずしもこ
れ等に限定されるものではない。On the other hand, if the dopant is electrochemically doped -C
(i) PF2, 5bFe, AsF3゜5bc
i; a halide anion of a group Va element such as BF;
Halide anions of elements of group 1lla such as 3, I
-<Ia), Bl', Cku- such as halogen animate A
Examples include, but are not limited to, anions such as oxalic acid anions such as -n, C and 0;, but are not necessarily limited to these.
上述の陰イオン・ドーパン1−を与える化合物の具体例
としてはり、i PF6. Li Sb Fs 、 l
−iΔ S [二 a 、 Li C101、Na 1
. Na PFa。A specific example of a compound that provides the above-mentioned anion dopane 1- is iPF6. Li Sb Fs, l
-iΔS [2 a, Li C101, Na 1
.. Na PFa.
Na 3b Fa 、NaΔS Fe 、 Na Cf
1−0< 、 KI、KP「o 、KSb Fa 、に
ΔSF6.KO交Oq、((n −Bu )4N)”
・(As Fe )−。Na3bFa, NaΔSFe, NaCf
1-0<, KI, KP "o, KSb Fa, to ΔSF6.KO Oq, ((n-Bu)4N)"
・(AsFe)-.
〔(ロ −Bu)iN)″ ・ (1〕FB )−、(
<n13u )4 N)” ・C9−0: 、LI A
uC1< 。[(ro-Bu)iN)'' ・ (1] FB )-, (
<n13u)4 N)" ・C9-0: , LI A
uC1<.
Li 13Fi 、No−As Fe 、NO2・As
Fa 。Li 13Fi , No-As Fe , NO2・As
Fa.
No−BF4 、 NO2・BF4 、 No−PF5
をあげることがCきるが必ずしもこれ等に限定されるも
のではない。これらのドーパン1〜は一種類、または二
種類以上を混合して使用してもよい。No-BF4, NO2・BF4, No-PF5
C can be mentioned, but it is not necessarily limited to these. These Dopanes 1 to 1 may be used alone or in combination of two or more.
前記以外の陰イオン・ドーパントとしては1−I F
2ア二Aンがある。Anion dopants other than the above include 1-IF
There is 2A and 2A.
ドーバン1〜のドーピング徂は、アヒチレン高重合体の
繰り返しllj位(CH)当り20モル%以下、好まし
くは0.01〜15モル%であることが望ましい。It is desirable that the doping level of Dovan 1 to 2 is 20 mol % or less, preferably 0.01 to 15 mol %, per repeating llj position (CH) of the ahithylene polymer.
化学的または電気化学的にドーパントをドーピングした
P型アレチレン高車合体にイオンを汀人づる方法1よ、
特に制限はイfく、一般には数KV−・数百+<Vに加
速されたイオンをとL人するji 7)tが採用される
が、)′セヂレン高重合体の分解・架橋1に応を抑制づ
る点からは加速電圧は150KV以“1・が好ましく、
1001<V以下が特にりYましい。イオン源として
は高周波放電型、電子衝撃型、γ゛−1Δ−1Δプラズ
マ1ヘロン型れのqllのものし用いることかできる。Method 1: Adding ions to a P-type alethylene high-vehicle combination chemically or electrochemically doped with a dopant.
There are no particular restrictions, and in general, ions accelerated to several KV-・several hundred+<V are adopted. From the viewpoint of suppressing the reaction, it is preferable that the accelerating voltage is 150 KV or more.
It is particularly preferable that 1001<V or less. As the ion source, a high frequency discharge type, an electron impact type, or a γ-1Δ-1Δ plasma 1 Heron type qll type can be used.
本発明にお【ノるイオンとしではアルカリ金属イオンが
用いられる。アルカリ金属イオンの具体例どしては、L
i l、Na−ト、K”、Rb )。In the present invention, an alkali metal ion is used as the ion. A specific example of an alkali metal ion is L
il, Na-to, K”, Rb).
O5+の各イオンをあげることができる。Each ion of O5+ can be mentioned.
アルカリ金属イオンの注入h1は、アレブレン高重合体
の繰り返し単位(CI−1)当り20〔ル%以上、好ま
しくは0.01〜15モル%であることが望ましい。The implantation h1 of alkali metal ions is desirably 20 mol % or more, preferably 0.01 to 15 mol %, per repeating unit (CI-1) of the alebrene high polymer.
本発明のp−nホ”E接合素子は、良好4T整流特性を
有し、かつ耐久性、特に酸化安定性が良好ぐあるから、
電気・電子素子として極めて有用であり、具体例として
は1〜ランシスター、太陽電池等として使用づることが
できる。The p-n photo-E junction element of the present invention has good 4T rectification characteristics and good durability, especially oxidation stability.
It is extremely useful as an electric/electronic element, and can be used as specific examples such as 1~Run Sister, solar cells, etc.
以下、実施例ににって本発明をざらに詳細に説明ηる。Hereinafter, the present invention will be explained in detail with reference to Examples.
実施例 1
[高い高さ密度を右するア[ブレン高重合体の¥4J造
]
窒素ガスで完全に置換した1交のガラス製反応容器に、
重合溶媒どして常法に従って精製した(ヘル1ン200
ml、触媒とし゛Cデ1〜ラブドキシチタニウム2.
94ミリ−しル及び1〜リエヂルアルミニウム1.34
ミリ七ルを順次に室温で仕込んで触媒溶液を調製した。Example 1 [A for achieving high height density [¥4J construction of Bren high polymer] In a straight glass reaction vessel that was completely replaced with nitrogen gas,
Purification was carried out according to a conventional method using a polymerization solvent (Helton 200).
ml, as a catalyst 1~rhabdoxytitanium 2.
94 millimeters and 1 to riegil aluminum 1.34
A catalyst solution was prepared by sequentially charging milli7yl at room temperature.
触媒溶液は均−溶液であった。次いで、反応容器を液体
窒素で冷却して系中の窒素ガスを真空ポンプで排気した
。−78°0に反応容器を冷却し、触媒溶液を静置した
状態で1気圧の圧ツノの精製アセブレンガスを吹き込ん
だ。重合の初期に系全体は寒天状になった。アレブレン
ガスの圧ツノを1気圧に保ったままで10時間重合反応
をそのまま継続した。系は赤紫色を呈した寒天状であっ
た。重合終了後、未反応のアレブレンガスを除ムし、系
の温度を一78℃に保ったまま 200 mQの精製1
〜ルエンで4回繰り返し洗浄し、1ヘルエンで膨潤した
膜厚が約0.5cmのシー]へ状膨潤アセチレン高重合
体を得た。この膨潤アレブレン高重合体は、300〜5
0’0人の径の繊維状微結晶くフィブリル)が規則的に
絡み合った膨潤物であり、粉末状゛1′J塊状のポリマ
ーは生成していなかった5゜このシー1〜状膨潤アヒチ
レン高重合体をり[]ムメツキしたフコニロ板にはさみ
、室温で100kQ /・HI3の圧ツノで予備プレス
し、次いで15ton 7cm2の圧力で高圧プレスし
て赤褐色の金属光沢を持った均一で可撓性のある膜厚1
20μmのアb ’fレン高重合体のフィルムを得た。The catalyst solution was a homogeneous solution. Next, the reaction vessel was cooled with liquid nitrogen, and the nitrogen gas in the system was exhausted using a vacuum pump. The reaction vessel was cooled to −78°0, and while the catalyst solution was left still, purified acerene gas at a pressure of 1 atm was blown into the reactor. At the beginning of polymerization, the entire system became agar-like. The polymerization reaction was continued for 10 hours while maintaining the pressure of the alebrene gas at 1 atm. The system was agar-like with a reddish-purple color. After the polymerization was completed, unreacted aleben gas was removed, and 200 mQ of purification 1 was carried out while keeping the temperature of the system at -78°C.
- Washing was repeated four times with toluene to obtain a swollen acetylene polymer having a film thickness of about 0.5 cm. This swollen allebrene high polymer has a molecular weight of 300 to 5
It was a swollen product in which fibrous microcrystals (fibrils) with a diameter of 0'0 were regularly intertwined, and no powdery polymer was formed. The polymer was sandwiched between sticky Fuconiro plates, pre-pressed at room temperature with a pressure horn of 100 kQ/・HI3, and then high-pressure pressed at a pressure of 15 tons 7 cm2 to form a uniform and flexible product with a reddish-brown metallic luster. A certain film thickness 1
A 20 μm film of ab'frene high polymer was obtained.
このフィルムは511.’1間室温で真空乾燥した。得
られたアレブレン高重合体フィルムの窩さ密痘は1.0
5g/ccで、電1′顕微鏡観察よりこのノフイルムは
非多孔Tl1(゛あった。This film is 511. It was vacuum dried for 1 hour at room temperature. The vacuole of the obtained alebrene high polymer film was 1.0.
At 5 g/cc, electron microscopy revealed that the film was non-porous.
また、このアセチレン高中合体フィルムはシス含量が9
0%、20℃での電気伝導度(直流四p:;1子法)が
4,8xH1−’Ω−1・Cll1−1の1〕型型半体
であった。In addition, this acetylene high-medium polymer film has a cis content of 9
The electrical conductivity at 0% and 20° C. (DC 4p:; 1 child method) was 4.8×H1-'Ω-1.Cll1-1 type half.
[ドーピングの実験J
」上記の方法で得られた膜厚が120μ川で高さ密度が
1.05g/ccのアセブレン高重合体フィルムにす、
幅が0,5cIllで長さが2,0CI11の小片を切
り出し、白金線に機械的に圧着固定して正極とし、負極
としてリヂウム金属を用い、LiC又01の温度が0.
3モル/久のプロピレンカーボネート溶液を電解液とし
て用い、一定電流下(0,09mA)で15時間ドーピ
ングを行った。ドーピング終了後ドープされたアセブレ
ン高重合体フィルムをプ[JビレンノJ−ボネー1〜で
洗浄した。ドープされたアセブレン高車合体フィルlX
&は金色の金属光沢を右し、その組成は元素分析より
導度(直流四端子法)は320Q −’ −am−1の
P型半導体であった。[Doping Experiment J] Acebrane high polymer film with a film thickness of 120μ and a height density of 1.05 g/cc obtained by the above method,
A small piece with a width of 0.5cIll and a length of 2.0CI11 was cut out and mechanically crimped and fixed to a platinum wire to serve as a positive electrode. Lidium metal was used as a negative electrode, and the temperature of LiC or 01 was set to 0.
Doping was carried out for 15 hours under constant current (0.09 mA) using a 3 mol/day propylene carbonate solution as the electrolyte. After the doping was completed, the doped acebrene polymer film was washed with [J-Birenno J-Bone 1~]. Doped Aceblen high car combination fill lX
& indicates a golden metallic luster, and elemental analysis revealed that the composition was a P-type semiconductor with a conductivity (direct current four terminal method) of 320Q-'-am-1.
[イオン注入及び整流特性実験]
上記の方法で得られた1つ型アはヂレン高重含体フィル
ムの片面に高周波放電型をイオン源とじて使用し、Na
Iを加速電圧−50KVでドーズ(Dose ) F)
x= 6x101らCm−2だ(ノイΔン注入し、1)
−rlホモ接合素子を作製した。イオン汀人終Y後、第
1図に示すように金を蒸着して゛心棒とした。[Ion implantation and rectification characteristics experiment] One type A obtained by the above method was made by using a high frequency discharge type as an ion source on one side of the dylene heavy content film, and
Dose F) at accelerating voltage -50KV
x = 6x101 et Cm-2 (noy Δn injection, 1)
-rl homozygous devices were produced. After the ion treatment was completed, gold was deposited on it to form a mandrel, as shown in Figure 1.
第1図は、本発明0ルー具体例である金711 ’I’
j 1)nij・[接合素子の断面概略図であり、1
t、を導電(へ、2はC文OλをドープしたP型〕2レ
チレン高重合体部、3はNa”を注入したn型アヒチレ
ン高中合体部を承り。Figure 1 shows gold 711 'I' which is a specific example of the present invention.
j 1) nij・[This is a cross-sectional schematic diagram of a bonding element, and 1
t, is conductive (2 is a P type doped with C Oλ) 2 is a retylene high polymer part, 3 is an n type ahytylene high medium polymer part doped with Na''.
このように作製した金tta 41)r)ホモ接合素子
を用いて、この接合素子の両端に電圧を印加して流れる
電流値を測定して電圧と電流の関係を調べたどころ、第
2図のにうな曲線となり、印加型J−■−が士/IVで
の整流比は2/10−rあった1、また、j!ノられた
P−nホモ接合素子を空気中に7日間放置後の整流比は
225であった。Using the gold tta 41) r) homojunction element fabricated in this way, we applied a voltage to both ends of this junction element and measured the flowing current value to investigate the relationship between voltage and current. The rectification ratio in the application type J-■-ga/IV was 2/10-r1, and j! The rectification ratio of the blown P-n homojunction device after being left in the air for 7 days was 225.
比較例 1
[アセブレン高重合体の製造」
窒素雰囲気下で内容積500iのガラス製反応容器に、
5.11n!l(15,099モル)のチタニウム゛フ
゛1−ラブトキ4ノイドを加え、20.0+mのトルエ
ンに溶解さけ、次いで5.4mR<40ミリモル)の1
〜リエヂルアルミニウムを撹拌しながら加えC反応さけ
触媒溶液を調製した。Comparative Example 1 [Manufacture of acebrene high polymer] In a glass reaction vessel with an internal volume of 500 i under a nitrogen atmosphere,
5.11n! 1 (15,099 mol) of titanium phenylene chloride was added and dissolved in 20.0+ m toluene, then 5.4 mR < 40 mmol) of 1
- Riedyl aluminum was added with stirring to prepare a C reaction catalyst solution.
この反応容器を液体窒素で冷却して、系中の窒素ガスを
真空ポンプで排気し、次いでこの反応容器を一78℃に
冷却した。The reaction vessel was cooled with liquid nitrogen, the nitrogen gas in the system was evacuated using a vacuum pump, and then the reaction vessel was cooled to -78°C.
反応容器を回転さけて触媒溶液を反応容器の内壁に均一
に付着さけた後、反応容器を静置させた状態で直りに1
気圧の圧力の精製アセチレンガスを導入して重合を開始
した。重合量りflと同時に反応容器の内壁に金属光沢
を有づるアセチレン高重合体が析出した。−78℃の温
度で、アレブーレン圧を1気圧の状態に保って1時間重
合反応を行なった後、未反応のアはブレンを真空ポンプ
で排気して重合を停止した。窒素雰囲気下で残存触媒溶
液を注射器で除去した後、−78℃に保ったまま精製i
〜ルエン1oo7で6回洗浄を繰り返し、次いで空温で
真空乾燥した3、触媒溶液が反応器内壁に(=I着した
部分に、その部分と面積が等しく、厚さが90μn1で
シス含量が98%の膜状アセチレン高重合体が得られた
。この膜状アセブレン高重合体は、電気伝導度が2.5
x 1叶8Ω−’ −Hl−1の1〕ハ゛ノ″4′−合
体(゛あった。また、この膜状アセブレン高重合体の高
さ密度は0.52(J/CCであった。電子顕gl鏡観
察J:りこの膜状アレブレン高重合体は〕、イブリルが
無秩序に絡み合一)だ多孔質であった。After avoiding rotation of the reaction vessel to prevent the catalyst solution from adhering uniformly to the inner wall of the reaction vessel, immediately add 1
Polymerization was initiated by introducing purified acetylene gas at a pressure of atmospheric pressure. Simultaneously with the polymerization fl, an acetylene high polymer with metallic luster precipitated on the inner wall of the reaction vessel. After the polymerization reaction was carried out for 1 hour at a temperature of -78 DEG C. while maintaining the pressure of alleburene at 1 atm, the unreacted abrane was evacuated with a vacuum pump to stop the polymerization. After removing the residual catalyst solution with a syringe under a nitrogen atmosphere, purification was carried out while keeping it at -78 °C.
The catalyst solution was washed 6 times with 1oo7 of luene, and then dried under vacuum at air temperature. % film-like acetylene polymer was obtained.This film-like acetylene polymer had an electrical conductivity of 2.5.
x 1 8Ω-'-Hl-1 was present.The height density of this film-like aceblene polymer was 0.52 (J/CC). Electron microscopy observation J: Riko's membranous alebrene polymer was porous with ibrils intertwined in a disordered manner.
「ドーピングの実験」
上記の方法で得られた多孔質で高さ密度が0.52a/
ccの膜状アセブレン高重合体を用い(ドーピング時間
を8.9時間とした以外は実施例1と全く同じドーピン
グ条イ!1でドーピングをtjっで組成が(C1−1(
Cり01) 〕アの導電性膜状ア060
しルン高重合体を15また。このう9電1<J−Its
j状’j’ I?ブレン高重合体は電気伝導度が290
0−1・cnじ1のP型半導体であった。"Doping experiment" The porous material obtained by the above method has a height density of 0.52a/
The composition was changed to (C1-1(
C01)] Conductive film-like A060 15 layers of high polymer. Kou 9den 1<J-Its
j-shaped 'j' I? Brene high polymer has an electrical conductivity of 290
It was a P-type semiconductor of 0-1·cnji1.
しイオン注入及び整流特性実験]
[〕型アレヂレン高重合体として上記の1j法で1!ノ
られた多孔質の膜状アセチレン高車合体を用いた以外は
実施例1と全く同様の方法でNa→のイΔン注入を行な
い、P−nホモ接合素子を作製した。Ion implantation and rectification property experiment] [1] using the above 1j method as an alledylene polymer of type 1! A Pn homojunction device was fabricated by injecting Na➝➝ in the same manner as in Example 1 except that a porous film-like acetylene high-vehicle assembly was used.
以下、実施例1と全く同様の方法で整流特性を測定した
。その結果、印加電圧が±4Vでの整流比は62であっ
た。まlζ、i!7られたP−nホモ接合素子を空気中
に7H間放置後の整流比は14であった。Hereinafter, rectification characteristics were measured in exactly the same manner as in Example 1. As a result, the rectification ratio was 62 when the applied voltage was ±4V. Ma lζ, i! The rectification ratio of the Pn homojunction device after leaving it in air for 7 hours was 14.
化較例 2
実施例1で1qられたC交Oλイオンをドープした非多
孔質のアセブレン高重合体フィルムの片面学ドーピング
を行4い、P−nホモ接合素子を作製した。この接合素
子の整流特性を実施例1と全く同様の方法ぐ測定した。Chemical Comparative Example 2 A non-porous aceblene polymer film doped with the C-cross Oλ ions prepared in Example 1 was single-sidedly doped to produce a Pn homojunction device. The rectification characteristics of this junction element were measured in exactly the same manner as in Example 1.
イの結果、印加電圧が±4Vでの整流比は53であった
。また、寄られたP−nホモ接合素子を空気中に71」
間数ia後は接合が壊れ、整流特性を示さなかった。As a result of (a), the rectification ratio was 53 when the applied voltage was ±4V. In addition, the assembled P-n homojunction element is 71'' in the air.
After several ia, the junction was broken and no rectifying properties were exhibited.
実施例 2
実施例1で得られた非多孔質のアセブレン高重合体フィ
ルムにヨ1り素の蒸気を接触させてヨウ素のドープされ
た電気伝導度が2 X 10−3 C)−1・cm−+
のP型半導体を得た。このI)型アレヂレン高車合体フ
ィルムの片面に高周波放電型をイオン源とし−C使用し
、K’を加速電ルー12K Vでドース(D ose
) 吊−3x 1016 cm−2だ(ノイA−ン注入
しく1) nホモ接合素子を作製した。この接合素子に
実施例1と同様に金を蒸着して電極としその整流特性を
みた。その結果、印加電圧が↓4Vでの整流比は207
であった。また、檜!7られたP−「)小−し接合素子
を空気中に7日間放置後のI81!流比は19:(であ
った。Example 2 The non-porous acebrene polymer film obtained in Example 1 was doped with iodine by contacting it with iodine vapor and the electrical conductivity of the iodine-doped film was 2 x 10-3 C)-1 cm. −+
A P-type semiconductor was obtained. A high-frequency discharge type ion source was used as an ion source on one side of the I) type Aledilene high vehicle assembly film, and K' was dosed at an accelerating electric current of 12 KV.
) A homojunction device with a thickness of 3 x 1016 cm-2 (with a noise injection method of 1) was fabricated. Gold was vapor-deposited on this junction element in the same manner as in Example 1, and its rectification characteristics were examined. As a result, the rectification ratio is 207 when the applied voltage is ↓4V.
Met. Also, cypress! The I81! flow ratio was 19:( after the P-") small bonded element was left in the air for 7 days.
第1図は本発明の一只体例である金属蒸着1)nホモ接
合素子の断面概略図であり、り12図(31木発明の実
施例1にd3りるp−nホし接合糸rを用いて測定した
す:警流特+11の電流ど電1−「の関係を小り。
た図である。
1・・・金電極
2・・・C久O;をドープした1〕型
アレヂ1ノン11)重合体部
3・・・Na+を注入した
n型アセヂレン高重合体部FIG. 1 is a schematic cross-sectional view of a metal vapor-deposited 1)n homojunction element which is a single example of the present invention; This is a diagram showing the relationship between the current and the current of the current +11 measured using the 1. 1Non 11) Polymer part 3...N-type acetylene high polymer part injected with Na+
Claims (1)
化学的または電気化学的にドーパン1〜をドーピングし
てP型アレヂレン高重合体とし、次いで該P型アセヂレ
ン高重合体にイオン注入法によりアルカリ金属イオンを
注入してなる1)−[]ホモ接合素子。Dopanes 1 to 1 are chemically or electrochemically doped into an acetylene polymer having a height density of 0.79/cc or higher to obtain a P-type acetylene polymer, and then the P-type acetylene polymer is subjected to ion implantation. 1)-[] homojunction device formed by implanting alkali metal ions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59010275A JPS60154682A (en) | 1984-01-25 | 1984-01-25 | P-n homojunction element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59010275A JPS60154682A (en) | 1984-01-25 | 1984-01-25 | P-n homojunction element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60154682A true JPS60154682A (en) | 1985-08-14 |
Family
ID=11745758
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59010275A Pending JPS60154682A (en) | 1984-01-25 | 1984-01-25 | P-n homojunction element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60154682A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2600820A1 (en) * | 1986-06-25 | 1987-12-31 | Univ Limoges | PROCESS FOR PRODUCING POLYMERIC SEMICONDUCTORS |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5812370A (en) * | 1981-07-15 | 1983-01-24 | Hitachi Ltd | High molecular semiconductor element |
-
1984
- 1984-01-25 JP JP59010275A patent/JPS60154682A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5812370A (en) * | 1981-07-15 | 1983-01-24 | Hitachi Ltd | High molecular semiconductor element |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2600820A1 (en) * | 1986-06-25 | 1987-12-31 | Univ Limoges | PROCESS FOR PRODUCING POLYMERIC SEMICONDUCTORS |
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