JPS60126833A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS60126833A JPS60126833A JP22264483A JP22264483A JPS60126833A JP S60126833 A JPS60126833 A JP S60126833A JP 22264483 A JP22264483 A JP 22264483A JP 22264483 A JP22264483 A JP 22264483A JP S60126833 A JPS60126833 A JP S60126833A
- Authority
- JP
- Japan
- Prior art keywords
- internal electrode
- plasma
- etching
- chamber
- axial direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 abstract 1
- 238000009826 distribution Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 2
- 241000287828 Gallus gallus Species 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、牛導体集積回路等の製造に用いられるドラ
イエツチング装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a dry etching device used for manufacturing conductor integrated circuits and the like.
従来のドライエツチング装置としては第１図に示でもの
があった。この図において、１は外側電極を兼ねるチャ
ンバー、２は真空排気口、３は内部試料保持機ＩＩｌ兼
ねる内部電極、４は前記内部電極３．チャンパートｌ保
持するペースプレート（台板）、５は試料、６は前記チ
ャンバー１とベースプレート４との間の真空シール用０
リング、１は前記チャンバー１内に設げられたガス導入
バイブ、８は高周波電源である。A conventional dry etching apparatus is shown in FIG. In this figure, 1 is a chamber that also serves as an outer electrode, 2 is a vacuum exhaust port, 3 is an internal electrode that also serves as an internal sample holder IIl, and 4 is the internal electrode 3. A pace plate (base plate) for holding the chamber part l; 5 is a sample; 6 is a vacuum seal 0 between the chamber 1 and the base plate 4;
A ring, 1 is a gas introduction vibrator provided in the chamber 1, and 8 is a high frequency power source.
ここで、内部電極３は通常多角型の柱状をしており、そ
の多面体面３ａＫ試料５が保持されるよ５に設置される
。チャンバー１は内部電極３を取り囲むように位置しに
、例えば円筒屋ｔしている。Here, the internal electrode 3 is usually in the shape of a polygonal column, and is installed on its polyhedral surface 3aK so that the sample 5 is held therein. The chamber 1 is located so as to surround the internal electrode 3, and has a cylindrical shape, for example.
次に、動作について説明する。Next, the operation will be explained.
真空排気口２より真空ポンプ（図示せず）等により排気
しつつガス導入パイプ１のガス導入口よりエツチングガ
スをチャンバー１内に導入し、チャンバー１内な低圧（
１０” 〜１０−”Ｔｏｒｒ程度ンに保ち、高周波電源
８により内部電極３に高周波電力な印加し、接地された
チキンバー１との間で商用波枕よるプラズマを発生させ
、内部電極３に設置した試料５をエツチングする。ここ
で、内部電極３は試料５の数を増すため多角型の柱状ｔ
しており、軸方向のプラズマの分布ひいてはエツチング
レート０分布を均一に保持するため、ガス導入口の形状
に種々の工夫がなされている。しかしながらエツチング
の特性、例えば被エツチング材とマスク材とのエツチン
グ選択性、または複数の被エツチング材どうしのエツチ
ング選択性の精密コントロールを行おとしてガス圧力、
流量を変えるとき、ガス導入口の形状が固定されている
定め最適なプラズマの分布を得ることが困難である。Etching gas is introduced into the chamber 1 through the gas inlet of the gas inlet pipe 1 while being evacuated through the vacuum exhaust port 2 by a vacuum pump (not shown), etc., and the low pressure (
The temperature was maintained at about 10" to 10-" Torr, and high-frequency power was applied to the internal electrode 3 by the high-frequency power source 8 to generate plasma due to a commercial wave between the grounded chicken bar 1 and the plasma that was installed on the internal electrode 3. Etch sample 5. Here, the internal electrode 3 has a polygonal columnar shape t to increase the number of samples 5.
In order to maintain a uniform distribution of plasma in the axial direction and thus a uniform zero etching rate distribution, various improvements have been made to the shape of the gas inlet. However, in order to precisely control the etching characteristics, such as the etching selectivity between the etched material and the mask material, or the etching selectivity between multiple etched materials, the gas pressure,
When changing the flow rate, it is difficult to obtain a fixed optimal plasma distribution with a fixed gas inlet shape.
また、さらに試料５の処理数を上げるため軸方向に長大
な形状のチャンバー１．内部電極３のレイアワト設計を
行うとき、上記の問題はさらに大きくなる。In addition, in order to further increase the number of samples 5 processed, the chamber 1 is designed to be elongated in the axial direction. When designing the layout of the internal electrodes 3, the above problem becomes even more serious.
この発明は、上記のような従来のものの欠点を除去する
ためになされたもので、チャンバー内部忙内部電極を囲
み、上下（軸方向）Ｋ可動するガス導入口を設け、プラ
ズマの分布を任意に可変できるようにして、エツチング
特性の均一化を図ることができる精密なプラズマエツチ
ング装置を提供することを目的としている。以下、この
発明の一実施例を図面を用いて説明する。゛
〔発明の実施例〕
第３図、第４図はこの発明の一実施例を示すプラズマエ
ツチング装置の縦断面図および平断面図である。こｉら
の図において、１〜Ｂは第１図。This invention was made in order to eliminate the above-mentioned drawbacks of the conventional ones.A gas inlet that surrounds the internal electrode of the chamber and moves up and down (in the axial direction) is provided to arbitrarily control the distribution of plasma. It is an object of the present invention to provide a precise plasma etching apparatus that can make the etching characteristics uniform by making the etching characteristics variable. An embodiment of the present invention will be described below with reference to the drawings. [Embodiment of the Invention] FIGS. 3 and 4 are a longitudinal sectional view and a plan sectional view of a plasma etching apparatus showing an embodiment of the invention. In these figures, 1 to B are Fig. 1.
第２図において説明したものと同一であり、９は前記内
部電極３ケ囲むように配置したガス導入リングである。This is the same as that explained in FIG. 2, and 9 is a gas introduction ring arranged so as to surround the three internal electrodes.
このガス導入リング８は、チャンバー１の外部より真空
シール部を介して上下（軸方 −向）Ｋ可動できるリン
グ状に形成されており、かつ、図示のように多数のガス
噴出穴９ａＹ有している。このガス導入リング９の近傍
のガス密度は高く、プラズマ状態でのプラズマ密度１岨
成が他の領域と異なっている。したがって、このガス導
入リング９の位置を可変することにより、内部電極３・
チャンバー１内のプラズマ密度を任意に変えることが可
能となる。The gas introduction ring 8 is formed into a ring shape that can be moved up and down (in the axial direction) from the outside of the chamber 1 through a vacuum seal, and has a large number of gas ejection holes 9aY as shown in the figure. ing. The gas density near the gas introduction ring 9 is high, and the plasma density in the plasma state is different from other regions. Therefore, by varying the position of this gas introduction ring 9, the internal electrodes 3 and
It becomes possible to arbitrarily change the plasma density within the chamber 1.
この発明の実施例では、あらかじめガス導入リング９を
用いない場合のエツチング速度の分布を測定しておき、
第５図のようなベースプレート４からの距離が高い位置
、−丁なわら、上部の方がエツチング速度の分布が高＜
、゛下部の方が低い分布であることを確認しており、ガ
ス導入リング９を用いる場合のリング近傍のエツチング
レートは、他の領域より５割程度高いことも実験的に確
認しているので、下部に集中するようにエツチング時間
中、上部領域から下部領域への移動速度を上部で速（、
下部で遅いようＫ、ガス導入リング９を移動させること
により第６図のよ゛うに軸方向エツチング量の均一化を
図ることができる。こｔ’ＬＫよれば平均エツチング速
度は上部では減少し、下部では増加することになる。In the embodiment of the present invention, the etching rate distribution when the gas introduction ring 9 is not used is measured in advance.
As shown in Fig. 5, the etching rate distribution is higher at the higher position from the base plate 4.
We have confirmed that the distribution is lower at the bottom, and have also experimentally confirmed that when using the gas introduction ring 9, the etching rate near the ring is approximately 50% higher than in other areas. , during the etching time, the movement speed from the upper region to the lower region is increased at the upper region so as to concentrate on the lower region (,
By moving the gas introduction ring 9 slowly in the lower part, it is possible to make the amount of axial etching uniform as shown in FIG. According to t'LK, the average etching rate decreases at the top and increases at the bottom.
また、この発明の他の実施例においては、ガス導入リン
グ９を下部のエツチング速度の低い速度に固定し、その
近傍のエツチング速度を増大させることｋよって均一化
を図った結果、これも同様の効果をもたらした。In another embodiment of the present invention, the gas introduction ring 9 is fixed at a lower etching rate than the lower part, and the etching rate in the vicinity is increased to achieve uniformity. It brought about an effect.
以上説明したよ５Ｋ、この発明は、内部電極を同軸状に
取り囲み、円周上に多数のガス噴出穴が形成さｔｔ ７
．：ガス導入リングを前記内部電極の軸方向忙移動・自
在に設けたので、柱状の内部電極の軸方向のプラズマ密
度の分布を均一化することができるので、チャンバー内
のエツチングの均一化を図ることができ、内部電極に保
持さｒｔた多数の試料のエツチングを均一に行うことが
できる効果がある。As explained above, in this invention, an internal electrode is coaxially surrounded and a large number of gas ejection holes are formed on the circumference.
．． : Since the gas introduction ring is freely movable in the axial direction of the internal electrode, the distribution of plasma density in the axial direction of the columnar internal electrode can be made uniform, so that uniform etching within the chamber can be achieved. This has the effect of uniformly etching a large number of samples held on the internal electrodes.
第１図は従来のプラズマエツチング装置を示す断面図、
第２図は第１図の横断面図、第３図はこの発明の一実施
例を示すプラズマエツチング装置の断面図、第４図は第
３図の横断面図、第５図は従来装置によるエツチング速
度の分布を示すエツチング特性図、第６図は第３図の装
置によるエツチング速度の分布を示すエツチング特性図
である。
図中、１はチャンバー、２は真空排気口、３は内部電極
、４はペースプレート、５は試料、６は０リング、７は
ガス導入パイプ、８は高周波電源、９はガス導入リング
、９ａはガス噴出穴である。
なお、図中の同一符号は同一または相尚部分を示すｂ
代理人 大岩増雄 （外２名）
第１図
第２図
第３図
第４図
手続補正書（自発）
１．事件の表示 特願昭５８〜２２２６４４号２、発明
の名称 プラズマエツチング装詔３６補正をする者
事件との関係 特許出願人
住 所 東京都千代田区丸の内二丁目２番３号名 称
（６０１）三菱電機株式会社
代表者片山仁八部
４、代理人
住 所 東京都千代田区丸の内二丁目２番３号５、補正
の対象
明細書の発明の詳細な説明の欄
６、補正の内容
（１）明細書第２頁１行の「第１図に」を、「第１図、
第２図に」と補正する。
（２）同じく第２頁５行の「電ａｉ３．チャンバー１」
を、「電極３とチャンバー１」と補正する。
以上FIG. 1 is a sectional view showing a conventional plasma etching apparatus.
FIG. 2 is a cross-sectional view of FIG. 1, FIG. 3 is a cross-sectional view of a plasma etching apparatus showing an embodiment of the present invention, FIG. 4 is a cross-sectional view of FIG. 3, and FIG. 5 is a conventional apparatus. FIG. 6 is an etching characteristic diagram showing the distribution of etching rates by the apparatus of FIG. 3. FIG. In the figure, 1 is a chamber, 2 is a vacuum exhaust port, 3 is an internal electrode, 4 is a pace plate, 5 is a sample, 6 is an 0 ring, 7 is a gas introduction pipe, 8 is a high frequency power supply, 9 is a gas introduction ring, 9a is a gas outlet. In addition, the same reference numerals in the figures indicate the same or similar parts.b Agent: Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 3 Figure 4 Procedural amendment (voluntary) 1. Indication of the case: Japanese Patent Application No. 58-222,644 2, title of the invention: Relationship with the plasma etching device amendment 36 case Patent applicant address: 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name:
(601) Mitsubishi Electric Co., Ltd. Representative: Hitoshi Katayama 4, Agent address: 2-2-3-5 Marunouchi, Chiyoda-ku, Tokyo, Detailed description of the invention column 6 of the specification to be amended, Contents of the amendment (1) “In Figure 1” on page 2, line 1 of the specification is replaced with “In Figure 1,
In Figure 2. (2) Also on page 2, line 5, “Electric ai3. Chamber 1”
is corrected to "electrode 3 and chamber 1". that's all
Claims (1)
で密對し、前記チャヅバー内を所要の圧力に真空排気す
るとともに、エツチングガスを導入し、前記内部電極と
外側電極との間でプラズマ□ 放電を発生させ、前記内
部電極に保持さｔ′Ｉに複数において、前記内部電極を
同軸状に取り囲み円周上に多数のガス噴出穴が形成され
にガス導入リングを前記内部電極の軸方向忙移動自在に
設けたことを特徴とするプラズマエツチング装置。The inner electrode that holds the sample is tightly sealed with an outer electrode that also serves as a chamber cage, and the inside of the chamber is evacuated to the required pressure, and an etching gas is introduced to generate a plasma discharge between the inner electrode and the outer electrode. A gas introduction ring is moved in the axial direction of the internal electrode so that a large number of gas ejection holes are formed on the circumference coaxially surrounding the internal electrode at a plurality of points t'I held by the internal electrode. A plasma etching device characterized by being freely installed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22264483A JPS60126833A (en) | 1983-11-24 | 1983-11-24 | Plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22264483A JPS60126833A (en) | 1983-11-24 | 1983-11-24 | Plasma etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60126833A true JPS60126833A (en) | 1985-07-06 |
| JPH0354457B2 JPH0354457B2 (en) | 1991-08-20 |
Family
ID=16785678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22264483A Granted JPS60126833A (en) | 1983-11-24 | 1983-11-24 | Plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60126833A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62241336A (en) * | 1986-04-11 | 1987-10-22 | Nec Kyushu Ltd | Plasma etching device |
| JPH0319318A (en) * | 1989-06-16 | 1991-01-28 | Tokyo Erekutoron Kyushu Kk | Processing device for material to be processed |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127761A (en) * | 1976-04-19 | 1977-10-26 | Fujitsu Ltd | Gas plasma etching unit |
| JPS5358761A (en) * | 1976-11-08 | 1978-05-26 | Sony Corp | Vapor phase growth apparatus |
-
1983
- 1983-11-24 JP JP22264483A patent/JPS60126833A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52127761A (en) * | 1976-04-19 | 1977-10-26 | Fujitsu Ltd | Gas plasma etching unit |
| JPS5358761A (en) * | 1976-11-08 | 1978-05-26 | Sony Corp | Vapor phase growth apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62241336A (en) * | 1986-04-11 | 1987-10-22 | Nec Kyushu Ltd | Plasma etching device |
| JPH0319318A (en) * | 1989-06-16 | 1991-01-28 | Tokyo Erekutoron Kyushu Kk | Processing device for material to be processed |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0354457B2 (en) | 1991-08-20 |
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