JPS61174388A - Etching device - Google Patents
Etching deviceInfo
- Publication number
- JPS61174388A JPS61174388A JP1419985A JP1419985A JPS61174388A JP S61174388 A JPS61174388 A JP S61174388A JP 1419985 A JP1419985 A JP 1419985A JP 1419985 A JP1419985 A JP 1419985A JP S61174388 A JPS61174388 A JP S61174388A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- upper electrode
- ports
- etching
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は半導体製造工程において半導体ウェハをエツチ
ングするドライエツチング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a dry etching apparatus for etching a semiconductor wafer in a semiconductor manufacturing process.
半導体ウェーハの製造工程において、エツチングの均一
性は製品歩留りを向上させるために極めて重要な因子で
ある。エツチングの均一性に影響を与える因子としては
、プロセスガスの流れがある。In the manufacturing process of semiconductor wafers, etching uniformity is an extremely important factor for improving product yield. A factor that affects the uniformity of etching is the flow of process gas.
従来のエツチング装置は、［電子材料Ｊ（１９８３年３
月号、工業調査会発行）の「最近の超Ｌ８Ｉ技術と製造
装置」と題する特集記事の第３頁に記載されているよう
に、上部電極（カソード）に設けた多数のガス導入口よ
りガスを導入してシャワー化し、下部電極（対向アノー
ド）のウェーハ外周部に設けた多数の排気口より排気さ
れる。The conventional etching device is [Electronic Materials J (March 1983)
As described on page 3 of the special feature article titled "Recent Ultra-L8I Technology and Manufacturing Equipment" in the Monthly issue (published by Kogyo Research Association), gas is is introduced to form a shower, and is exhausted from a number of exhaust ports provided on the outer periphery of the wafer of the lower electrode (opposing anode).
しかしながら、この構造は、排気口がウェーハ外周部に
設けられているので、ウェーハ中心部とウェーハ外周部
とでガスの流れが不均一になり、ウェーハ内でエツチン
グの変動、つまりバラツキが発生するという問題点があ
った。However, with this structure, the exhaust port is provided at the outer periphery of the wafer, so the gas flow becomes uneven between the center of the wafer and the outer periphery of the wafer, resulting in variations in etching within the wafer. There was a problem.
本発明の目的は、エツチングの変動をなくし、パターン
の高精度化及び歩留り向上を図り得るエツチング装置を
提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an etching apparatus that can eliminate etching fluctuations, improve pattern precision, and improve yield.
本発明は上記目的を達成するために、チャンバ内に一対
の上部電極と下部電極とを対向配置させ、前記上部電極
に多数のガス導入口を設けたエツチング装置において、
前記上部電極のガス導入口の間に多数のガス排気口を設
け、ウェーハ内外周部におけるガス導入だけでなく、ガ
ス排気も制御できるようにし、ウェーハ上のエツチング
速度ヲ均−化させたことを特徴さする。In order to achieve the above object, the present invention provides an etching apparatus in which a pair of upper and lower electrodes are disposed facing each other in a chamber, and the upper electrode is provided with a large number of gas inlets.
A large number of gas exhaust ports are provided between the gas inlet ports of the upper electrode, so that not only the gas introduction at the inner and outer periphery of the wafer, but also the gas exhaust can be controlled, thereby making it possible to equalize the etching speed on the wafer. Characteristics.
以下、本発明の一実施例を第１図１こより説明する、所
定値の真空度ｌこ保持されるチャンバ１内ζこは上部電
極２及び下部電極３が対向配置されている。ウェーハ４
は下部電極３上に搬送され、ガス導入、排気によりチャ
ンバｌ内が一定の雰囲気に保持された状態で、上部電極
２または下部電極３に印加される高周波電圧力によりプ
ラズマ化したガスによりエツチングされる。An embodiment of the present invention will be described below with reference to FIG. 1. Inside a chamber 1 maintained at a predetermined degree of vacuum, an upper electrode 2 and a lower electrode 3 are disposed facing each other. wafer 4
is transferred onto the lower electrode 3, and while the inside of the chamber 1 is maintained at a constant atmosphere by gas introduction and exhaust, it is etched by the gas turned into plasma by the high-frequency voltage applied to the upper electrode 2 or the lower electrode 3. Ru.
前記上部電極２にはガス排気口２ａ及びガス導入口２ｂ
がそれぞれ多数設けられ、前記下部電極３にはガス排気
口３ａが多数設けられている。そこで、チャンバ１内は
前記ガス排気口２ａ、３ａにより、前記ガス排気口２ａ
、３ａがそれぞれコンダクタンス可変バルブ５．６によ
り排気量が制御されて排気される。またプロセスガスは
複数のガス導入管７から導入され、それぞれマスフロー
コントローラ８により流量制御され、前記ガス導入口２
ｂからチャンバ１内に導入される。The upper electrode 2 has a gas exhaust port 2a and a gas inlet port 2b.
are provided in large numbers, and the lower electrode 3 is provided with a large number of gas exhaust ports 3a. Therefore, the inside of the chamber 1 is controlled by the gas exhaust ports 2a and 3a.
, 3a are each evacuated with the displacement amount controlled by a variable conductance valve 5.6. Further, the process gas is introduced from a plurality of gas introduction pipes 7, and its flow rate is controlled by a mass flow controller 8, respectively, and the gas introduction port 2
It is introduced into the chamber 1 from b.
第２図は前記上部電極２１こ設けたガス排気口２ａ及び
ガス導入口２ｂの配置を示す。ここで、ガス排気口２ａ
は黒丸、ガス導入口２ｂは白丸で示した。同図１ａ）は
ガス排気口２ａとガス導入口２ｂをランダムに配置して
なる。同図＋ｂｌは同心円状にガス排気口２ａとガス導
入口２ｂを交互に配置してなる。同図（Ｃ）は角度で分
割してガス排気口２ａとガス導入口２ｂを配置してなる
。同図（ｄ）はスライス状に分割してガス排気口２ａと
ガス導入口２ｂを配置してなる。FIG. 2 shows the arrangement of the gas exhaust port 2a and gas inlet port 2b provided with the upper electrode 21. Here, the gas exhaust port 2a
is shown by a black circle, and the gas inlet 2b is shown by a white circle. In FIG. 1a), gas exhaust ports 2a and gas inlet ports 2b are randomly arranged. +bl in the figure is formed by alternately arranging gas exhaust ports 2a and gas inlet ports 2b concentrically. In the same figure (C), the gas exhaust port 2a and the gas inlet port 2b are arranged by being divided at an angle. In the figure (d), the gas exhaust port 2a and the gas inlet port 2b are arranged by dividing into slices.
このように、上部電極２のガス導入口２ｂの間ζこ多数
のガス排気口２ａを設け、ウェーハ４の内外周部のガス
流入量とガス排気量をそれぞれ制御することができるの
で、ガス排気口３ａの影響を受けずにウェーハ４内のエ
ツチング対象膜一１こ、かつ容易に制御することができ
る。In this way, a large number of gas exhaust ports 2a are provided between the gas inlet ports 2b of the upper electrode 2, and the gas inflow and gas exhaust amounts of the inner and outer peripheral portions of the wafer 4 can be controlled respectively. The film to be etched within the wafer 4 can be easily controlled without being affected by the opening 3a.
以上の説明から明らかなように、本発明によれば、ウェ
ーハ内外周部におけるガス流量とガス排気量をそれぞれ
制御することができるので、つ工−ハ内外周部のエツチ
ング速度を一定に保持することができる。従って、エツ
チング対象膜の違いによるエツチング状態の差異にも容
易に対処でき、エツチングの均一化が図れ、パターンの
高精度化及び歩留りが向上する。As is clear from the above description, according to the present invention, the gas flow rate and gas exhaust amount at the inner and outer peripheries of the wafer can be controlled respectively, so that the etching speed at the inner and outer peripheries of the wafer can be maintained constant. be able to. Therefore, differences in etching conditions due to differences in the film to be etched can be easily dealt with, uniform etching can be achieved, and pattern precision and yield can be improved.
第１図は本発明になるエツチング装置の一実施例を示す
断面図、第２図１８１１ｂ）（Ｃ）（ｄ）は上部電極の
ガス排気口とガス°導入口の配置図である。
１・・・チャンバ、 ２・・・上部電極、２ａ
・・・ガス排気口、 ２ｂ・・・ガス導入口、３・
・・下部電極。
−、
第 ２ 図FIG. 1 is a sectional view showing an embodiment of the etching apparatus according to the present invention, and FIGS. 2(a) and 2(b) (c) and (d) are layout diagrams of the gas exhaust port and gas inlet port of the upper electrode. 1... Chamber, 2... Upper electrode, 2a
...Gas exhaust port, 2b...Gas inlet port, 3.
...Lower electrode. -, Figure 2
Claims (1)
させ、前記上部電極に多数のガス導入口を設けたエッチ
ング装置において、前記上部電極のガス導入口の間に排
気量を制御できる多数のガス排気口を設けたことを特徴
とするエッチング装置。In an etching apparatus in which a pair of upper and lower electrodes are arranged facing each other in a chamber, and the upper electrode is provided with a large number of gas inlets, a large number of gases whose exhaust amount can be controlled are provided between the gas inlets of the upper electrode. An etching device characterized by having an exhaust port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1419985A JPS61174388A (en) | 1985-01-30 | 1985-01-30 | Etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1419985A JPS61174388A (en) | 1985-01-30 | 1985-01-30 | Etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61174388A true JPS61174388A (en) | 1986-08-06 |
Family
ID=11854441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1419985A Pending JPS61174388A (en) | 1985-01-30 | 1985-01-30 | Etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61174388A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63157422A (en) * | 1986-12-22 | 1988-06-30 | Tokyo Electron Ltd | Ashing method |
| JPH01238019A (en) * | 1988-03-18 | 1989-09-22 | Hitachi Ltd | Method and device for plasma processing |
| JP2007525021A (en) * | 2003-11-19 | 2007-08-30 | アプライド マテリアルズ インコーポレイテッド | Gas distribution shower head featuring exhaust aperture |
| JP2009224441A (en) * | 2008-03-14 | 2009-10-01 | Tokyo Electron Ltd | Showerhead and substrate processing apparatus |
| JP2009260258A (en) * | 2008-03-19 | 2009-11-05 | Tokyo Electron Ltd | Shower head and substrate processing apparatus |
| JP2010028133A (en) * | 2009-10-27 | 2010-02-04 | Oki Semiconductor Co Ltd | Heat treatment apparatus of workpiece, and evacuation method thereof |
| JP2010034574A (en) * | 2009-10-27 | 2010-02-12 | Oki Semiconductor Co Ltd | Heat treatment device of treatment object and method of exhausting air for the same |
| JP2010532581A (en) * | 2007-06-29 | 2010-10-07 | ラム リサーチ コーポレーション | Integrated steerability array placement to minimize non-uniformity |
-
1985
- 1985-01-30 JP JP1419985A patent/JPS61174388A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63157422A (en) * | 1986-12-22 | 1988-06-30 | Tokyo Electron Ltd | Ashing method |
| JPH01238019A (en) * | 1988-03-18 | 1989-09-22 | Hitachi Ltd | Method and device for plasma processing |
| JP2007525021A (en) * | 2003-11-19 | 2007-08-30 | アプライド マテリアルズ インコーポレイテッド | Gas distribution shower head featuring exhaust aperture |
| JP2010532581A (en) * | 2007-06-29 | 2010-10-07 | ラム リサーチ コーポレーション | Integrated steerability array placement to minimize non-uniformity |
| JP2009224441A (en) * | 2008-03-14 | 2009-10-01 | Tokyo Electron Ltd | Showerhead and substrate processing apparatus |
| JP2009260258A (en) * | 2008-03-19 | 2009-11-05 | Tokyo Electron Ltd | Shower head and substrate processing apparatus |
| US8366828B2 (en) | 2008-03-19 | 2013-02-05 | Tokyo Electron Limited | Shower head and substrate processing apparatus |
| JP2010028133A (en) * | 2009-10-27 | 2010-02-04 | Oki Semiconductor Co Ltd | Heat treatment apparatus of workpiece, and evacuation method thereof |
| JP2010034574A (en) * | 2009-10-27 | 2010-02-12 | Oki Semiconductor Co Ltd | Heat treatment device of treatment object and method of exhausting air for the same |
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