JPS60125747U - capacitor - Google Patents
capacitorInfo
- Publication number
- JPS60125747U JPS60125747U JP1340784U JP1340784U JPS60125747U JP S60125747 U JPS60125747 U JP S60125747U JP 1340784 U JP1340784 U JP 1340784U JP 1340784 U JP1340784 U JP 1340784U JP S60125747 U JPS60125747 U JP S60125747U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- capacitor
- diffusion region
- region
- biased
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来のコンデンサを説明する断面図、第2図は
本考案のコンデンサを説明する断面図である。
主な図番の説明、11は半導体基板、12はエピタキシ
ャル層、14は島領域、16は第1拡散領域、17は第
2拡散領域、22は電極層である。FIG. 1 is a sectional view illustrating a conventional capacitor, and FIG. 2 is a sectional view illustrating a capacitor according to the present invention. Explanation of main figure numbers: 11 is a semiconductor substrate, 12 is an epitaxial layer, 14 is an island region, 16 is a first diffusion region, 17 is a second diffusion region, and 22 is an electrode layer.
Claims (1)
ピタキシャル層と該エピタキシャル層をPN分離して設
けた島領域と該島領域表面に形成した一導電型の第1拡
散領域と該第1拡散領域表面に形成された逆導電型の第
2拡散領域とを備え前記第1および第2拡散領域とで形
成されるPN接合を逆バイアスして成るコンデンサに於
いて、前記PN接合上の絶縁膜に低電位あるいは接地電
位にバイアスされた電極層を設けることを特徴とするコ
ンデンサ。A semiconductor substrate of one conductivity type, an epitaxial layer of the opposite conductivity type provided on the substrate, an island region provided by separating the epitaxial layer in PN, a first diffusion region of one conductivity type formed on the surface of the island region, a second diffusion region of opposite conductivity type formed on a surface of the first diffusion region, and a PN junction formed by the first and second diffusion regions is reverse-biased. A capacitor characterized in that an electrode layer biased to a low potential or a ground potential is provided on an insulating film of the capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1340784U JPS60125747U (en) | 1984-02-01 | 1984-02-01 | capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1340784U JPS60125747U (en) | 1984-02-01 | 1984-02-01 | capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60125747U true JPS60125747U (en) | 1985-08-24 |
Family
ID=30497385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1340784U Pending JPS60125747U (en) | 1984-02-01 | 1984-02-01 | capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60125747U (en) |
-
1984
- 1984-02-01 JP JP1340784U patent/JPS60125747U/en active Pending
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