JPS60125747U - capacitor - Google Patents

capacitor

Info

Publication number
JPS60125747U
JPS60125747U JP1340784U JP1340784U JPS60125747U JP S60125747 U JPS60125747 U JP S60125747U JP 1340784 U JP1340784 U JP 1340784U JP 1340784 U JP1340784 U JP 1340784U JP S60125747 U JPS60125747 U JP S60125747U
Authority
JP
Japan
Prior art keywords
conductivity type
capacitor
diffusion region
region
biased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1340784U
Other languages
Japanese (ja)
Inventor
正明 池田
二一 渥美
哲郎 浅野
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP1340784U priority Critical patent/JPS60125747U/en
Publication of JPS60125747U publication Critical patent/JPS60125747U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のコンデンサを説明する断面図、第2図は
本考案のコンデンサを説明する断面図である。 主な図番の説明、11は半導体基板、12はエピタキシ
ャル層、14は島領域、16は第1拡散領域、17は第
2拡散領域、22は電極層である。
FIG. 1 is a sectional view illustrating a conventional capacitor, and FIG. 2 is a sectional view illustrating a capacitor according to the present invention. Explanation of main figure numbers: 11 is a semiconductor substrate, 12 is an epitaxial layer, 14 is an island region, 16 is a first diffusion region, 17 is a second diffusion region, and 22 is an electrode layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一導電型の半導体基板と該基板上に設けた逆導電型のエ
ピタキシャル層と該エピタキシャル層をPN分離して設
けた島領域と該島領域表面に形成した一導電型の第1拡
散領域と該第1拡散領域表面に形成された逆導電型の第
2拡散領域とを備え前記第1および第2拡散領域とで形
成されるPN接合を逆バイアスして成るコンデンサに於
いて、前記PN接合上の絶縁膜に低電位あるいは接地電
位にバイアスされた電極層を設けることを特徴とするコ
ンデンサ。
A semiconductor substrate of one conductivity type, an epitaxial layer of the opposite conductivity type provided on the substrate, an island region provided by separating the epitaxial layer in PN, a first diffusion region of one conductivity type formed on the surface of the island region, a second diffusion region of opposite conductivity type formed on a surface of the first diffusion region, and a PN junction formed by the first and second diffusion regions is reverse-biased. A capacitor characterized in that an electrode layer biased to a low potential or a ground potential is provided on an insulating film of the capacitor.
JP1340784U 1984-02-01 1984-02-01 capacitor Pending JPS60125747U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1340784U JPS60125747U (en) 1984-02-01 1984-02-01 capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1340784U JPS60125747U (en) 1984-02-01 1984-02-01 capacitor

Publications (1)

Publication Number Publication Date
JPS60125747U true JPS60125747U (en) 1985-08-24

Family

ID=30497385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1340784U Pending JPS60125747U (en) 1984-02-01 1984-02-01 capacitor

Country Status (1)

Country Link
JP (1) JPS60125747U (en)

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