JPS60137451U - semiconductor resistance device - Google Patents
semiconductor resistance deviceInfo
- Publication number
- JPS60137451U JPS60137451U JP2543384U JP2543384U JPS60137451U JP S60137451 U JPS60137451 U JP S60137451U JP 2543384 U JP2543384 U JP 2543384U JP 2543384 U JP2543384 U JP 2543384U JP S60137451 U JPS60137451 U JP S60137451U
- Authority
- JP
- Japan
- Prior art keywords
- type
- resistance device
- resistance
- semiconductor
- semiconductor resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案の一実施例を示す断面図、第２図は従来
装置を示す断面図である。
１．２１・・・半導体基板、２．２２・・・エピタキシ
ャル層、３，２３・・・分離領域、４，２４・・・島領
域、６，２６・・・拡散領域、７． ８． ２７・・・
抵抗領域、９． １０． ２８．２９・・・電極、１１
・・・接続電極。FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional device. 1.21... Semiconductor substrate, 2.22... Epitaxial layer, 3, 23... Isolation region, 4, 24... Island region, 6, 26... Diffusion region, 7. 8. 27...
Resistance region, 9. 10. 28.29... Electrode, 11
...Connection electrode.
Claims (2)
設け、このエピタキシャル層を分離領域にて分離して形
成した島領域内に、Ｐ型の拡散領域を形成し、この拡散
領域内に２個のＮ型の抵抗領域を形成し、且つこの抵抗
領域間を接続電極で直列に接続すると共に、前記接続電
極を前記拡散領域に接触せしめたことを特徴とする半導
体抵抗装置。(1) An N-type epitaxial layer is provided on a P-type semiconductor substrate, and a P-type diffusion region is formed in an island region formed by separating this epitaxial layer with an isolation region. A semiconductor resistance device characterized in that two N-type resistance regions are formed, the resistance regions are connected in series by a connection electrode, and the connection electrode is brought into contact with the diffusion region.
徴とする実用新案登録請求の範囲第１項に記載の半導体
抵抗装置。(2) The semiconductor resistance device according to claim 1, wherein the two resistance regions are formed to have the same resistance value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2543384U JPS60137451U (en) | 1984-02-23 | 1984-02-23 | semiconductor resistance device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2543384U JPS60137451U (en) | 1984-02-23 | 1984-02-23 | semiconductor resistance device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60137451U true JPS60137451U (en) | 1985-09-11 |
Family
ID=30520495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2543384U Pending JPS60137451U (en) | 1984-02-23 | 1984-02-23 | semiconductor resistance device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137451U (en) |
-
1984
- 1984-02-23 JP JP2543384U patent/JPS60137451U/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS60137451U (en) | semiconductor resistance device | |
| JPS60137450U (en) | semiconductor resistance device | |
| JPS58106954U (en) | diode | |
| JPS60144255U (en) | transistor | |
| JPS58106953U (en) | transistor | |
| JPS60153550U (en) | Lateral transistor | |
| JPS60125749U (en) | semiconductor switching device | |
| JPS64348U (en) | ||
| JPS5860951U (en) | semiconductor equipment | |
| JPS6078147U (en) | capacitor | |
| JPS6113955U (en) | Zener diode incorporated into integrated circuit | |
| JPS60160558U (en) | substrate type transistor | |
| JPS60125747U (en) | capacitor | |
| JPS60153548U (en) | Lateral transistor | |
| JPS6113956U (en) | Zener diode incorporated into integrated circuit | |
| JPS60125751U (en) | semiconductor switching device | |
| JPS59131156U (en) | semiconductor integrated circuit | |
| JPS60151154U (en) | transistor | |
| JPS58164251U (en) | semiconductor temperature sensing element | |
| JPS60166155U (en) | Junction type capacitor | |
| JPS58124953U (en) | Semiconductor integrated circuit device | |
| JPS60149150U (en) | semiconductor equipment | |
| JPS5887363U (en) | semiconductor equipment | |
| JPS61162065U (en) | ||
| JPS60151152U (en) | Lateral transistor |