JPS60137450U - semiconductor resistance device - Google Patents

semiconductor resistance device

Info

Publication number
JPS60137450U
JPS60137450U JP2543284U JP2543284U JPS60137450U JP S60137450 U JPS60137450 U JP S60137450U JP 2543284 U JP2543284 U JP 2543284U JP 2543284 U JP2543284 U JP 2543284U JP S60137450 U JPS60137450 U JP S60137450U
Authority
JP
Japan
Prior art keywords
resistance
region
type
resistance device
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2543284U
Other languages
Japanese (ja)
Inventor
野村　佳伸
正明 池田
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP2543284U priority Critical patent/JPS60137450U/en
Publication of JPS60137450U publication Critical patent/JPS60137450U/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案の一実施例を示す断面図、第２図は従来
例を示す断面図である。 １．２１・・・半導体基板、２．２２・・・エピタキシ
ャル層、３，２３・・・分離領域、４，２４・・・島領
域、５．６．２６・・・拡散領域、７．８．２７・・・
抵抗領域、９，１０，１１，１２，２８，２９・・・電
極。FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional example. 1.21... Semiconductor substrate, 2.22... Epitaxial layer, 3, 23... Isolation region, 4, 24... Island region, 5.6.26... Diffusion region, 7.8 .27...
Resistance region, 9, 10, 11, 12, 28, 29... electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] Ｐ型の半導体基板と、この基板上に設けられたＮ型のエ
ピタキシャル層と、このエピタキシャル層を分離領域で
分離した島領域と、この島領域に形成された少なくとも
２個のＰ型拡散領域と、この拡散領域内に夫々形成され
たＮ型の抵抗領域と、この抵抗領域の夫々の両端に接触
する電極とを備え、前記抵抗領域の一方の電極を延在し
て対応する拡散領域と接触させると共に、前記抵抗領域
間を直列に接続したことを特徴とする半導体抵抗装置。A P-type semiconductor substrate, an N-type epitaxial layer provided on this substrate, an island region separated from this epitaxial layer by a separation region, and at least two P-type diffusion regions formed in this island region. , comprising N-type resistance regions formed in the respective diffusion regions and electrodes in contact with both ends of each of the resistance regions, and one electrode of the resistance region is extended to contact the corresponding diffusion region. A semiconductor resistance device characterized in that the resistance regions are connected in series.
JP2543284U 1984-02-23 1984-02-23 semiconductor resistance device Pending JPS60137450U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2543284U JPS60137450U (en) 1984-02-23 1984-02-23 semiconductor resistance device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2543284U JPS60137450U (en) 1984-02-23 1984-02-23 semiconductor resistance device

Publications (1)

Publication Number Publication Date
JPS60137450U true JPS60137450U (en) 1985-09-11

Family

ID=30520493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2543284U Pending JPS60137450U (en) 1984-02-23 1984-02-23 semiconductor resistance device

Country Status (1)

Country Link
JP (1) JPS60137450U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134904A (en) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp Semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633157U (en) * 1979-08-20 1981-04-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633157U (en) * 1979-08-20 1981-04-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02134904A (en) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp Semiconductor integrated circuit device

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