JPS6411557U - - Google Patents

Info

Publication number
JPS6411557U
JPS6411557U JP10478387U JP10478387U JPS6411557U JP S6411557 U JPS6411557 U JP S6411557U JP 10478387 U JP10478387 U JP 10478387U JP 10478387 U JP10478387 U JP 10478387U JP S6411557 U JPS6411557 U JP S6411557U
Authority
JP
Japan
Prior art keywords
light
substrate
receiving
receiving device
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10478387U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10478387U priority Critical patent/JPS6411557U/ja
Publication of JPS6411557U publication Critical patent/JPS6411557U/ja
Pending legal-status Critical Current

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  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図ａ，ｂはそれぞれ本考案の一実施例を示
す平面図及び断面図、第２図は第１図の等価回路
図、第３図は本考案の他の実施例を示す平面図、
第４図は本考案のさらに他の実施例を示す平面図
、第５図は本考案の応用例を示す平面図、第６図
は従来例を示す断面図、第７図は他の従来例を示
す断面図である。 １１…Ｐ型基板、１２…Ｎ型エピタキシヤル層
、１３…Ｐ拡散層。 1A and 1B are a plan view and a sectional view showing one embodiment of the present invention, FIG. 2 is an equivalent circuit diagram of FIG. 1, and FIG. 3 is a plan view showing another embodiment of the present invention,
FIG. 4 is a plan view showing still another embodiment of the present invention, FIG. 5 is a plan view showing an application example of the present invention, FIG. 6 is a sectional view showing a conventional example, and FIG. 7 is another conventional example. FIG. 11...P type substrate, 12...N type epitaxial layer, 13...P diffusion layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板にＰＮ接合を形成し、この基板の一
主表面を受光面とする半導体受光装置において、
前記受光面に、前記基板の他方の主面と同じ導電
型のシールド用拡散層を形成したことを特徴とす
る半導体受光装置。 In a semiconductor light-receiving device in which a PN junction is formed on a semiconductor substrate and one main surface of this substrate is used as a light-receiving surface,
A semiconductor light-receiving device characterized in that a shielding diffusion layer of the same conductivity type as the other main surface of the substrate is formed on the light-receiving surface.
JP10478387U 1987-07-08 1987-07-08 Pending JPS6411557U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10478387U JPS6411557U (en) 1987-07-08 1987-07-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10478387U JPS6411557U (en) 1987-07-08 1987-07-08

Publications (1)

Publication Number Publication Date
JPS6411557U true JPS6411557U (en) 1989-01-20

Family

ID=31336806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10478387U Pending JPS6411557U (en) 1987-07-08 1987-07-08

Country Status (1)

Country Link
JP (1) JPS6411557U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159180A (en) * 1989-11-16 1991-07-09 Matsushita Electric Ind Co Ltd Optical semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159180A (en) * 1989-11-16 1991-07-09 Matsushita Electric Ind Co Ltd Optical semiconductor device

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