JPS60112699A - Manufacture of diamond - Google Patents
Manufacture of diamondInfo
- Publication number
- JPS60112699A JPS60112699A JP58220956A JP22095683A JPS60112699A JP S60112699 A JPS60112699 A JP S60112699A JP 58220956 A JP58220956 A JP 58220956A JP 22095683 A JP22095683 A JP 22095683A JP S60112699 A JPS60112699 A JP S60112699A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diamond
- gas
- radiating material
- gas flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Abstract
Description
【発明の詳細な説明】
本発明は、化学気相析出法を用い、基板上にダイヤモン
ドを析出させる製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a manufacturing method for depositing diamond on a substrate using a chemical vapor deposition method.
炭化水素ないしは炭素化合物の気体の熱分解によってダ
イヤモンドを合成する方法として、従来、数種の方法が
知られている。例えば、特開昭４７−４２２８６に記載
の方法は、ダイヤモンド種結晶を白金又はパラジウム等
からなる線１．ｔをコーン状に巻いた中に置き、この触
媒ヒーターを加熱するとともに、反応系を抵抗加熱、高
周波加熱、炉内加熱等で、１１００〜１７００℃に保持
している。反応容器は、水平又は垂直反応容器を使用し
、水素ガスをキャリアガスとして炭化水素ガスを反応容
器に送シ込み、下記の反応を利用してダイヤモンド種結
晶の粒子径を増大させている。Several methods are conventionally known for synthesizing diamond by thermal decomposition of gaseous hydrocarbons or carbon compounds. For example, in the method described in Japanese Patent Application Laid-Open No. 47-42286, a diamond seed crystal is used as a wire made of platinum or palladium. The catalytic converter is placed in a cone-shaped tube, and the catalyst heater is heated, and the reaction system is maintained at 1,100 to 1,700° C. by resistance heating, high-frequency heating, furnace heating, or the like. A horizontal or vertical reaction vessel is used as the reaction vessel, and hydrocarbon gas is fed into the reaction vessel using hydrogen gas as a carrier gas, and the particle size of the diamond seed crystal is increased using the following reaction.
ＣｎＨ２ｎ＋ｚ→Ｃ（ダイヤモンド）十Ｈ，（但しｎ≦
５）−４＆ＶＣ、ダイヤモンドの気相合成では、ダイヤ
モンド以外の無定形炭素やクラファイトの析出が以後の
ダイヤモンドの生成を除土してしまうが、白金又はパラ
ジウム等の触媒ヒーターの作ＪＨｃよって、ダイヤモン
ド上に析出したノドダイヤモンド物質を下記の反応を利
用して除去できるととを述べている。CnH2n+z→C (diamond) 10H, (however, n≦
5)-4 & VC, in the vapor phase synthesis of diamond, the precipitation of amorphous carbon and graphite other than diamond removes the subsequent formation of diamond, but due to the production of a catalyst heater such as platinum or palladium, diamond It states that the diamond material deposited on the surface can be removed using the following reaction.
Ｃ（無定形炭素又はグラフアイ））＋２Ｈ，→ＣＨ。C (amorphous carbon or graphite)) +2H, →CH.
しかしながら、この方法ではダイヤモンドを成長させる
為に、ダイヤモンド種結晶を必要とする欠点がある。す
なわち、ダイヤモンド以外の物質からなる基板上にダイ
ヤモンドを析出させることができない欠点がある。また
コーン状に巻いた触媒ヒーター中に基板を置く為、触媒
効果および触媒ヒーターによる加熱効果は均一にはな９
得ず平坦な表面上に均一な膜状ダイヤモンドを得ること
は不可能である。However, this method has the drawback of requiring a diamond seed crystal to grow diamond. That is, there is a drawback that diamond cannot be deposited on a substrate made of a substance other than diamond. In addition, since the substrate is placed in a catalytic heater wrapped in a cone shape, the catalytic effect and the heating effect by the catalytic heater are not uniform.
It is impossible to obtain a uniform diamond film on a flat surface.
まだ別の方法、例えば１９８２年発行のジャパニーズ・
ジャーナル・オプ・アプライド・フィジクス誌（Ｊａｐ
ａｎｅｓｅ Ｊ’に＆ｎａｌ ｏｆ Ａｐｐｌｉｅｄ
Ｐｈｙｓｉｃｓ ）第２１巻第Ｌ１８３ページ記載の論
文には、第１図に示すような装置を用い、メタンガスと
水素ガスをボンベ３から供給し、混合ガス供給管６から
反応管７内に導入し、約２０００℃に加熱したタングス
テン、フィラメント５で接触加熱、熱分解させタングス
テン、フィラメント５直下に置いた基板１３上にダイヤ
モンドを析出させている。基板は反応炉１で加熱してい
る。タングステン・フィラメント５の構造は、コイル状
に−巻きしてお如、反応ガスの流れは、混合ガス供給管
６を上昇し、排気装置２により反応管７内で下方に向き
を変えるようになっている。この方法はダイヤモンド以
外の物質上にダイヤモンドを析出させることができる点
で優れた方法であるがタングステン・フィラメント５が
コイル状に巻かれており、しかも−巻きである為、基板
１３全体を均一に加熱できず、小面積に析出ししかも、
非ダイヤモンド物質が混在する不均一性を有している。There are still other methods, such as the Japanese book published in 1982.
Journal of Applied Physics (Jap
anese J'ni&nal of Applied
Physics) Vol. 21, page L183 uses an apparatus as shown in FIG. 1, supplies methane gas and hydrogen gas from cylinder 3, introduces them into reaction tube 7 from mixed gas supply pipe 6, Tungsten heated to about 2000° C. is heated in contact with the filament 5 and thermally decomposed to deposit diamond on a substrate 13 placed directly below the tungsten and filament 5. The substrate is heated in a reactor 1. The structure of the tungsten filament 5 is such that it is coiled, so that the flow of the reaction gas ascends the mixed gas supply pipe 6 and is directed downward in the reaction tube 7 by the exhaust device 2. ing. This method is an excellent method in that diamond can be deposited on materials other than diamond, but since the tungsten filament 5 is wound in a coil shape and is wound in a negative direction, the entire substrate 13 can be uniformly coated. It cannot be heated and precipitates in a small area.
It has non-uniformity with a mixture of non-diamond materials.
更に、ガスの流れが反応管７内で逆転する構造であシ、
ガス流は乱流゛となる。またガス流は、タングステン・
フィラメント５に接触後、基板１３に垂直に近い角度で
衝突する構造である為、基板１３厘上ア、基板１３中心
から端の方向へ反応ガスが流れる為、更にガス流速分布
の乱れが生ずる。この結果、予備加熱されたガスの温度
分布が不均一になったシ、ガス濃度分布が一様でなくな
り、非ダイヤモンド物質の混在を招き、ダイヤモンドの
成長も抑制される欠点を有している。Furthermore, the structure is such that the gas flow is reversed within the reaction tube 7,
The gas flow becomes turbulent. In addition, the gas flow is
After contacting the filament 5, the reactant gas collides with the substrate 13 at an almost perpendicular angle, so that the reaction gas flows over the substrate 13 and from the center of the substrate 13 to the ends, further causing disturbance in the gas flow velocity distribution. As a result, the temperature distribution of the preheated gas becomes non-uniform, the gas concentration distribution becomes non-uniform, non-diamond substances are mixed in, and the growth of diamond is also suppressed.
本発明は、前記欠点を改善することを目的とし、熱電子
放射材によって構成される加熱面と、反応ガス流と、該
加熱面直下に配置された基板面とを互いＫはぼ平行に配
置し、ガス流速分布および濃度分布を一様にすることに
よって、熱電子放射材による反応ガスの熱分解および励
起過程を基板付近で均一にするものである。The present invention aims to improve the above-mentioned drawbacks, and aims to arrange a heating surface made of a thermionic emitting material, a reactive gas flow, and a substrate surface disposed directly under the heating surface so that they are substantially parallel to each other. However, by making the gas flow velocity distribution and concentration distribution uniform, the thermal decomposition and excitation process of the reaction gas by the thermionic emitting material is made uniform in the vicinity of the substrate.
すなわち、ダイヤモンド成長の抑制因子である非ダイヤ
モンド炭素の混在を、基板付近でのガス流速分布および
ガス濃度分布を一様にすることによって除き、早い成長
速度で、均一なダイヤモンド膜を得る。That is, the presence of non-diamond carbon, which is a factor that inhibits diamond growth, is removed by making the gas flow velocity distribution and gas concentration distribution uniform in the vicinity of the substrate, thereby obtaining a uniform diamond film at a high growth rate.
以下、本発明の詳細な説明する。熱電子放射材の加熱に
よυ、発生する熱電子の作用、熱電子放射材による反応
ガスの接触分解等にょシ、水素ガスおよび炭化水素ガス
は原子状水素、炭化水素の分解生成物おるいはこれらの
励起状態に変化する。The present invention will be explained in detail below. Hydrogen gas and hydrocarbon gas are the decomposition products of atomic hydrogen and hydrocarbons. changes to these excited states.
基板上に付着した遊離炭素あるいは、炭化水素の分解生
成物は、励起状態にある分子ないしは原子からエネルギ
ーを授与され、ｓＰ３結合を有するダイヤモンドとなる
。更に、原子状水素は、ＳＰ。Free carbon or hydrocarbon decomposition products deposited on the substrate are given energy by molecules or atoms in an excited state, and become diamonds having sP3 bonds. Furthermore, atomic hydrogen is SP.
ｓｐ’結合をイｊする非ダイヤモンド炭素原子と反応し
、炭化水素となって基板上から離脱する為、基板上には
、ダイヤモンドだけが析出することになる。本発明の方
法においては、熱電子放射材の加熱面および基板面を反
応ガス流に平行ないしは平行に近くなるように配置する
ことによって、上記の原子状水素、炭化水素の分解生成
物あるいはこれらの励起状態にあるものを基板付近で均
一に生じせしめ、基板上に析出する非ダイヤモンド炭素
を完全に除去できることになる。非ダイヤモンド炭素の
存在しない清浄なダイヤモンド表面は、ダイヤモンドの
成長に好ましｂ条件であシ、均一にしかも早い成長速度
でダイヤモンド膜が得られ、従来技術の欠点を改善でき
る。Since it reacts with non-diamond carbon atoms that have sp' bonds and becomes hydrocarbons, which are separated from the substrate, only diamond is deposited on the substrate. In the method of the present invention, by arranging the heating surface of the thermionic emitting material and the substrate surface so that they are parallel or nearly parallel to the reaction gas flow, the above-mentioned atomic hydrogen, decomposition products of hydrocarbons, or the decomposition products thereof are produced. The excited state is uniformly generated near the substrate, and non-diamond carbon deposited on the substrate can be completely removed. A clean diamond surface free of non-diamond carbon provides favorable conditions for diamond growth, and a diamond film can be obtained uniformly and at a high growth rate, thereby improving the drawbacks of the prior art.
本発明において使用する混合ガスに対する炭化水素の容
す、％は、水素ガスによる非ダ・イヤモンド炭素の分解
が均一に行なわれ、非ダイヤモンド炭素が生成しにくい
為、上限は２０％が望捷しい。The upper limit of the percentage of hydrocarbons in the mixed gas used in the present invention is desirably 20%, since non-diamond carbon is uniformly decomposed by hydrogen gas and non-diamond carbon is difficult to generate. .
下限は、容ｆｔ％が０．０１％よシ小さくなると成長速
度が極端に遅くなる為、０．０１％が望ましい。膜状ダ
イヤモンド成長時には、１〜５−が望ましい。The lower limit is preferably 0.01% because the growth rate becomes extremely slow when the volume ft% is smaller than 0.01%. When growing diamond in the form of a film, a range of 1 to 5- is desirable.
熱電子放射材の加熱温度は、炭化水素および水素ガスの
接触分解、および励起効果を考慮すると１８００℃以上
が好ましい。The heating temperature of the thermionic emission material is preferably 1800° C. or higher in consideration of the catalytic decomposition of hydrocarbon and hydrogen gas and the excitation effect.
基板温度は、引出炭素の構造に直接影響を及ぼす因子で
あり、低すぎると、析出物はアモルファス状と寿る。ま
た高すぎるとダイヤモンドからグラファイトに変態する
ので、６００〜１０００℃が好ましい。The substrate temperature is a factor that directly affects the structure of the drawn carbon; if it is too low, the precipitate remains amorphous. Further, if the temperature is too high, diamond will transform into graphite, so 600 to 1000°C is preferable.
熱電子放射材は、熱電子放出能力大、高温における低蒸
気圧、畠融点等が必要条件であるため、タングステン、
ホウ化ランタン等が望ましい。特に製造しやすいタング
ステンが好ましい。Tungsten,
Lanthanum boride etc. are preferable. Tungsten, which is easy to manufacture, is particularly preferred.
熱電子放射材の加熱面および基板面に平行ないしは平行
に近くなるように反応ガスを流す構造として、第２図お
よび第３図に示すような構造が考えられるが、基板に対
する熱電子放射材の距離が一定である第２図に示すよう
な構造が望ましい。The structure shown in Figures 2 and 3 can be considered as a structure in which the reactive gas flows parallel or nearly parallel to the heating surface of the thermionic emitter and the substrate surface, but the structure shown in Figures 2 and 3 is conceivable. A structure as shown in FIG. 2 in which the distance is constant is desirable.
第２図において交流電源１に接続された熱電子放射材３
が支持台２中の穴を通シ、加熱面を植成している。第３
図は交流電源１に接続した２枚の金属板２に耐火物カバ
ー４が金属ネジ２にょシ組立てられ該金属板間に熱電子
放射材５が形成されている。In FIG. 2, thermionic emitter 3 connected to AC power source 1
is passed through a hole in the support base 2, and a heating surface is planted therein. Third
In the figure, a refractory cover 4 is assembled to two metal plates 2 connected to an AC power source 1 with metal screws 2, and a thermionic radiation material 5 is formed between the metal plates.
次に、本発明による気相合成ダイヤモンドの製造方法に
ついて図面を用いて説明する。第４図は本発明の方法を
実施する装置の態様を示す。反応管ｌ中の基板支持台２
上に基板３を設置し、基板３の上に熱電子放射材４を熱
電子放射材支持台５で設置する。次に減圧の場合は、コ
ツクロを閉じコック７を開いて真空排気装置８によって
反応管１の中を真空にする。同時に反応炉１３によシ基
板３を加熱後、コック９および１０を開いて炭化水素ガ
スボンベ１１．水素ガスボンベ１２よシ、ガス混合器１
５を紅白して炭化水素ガスおよび水素ガスを反応管１へ
導入して、圧力調整後熱電子放射材加熱電源１４によシ
、熱電子放射材４を加熱して、成長を開始する。導入ガ
スは、ガス排気口１６より排気する。常圧で運転する時
は、コ、り７を閉じて、コツクロを開いてガス排気口１
６よシ導大ガスを排気すればよい。昇温は、水素中で行
なう。Next, a method for manufacturing a vapor phase synthesized diamond according to the present invention will be explained using the drawings. FIG. 4 shows an embodiment of an apparatus for carrying out the method of the invention. Substrate support stand 2 in reaction tube l
A substrate 3 is placed thereon, and a thermionic radiation material 4 is placed on the substrate 3 using a thermionic radiation material support 5. Next, in the case of reducing the pressure, close the lid, open the cock 7, and evacuate the inside of the reaction tube 1 using the evacuation device 8. At the same time, after heating the substrate 3 in the reactor 13, the cocks 9 and 10 are opened and the hydrocarbon gas cylinder 11. Hydrogen gas cylinder 12, gas mixer 1
Hydrocarbon gas and hydrogen gas are introduced into the reaction tube 1, and after pressure adjustment, the thermionic emissive material heating power source 14 is used to heat the thermionic emissive material 4 and start growth. The introduced gas is exhausted from the gas exhaust port 16. When operating at normal pressure, close port 7, open port 7, and open gas exhaust port 1.
6. All you have to do is exhaust the gas. The temperature increase is carried out in hydrogen.
以下実施例に基づき、本発明を説明する。The present invention will be explained below based on Examples.
実施例１
２インチφのｎ型シリコンウエノ１−を基板として用い
た。０．３ ｍｍφのタングステンａ３を第２図のよう
に、加熱面がガス流に平行になるように石英ガラス製治
具２で固定し、交流電源ｌでこめタングステン線を１８
００℃に加熱した。このタングステン線直下１０ｔｎｍ
の所に電気炉で１０８０℃に傍熱加熱したシリコン基板
を設置した。反応ガス流量はメタンガスが毎分２０ｃｃ
で水素ガスが毎分１０ｔである。１０分の反応後シリコ
ン基板上には、非−常になめらかなダイヤモンド薄膜が
基板全域にわたって均一に得られた。膜厚は１．５μｍ
で、ウエノ・−全面で均一な膜厚が得られた。なお、ダ
イヤモンドの同定は電子線回折によって行なった。Example 1 An n-type silicon wafer 1- with a diameter of 2 inches was used as a substrate. As shown in Fig. 2, a 0.3 mmφ tungsten A3 was fixed with a quartz glass jig 2 so that the heating surface was parallel to the gas flow, and the tungsten wire was heated using an AC power supply l.
Heated to 00°C. 10tnm directly below this tungsten wire
A silicon substrate that had been indirectly heated to 1080°C in an electric furnace was placed there. The reaction gas flow rate is 20cc/min of methane gas.
The hydrogen gas flow rate is 10 tons per minute. After 10 minutes of reaction, a very smooth diamond thin film was obtained uniformly over the entire surface of the silicon substrate. Film thickness is 1.5μm
A uniform film thickness was obtained over the entire surface of Ueno. Note that diamond was identified by electron beam diffraction.
実施例２
５０１角のモリブデン板を基板に用いた。第３図のよう
Ｋ、タングステン板２を石英ガラス板４を用い、タング
ステン製ネジ３で固定する。このタングステン板２に０
．５ ｍ１ｌｌφのタングステン線５をコイル状に巻き
、タングステン製ネジ３で固定し、交流電源１で１８０
０℃に加熱した。このタングステン線５の直下１０龍の
所に電気炉で１０００℃に傍熱加熱したモリブデン基板
を設置した。反応ガス流量は、メタンガスが毎°分１０
ｃｃで水素ガスが毎分２０ｔである。１０分の反応後、
シリコン基板上には、非常になめらかなダイヤモンド薄
膜が基板全域にわたって均一に得られた。膜厚は２μｍ
でウェハー全面で均一であった。Example 2 A 501 square molybdenum plate was used as a substrate. As shown in FIG. 3, a tungsten plate 2 is fixed to a quartz glass plate 4 using tungsten screws 3. 0 to this tungsten plate 2
．． Wrap a tungsten wire 5 of 5 ml φ into a coil, fix it with a tungsten screw 3, and use an AC power source 1 to
Heated to 0°C. A molybdenum substrate indirectly heated to 1000° C. in an electric furnace was placed 10 degrees directly below the tungsten wire 5. The reaction gas flow rate is 10°/min for methane gas.
cc hydrogen gas is 20t/min. After 10 minutes of reaction,
A very smooth diamond thin film was obtained uniformly over the entire silicon substrate. Film thickness is 2μm
It was uniform over the entire wafer.
本発明によって、ダイヤモンド膜が大面積でかつ均質な
ものが速い成長速度で得られた。すなわち、従来法では
、１ ｃｒＡ以下の面積にしかもまばらにしかダイヤモ
ンド薄膜を作製できなかったものが、本発明の方法を用
いると２インチφ以上の基板上に均質に合成できる。し
かも成長速度は、毎時ｌＯミクロン程度であシ、従来法
に比し、数倍速い成長が実現された。According to the present invention, a large-area, homogeneous diamond film was obtained at a fast growth rate. In other words, the conventional method could produce a diamond thin film only sparsely on an area of 1 crA or less, but by using the method of the present invention, it can be homogeneously synthesized on a substrate with a diameter of 2 inches or more. Moreover, the growth rate was approximately 10 microns per hour, which was several times faster than the conventional method.
またダイヤモンド以外の基板上、たとえばシリコン上に
ダイヤモンド薄膜を得ることができ、工業的価値は大で
ある。Furthermore, it is possible to obtain a diamond thin film on a substrate other than diamond, such as silicon, which has great industrial value.
第１図は、従来法による装置の例を示す図。第２図、第
３図は、本発明による熱電子放射材の構成例を示す図。
第４図は本発明による製造装置の図である。
第１図において、ｌ・・・電気炉 ２・・・排気装置３
・・炭化水素と水素の供給装置 ４Ａ・・・基板支持棒
４Ｂ・・・基板支持台 ５・・・タングステン・フィラ
メント ６・・・混合ガス供給管 ７・・・反応管 ８
゜９．１０．１１・・・コック １２・・・排気口 １
３・・・基板を示す。
ＴＪｉ、２図において、１・・・交＋５ｔｉ、電源 ２
・・・支持台３・・・熱電子放射材を示す。
第３図において、１・・・交流電源 ２・・・金属板３
・・・金属ネジ ４・・・耐火物カバー ５・・・熱電
子放射材を示す。
第４図において、ｌ・・・反応管 ２・・・基板支持台
３・・・基板 ４・・・熱電子放射材 ５・・・熱電子
放射材支持台 ６・・・コック ７・・・コック ８・
・・真空排気装置 ９・・・コック １０・・・コック
１１・１．水素ガスボンベ １２・・・炭化水素ボン
ベ １３・反応炉 １４・・・熱電子放射材加熱電源
１５・・・ガス混合装置１６・・・ガス排気口を示す。FIG. 1 is a diagram showing an example of an apparatus according to a conventional method. FIG. 2 and FIG. 3 are diagrams showing an example of the structure of the thermionic emitting material according to the present invention. FIG. 4 is a diagram of a manufacturing apparatus according to the present invention. In FIG. 1, l...electric furnace 2...exhaust device 3
...Hydrocarbon and hydrogen supply device 4A...Substrate support rod 4B...Substrate support stand 5...Tungsten filament 6...Mixed gas supply pipe 7...Reaction tube 8
゜9.10.11...cock 12...exhaust port 1
3... Indicates a substrate. TJi, in figure 2, 1...AC +5ti, power supply 2
. . . Support stand 3 . . . Indicates thermionic emitting material. In Fig. 3, 1...AC power source 2...Metal plate 3
... Metal screw 4 ... Refractory cover 5 ... Indicates thermionic emitting material. In FIG. 4, l...Reaction tube 2...Substrate support stand 3...Substrate 4...Thermionic emission material 5...Thermionic emission material support stand 6...Cock 7... Cook 8・
...Vacuum exhaust device 9...Cook 10...Cook 11.1. Hydrogen gas cylinder 12... Hydrocarbon cylinder 13. Reactor 14... Thermionic radiation material heating power source
15... Gas mixing device 16... Gas exhaust port is shown.
Claims (1)
て、ダイヤモンドを合成する方法において、該熱電子放
射材によって構成される加熱面と、水素および炭化水素
とを含む混合ガス流と、該熱電子放射材の加熱面直下に
配置された基板面とを互いにそれぞれほぼ平行に設置す
ることを特徴とするダイヤモンドの合成方法。A method of synthesizing diamond by thermally decomposing a hydrocarbon gas with a thermionic emitting material in a hydrogen atmosphere, comprising: a heating surface constituted by the thermionic emitting material; a mixed gas flow containing hydrogen and a hydrocarbon; A method for synthesizing diamond, characterized in that surfaces of the thermionic emitter and a substrate placed directly below the heating surface are placed substantially parallel to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58220956A JPS60112699A (en) | 1983-11-24 | 1983-11-24 | Manufacture of diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58220956A JPS60112699A (en) | 1983-11-24 | 1983-11-24 | Manufacture of diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60112699A true JPS60112699A (en) | 1985-06-19 |
| JPH0480000B2 JPH0480000B2 (en) | 1992-12-17 |
Family
ID=16759186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58220956A Granted JPS60112699A (en) | 1983-11-24 | 1983-11-24 | Manufacture of diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60112699A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5110405A (en) * | 1988-06-09 | 1992-05-05 | Kabushiki Kaisha Toshiba | Method of manufacturing single-crystal diamond particles |
| US5110579A (en) * | 1989-09-14 | 1992-05-05 | General Electric Company | Transparent diamond films and method for making |
| US5310447A (en) * | 1989-12-11 | 1994-05-10 | General Electric Company | Single-crystal diamond of very high thermal conductivity |
| US5419276A (en) * | 1989-12-11 | 1995-05-30 | General Electric Company | Single-crystal diamond of very high thermal conductivity |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5891100A (en) * | 1981-11-25 | 1983-05-30 | Natl Inst For Res In Inorg Mater | Synthesizing method for diamond |
| JPS58110494A (en) * | 1981-12-17 | 1983-07-01 | Natl Inst For Res In Inorg Mater | Synthesizing method for diamond |
-
1983
- 1983-11-24 JP JP58220956A patent/JPS60112699A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5891100A (en) * | 1981-11-25 | 1983-05-30 | Natl Inst For Res In Inorg Mater | Synthesizing method for diamond |
| JPS58110494A (en) * | 1981-12-17 | 1983-07-01 | Natl Inst For Res In Inorg Mater | Synthesizing method for diamond |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5110405A (en) * | 1988-06-09 | 1992-05-05 | Kabushiki Kaisha Toshiba | Method of manufacturing single-crystal diamond particles |
| US5110579A (en) * | 1989-09-14 | 1992-05-05 | General Electric Company | Transparent diamond films and method for making |
| US5310447A (en) * | 1989-12-11 | 1994-05-10 | General Electric Company | Single-crystal diamond of very high thermal conductivity |
| US5419276A (en) * | 1989-12-11 | 1995-05-30 | General Electric Company | Single-crystal diamond of very high thermal conductivity |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0480000B2 (en) | 1992-12-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5891100A (en) | Synthesizing method for diamond | |
| JPS5927754B2 (en) | Diamond synthesis method | |
| Badzian et al. | Nucleation and growth phenomena in chemically vapor-deposited diamond coatings | |
| JP2001081564A (en) | Chemical vapor deposition system and method for synthesizing carbon nanotube using the same | |
| JPS63182297A (en) | Aggregate diamond | |
| JPH08225395A (en) | Production of diamond doped with boron | |
| CN111268656A (en) | Preparation method of boron nitride nanotube | |
| CN100432287C (en) | Process for preparing diamond film under strong magnetic field | |
| JPS60112699A (en) | Manufacture of diamond | |
| JPH0518796B2 (en) | ||
| JPS61158898A (en) | Production of ornamental diamond | |
| JPS6221757B2 (en) | ||
| JPS62158195A (en) | Synthesizing method of diamond | |
| KR20010049398A (en) | Method of synthesizing carbon nanotubes using low pressure chemical vapor deposition | |
| JPS60112698A (en) | Manufacture of diamond | |
| Zhu et al. | Effects of process parameters on CVD diamond films | |
| JPH0481552B2 (en) | ||
| JPS60145995A (en) | Preparation of diamond-shaped carbon | |
| JPS6261109B2 (en) | ||
| JPS60200896A (en) | Process for synthesizing fibrous diamond | |
| JPS632897A (en) | Method for synthesizing diamond by vapor phase method | |
| JPS593098A (en) | Synthesizing method of diamond | |
| JPH064915B2 (en) | Method for synthesizing cubic boron nitride | |
| JPS63297299A (en) | Method for vapor synthesis of diamond | |
| JP2005336043A (en) | Carbon nanotube and method of manufacturing carbon fiber |