JPS60200896A - Process for synthesizing fibrous diamond - Google Patents
Process for synthesizing fibrous diamondInfo
- Publication number
- JPS60200896A JPS60200896A JP59054048A JP5404884A JPS60200896A JP S60200896 A JPS60200896 A JP S60200896A JP 59054048 A JP59054048 A JP 59054048A JP 5404884 A JP5404884 A JP 5404884A JP S60200896 A JPS60200896 A JP S60200896A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diamond
- filament
- hydrocarbon
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Abstract
Description
【発明の詳細な説明】
本発明は繊維状ダイヤモンドの合成法、史に詳しくは常
圧以下の低圧領域において繊維状ダイヤモンドの合成法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for synthesizing fibrous diamond, and more particularly to a method for synthesizing fibrous diamond in a low pressure region below normal pressure.
従来、常圧以下の低圧領域においてダイヤモンドを合成
する方法として、
１）、減圧下で炭化水素を６００〜１３００ ℃に加熱
した基体の表面罠通じ、炭化水素を熱分解して遊離炭素
を生成せしめてダイヤモンドを析出させる化学気相析出
法。Conventionally, as a method for synthesizing diamond in a low-pressure region below normal pressure, 1) hydrocarbons were heated to 600 to 1300 °C under reduced pressure, passed through a trap on the surface of a substrate, and the hydrocarbons were thermally decomposed to generate free carbon. A chemical vapor deposition method in which diamond is precipitated using a chemical vapor deposition method.
２）、減圧下でアーク放電とスパッタリングを組合せて
、炭化水素を分解して炭素の正イオンビームを生成せし
め、これを加速、さらに集束して基板表面に衝突させて
ダイヤモンドを析出させるイオンビーム法。2) An ion beam method that combines arc discharge and sputtering under reduced pressure to decompose hydrocarbons and generate a positive carbon ion beam, which is then accelerated, focused, and collided with the substrate surface to deposit diamond. .
５）、水素と炭化水素ガスの混合ガスに高周波またはマ
イクロ波プラズマを発生させ、プラズマの高エネルギー
の荷電粒子によって炭化水素の解離と同時に励起状態の
炭素原子または励起状態の炭化水素を生成させて基体表
面にダイヤモンドを析出させるプラズマ化学気相析出法
。5) Generate high-frequency or microwave plasma in a mixed gas of hydrogen and hydrocarbon gas, and generate excited state carbon atoms or excited state hydrocarbons at the same time as hydrocarbon dissociation by high-energy charged particles of the plasma. A plasma chemical vapor deposition method that deposits diamond on the surface of a substrate.
４）、容器中に黒鉛、基板及び水素を封入し、黒鉛を高
温部に、基板を低温部に設置し、水素ガスを熱的あるい
は放電によって原子状水素を生成せしめ、不均化反応を
利用して基板表面にダイヤモンドを析出させる化学輸送
法。4) Enclose graphite, a substrate, and hydrogen in a container, place the graphite in a high-temperature part and the substrate in a low-temperature part, and generate atomic hydrogen from hydrogen gas by heat or electric discharge, using a disproportionation reaction. A chemical transport method in which diamond is deposited on the surface of a substrate.
などが知られている。etc. are known.
しかし、これらの方法のうち、繊維状のダイヤモンドを
合成し得られたのは、前記１）の方法によって、基体と
してダイヤモンドを使用し、これにＮｉ 、 Ｆｅ 、
Ｉｎの微粉末を付着させたものを使用した場合のみで
ある。However, among these methods, fibrous diamond was synthesized by the method 1) above, using diamond as a substrate and adding Ni, Fe,
This is only possible when using a material to which In fine powder is attached.
この化学気相析出法によると、次のような欠点がある。This chemical vapor deposition method has the following drawbacks.
１）、ダイヤモンドと黒鉛状炭素析出が同時に進行する
欠点があり、ダイヤモンドのみを析出する、には、析出
操作と酸素または水素ガスを導入して基板表面に析出し
た黒鉛状炭素を除去する操作とを周期的に繰返して行う
か、もしくは基板の加熱を間欠的に行わなければならな
い。従って析出速度がおそく、操作も面倒であった０２
）、また基板はダイヤモンドであることを必要としてい
た。1) There is a drawback that diamond and graphitic carbon precipitation proceed simultaneously, and in order to deposit only diamond, it is necessary to perform a deposition operation and an operation to introduce oxygen or hydrogen gas to remove graphitic carbon deposited on the substrate surface. This must be repeated periodically, or the substrate must be heated intermittently. Therefore, the precipitation rate was slow and the operation was troublesome.02
), and also required the substrate to be diamond.
本発明は繊維状ダイヤモンドの合成において前記の欠点
を解消せんとするものであり、その目的は基板がダイヤ
モンド以外のものも使用し得られ、また、ダイヤモンド
の析出を簡単な操作で行い得うｊれる方法を提供するに
ある。The present invention aims to eliminate the above-mentioned drawbacks in the synthesis of fibrous diamond, and its purpose is to enable the use of substrates other than diamond, and to allow diamond precipitation to be performed with simple operations. The goal is to provide a way to
不発明者らは前記目的を達成すべく鋭春研究の結果、原
料として水素と炭化水素の混合ガスを使用し、２０００
℃以上に加熱フィラメントあるいはプラズマを用いて水
素及び炭化水素の励起・解離を行わしめ、これを加熱し
た基材の表面に１０００Å以下の遷移金属粉末を付着さ
せた基体の表面にダイヤモンドを析出させると、基材が
ダイヤモンドでなくとも繊維状ダイヤモンドが析出され
ることが分った。また、この方法によると従来法におけ
るような欠点がなく、容易に繊維状ダイヤモンドを合成
し得られることを究明し、これらの知見に基いて本発明
を完成した。In order to achieve the above objective, the inventors used a mixed gas of hydrogen and hydrocarbon as a raw material as a result of Eishun research, and in 2000
Hydrogen and hydrocarbons are excited and dissociated using a heated filament or plasma above ℃, and diamond is deposited on the surface of the heated substrate with transition metal powder of 1000 Å or less attached to the surface. It was found that fibrous diamond can be precipitated even if the base material is not diamond. The inventors also discovered that this method does not have the drawbacks of conventional methods and can easily synthesize fibrous diamond, and based on these findings, the present invention was completed.
本発明の要旨は、水素と炭化水素の混合ガスを、２００
０℃以上に加熱されたフィラメントを用いて１００Ｔｏ
ｒｒ以下の減圧下あるいは高周波またはマイクロ波プラ
ズマを用い５００ Ｔｏｒｒ以下の減圧下で水素及び炭
化水素の励起、解離を行わしめ、５００〜１３００℃に
加熱された耐熱性基材表面に１０００λ以下の遷移金属
粉末を付着させた基体の表面にダイヤモンドを析出させ
ることを特徴とす４繊維状ダイヤモンドの合成法にある
。The gist of the present invention is that a mixed gas of hydrogen and hydrocarbons is
100To using a filament heated to 0℃ or higher
Excite and dissociate hydrogen and hydrocarbons under reduced pressure below rr or using high frequency or microwave plasma under reduced pressure below 500 Torr, and create a transition below 1000λ on the surface of a heat-resistant substrate heated to 500 to 1300°C. 4. A method for synthesizing fibrous diamond characterized by depositing diamond on the surface of a substrate to which metal powder is attached.
本発明において用いる炭化水素としては、例えばメタ／
ｌエタン、ブタン、エチレン、アセチレン等の易揮発性
炭化水素が挙げられる０メクイは水素対炭化水素がモル
比で１００対０．３であるのが好ましい。Hydrocarbons used in the present invention include, for example, meta/
It is preferable that the molar ratio of hydrogen to hydrocarbon is 100 to 0.3 for easily volatile hydrocarbons such as ethane, butane, ethylene, and acetylene.
′反応室の圧力は高周波またはマイクロ波によるプ・ラ
ズマを用いる場合は、５ＱＱ ’Ｉ’ｏｒｒ以下、好ま
財Ｈ＜は２００ Ｔｏｒｒ以下、熱フィラメン トを用
いる場合は％ １００ Ｔｏｒｒ以下、好ましくは５０
Ｔｏｒｒ以下であることが必要である０プラズマ法で
は５００ Ｔｏｒｒ 、熱フィラメントを用いる場合、
１００Ｔｏｒｒを超えると、粒状結晶もしくは黒鉛状炭
素が析出する。When using high frequency or microwave plasma, the pressure in the reaction chamber is 5QQ'I'orr or less, preferably 200 Torr or less, and when using a hot filament, %100 Torr or less, preferably 50 Torr or less.
In the zero plasma method, which requires a pressure of less than 500 Torr, when using a hot filament,
If the temperature exceeds 100 Torr, granular crystals or graphitic carbon will precipitate.
耐熱性基材としては、例えば、ｈｔ２ｏ、 、 Ｍｇｏ
。As the heat-resistant base material, for example, ht2o, , Mgo
.
ＢＮ 、 シリカガラス、 ５ｙ−ｓＮａ ＋ ＺＩ’
０２ 、Ｔ：ＬＯ２＋等が挙げられる。しかし、これに
限定されるものではす＜、加熱温度に耐えるものであれ
ばよい〇耐熱性基材の表面に付着させる遷移金属として
は、Ｆｅ 、 Ｃｏ 、 Ｎｉ 、 Ｔｉ 、 Ｍｏ
、Ｏｒ 、 Ｚｎ 、 Ｖ 。BN, silica glass, 5y-sNa + ZI'
02, T:LO2+, etc. However, it is not limited to this, as long as it can withstand the heating temperature. Examples of transition metals to be attached to the surface of the heat-resistant base material include Fe, Co, Ni, Ti, and Mo.
, Or, Zn, V.
Ｍｎ 、 Ｙ 、 Ｚｒ ＋ Ｎｂ ＋ Ｔｃ 、 Ｈ
ｆ’ 、 Ｔａ 、 Ｗ 、 Ｒｉ ＋Ｃｄ 、 Ｉｎ
、 Ｐｂ 、 Ｂｉが挙げられるが、なかでも、炭素
と結合するか、炭素を溶解するもの、例えばＦｅ 、
Ｇｏ 、 Ｎｉなどが好ましい。その粒径は１０００Å
以下であることが必要であり、それを超えると繊維状ダ
イヤモンドは析出しない。Mn, Y, Zr + Nb + Tc, H
f', Ta, W, Ri +Cd, In
, Pb, Bi, among others, those that combine with carbon or dissolve carbon, such as Fe,
Go, Ni, etc. are preferred. Its particle size is 1000Å
It is necessary that it is below, and if it exceeds it, fibrous diamond will not precipitate.
本発明の方法を実施する装置を図面に基いて説明すると
、第１図はマイクロ波によって誘発したプラズマを用い
る場合、第２図は高周波によって誘発したプラズマを用
いる場合、第３図は熱フィラメントを用いた場合におけ
る概要装置を示す。The apparatus for carrying out the method of the present invention will be explained with reference to the drawings. Fig. 1 shows a case in which plasma induced by microwaves is used, Fig. 2 shows a case in which plasma induced by radio frequency is used, and Fig. 3 shows a case in which a hot filament is used. The outline of the device when used is shown below.
第１図において、１は反応ガス供給装置、２はマイクロ
波発振機、３は導波管、４は反応室、５は基材表面ＶＣ
遷移金属微粉末を付着させた基体、６は支持台、７は排
気装置、８，９，１０．１１は調整パルプを示す。反応
室４内の支持台６の上に基体５を置いた後、排気装置７
を作動し、調整バルブ８を調整して反応室４内を減圧に
すると共に、反応ガス供給装置１より調整バルブ９，１
０゜１１を通して水素及び炭化水素ガスの流量を調整し
、所定圧に保持する。次にマイクロ波発振機２を作動し
てマイクロ波無極放電を誘発する０これにより励起・解
離状態の水素・炭化水素を生成し、基体の表面に繊維状
ダイヤモンドが生長する０第２図は第１図のマイクロ波
発振機２に代え、高周波発振機１５を使用し、同軸ケー
ブル１２を通−）じて平行電極板１３に出力を与え、反
応室４内に、１ンラズマを誘発させる。１４は基体加熱
用ヒータ←である。他は第１図におけると同様にして、
基体５の表面に繊維状ダイヤモンドが生長する０なお、
平行電極板１３に代え、コイルを用いてもよい。In FIG. 1, 1 is a reaction gas supply device, 2 is a microwave oscillator, 3 is a waveguide, 4 is a reaction chamber, and 5 is a substrate surface VC.
A substrate to which fine transition metal powder is adhered, 6 a support, 7 an exhaust device, and 8, 9, 10.11 a prepared pulp. After placing the substrate 5 on the support stand 6 in the reaction chamber 4, the exhaust device 7
and adjust the regulating valve 8 to reduce the pressure in the reaction chamber 4, and at the same time, the regulating valves 9 and 1 are operated from the reaction gas supply device 1.
The flow rates of hydrogen and hydrocarbon gas are adjusted through 0°11 and maintained at a predetermined pressure. Next, the microwave oscillator 2 is activated to induce a microwave non-polar discharge.This generates hydrogen and hydrocarbons in an excited and dissociated state, and fibrous diamond grows on the surface of the substrate. A high-frequency oscillator 15 is used in place of the microwave oscillator 2 shown in FIG. 14 is a heater for heating the substrate. The rest is the same as in Figure 1,
In addition, when fibrous diamond grows on the surface of the substrate 5,
A coil may be used instead of the parallel electrode plate 13.
第３図は、第１図及び第２図において用いたプラズマに
代え、熱フィラメント１６を用い、電流を通じて２００
０℃以上に加熱することにより、水素及び炭化水素の励
起、解離を行わせる。１７は基体加熱用電気炉である。In FIG. 3, a hot filament 16 is used instead of the plasma used in FIGS. 1 and 2, and a current is passed through the
By heating to 0° C. or higher, hydrogen and hydrocarbons are excited and dissociated. 17 is an electric furnace for heating the substrate.
他は第１図におけると同様にして基体の表面に繊維状ダ
イヤモンドが生長する。In other respects, fibrous diamond grows on the surface of the substrate in the same manner as in FIG.
実施例１゜
第１図に示す装置を用い、反応室４内の基体支持台６の
上にアルミナ板に粒径３００人の鉄微粉末を付着させた
基体５を置き、反応室４内を排気装置７により排気した
後、水素にメタン０．３容量％を混合したガスを４０
ｃｃ ／ ｍｉｎで流し、反応室４内を３０ Ｔｏｒｒ
に保持した０次にマイクロ発振機２を作動し、５００Ｗ
の出力を導波管３を通じて反応室４内に入射しプラズマ
を誘発させた０プラズマ空間で反応ガスの励起、解離及
び基体の加熱が行われ、５０時間析出を行ったところ、
長さ約１００μｍの繊維状ダイヤモンドが得られだ０実
施例２゜
第２図の装置において、反応室４内の平行電極板１３上
にシリカガラス板に粒径５００人のニッケル微粉末を付
着させた基体５を置き、排気装置７で排気して反応室４
内を減圧にすると共に、ヒーター１４で基体５を８５０
℃に上昇させた０次に反応：ガス供給装置１より調整バ
ルブ９，１０，１１、；を１調整し、水素にメタン０．
４容量％を混合した混合ガスを毎分５０ＣＣで流し、排
気装置７を作動すると共に調整バルブ８を調整して反応
室４内を５０Ｔｏｒｒに保持した。次に高周波発振機１
５を作動し、９００Ｗの出力を同軸ケーブル１２を通じ
て平行電極板１３に与えプラズマを誘起させた。この空
間で反応ガスの励起、解離が行われ、５０時間析出を行
ったところ、長さ８０μｍの繊維状ダイヤ；モーンドが
得られた。Example 1 Using the apparatus shown in FIG. 1, a substrate 5 made of an alumina plate with fine iron powder of 300 particles adhered to it was placed on a substrate support 6 in a reaction chamber 4, and the inside of the reaction chamber 4 was heated. After exhausting with the exhaust device 7, 40% of gas mixed with hydrogen and methane 0.3% by volume was added.
cc/min, and the inside of the reaction chamber 4 was set at 30 Torr.
Activate the micro oscillator 2 at zero order held at 500W.
The output of the reaction gas was introduced into the reaction chamber 4 through the waveguide 3 to induce plasma. The reaction gas was excited, dissociated, and the substrate was heated in the zero plasma space. After 50 hours of deposition,
A fibrous diamond with a length of about 100 μm was obtained. Example 2 In the apparatus shown in FIG. 2, fine nickel powder with a particle size of 500 μm was deposited on a silica glass plate on the parallel electrode plate 13 in the reaction chamber 4. The substrate 5 is placed thereon, and the reaction chamber 4 is evacuated using the exhaust device 7.
While reducing the pressure inside, the base 5 is heated to 850°C using the heater 14.
0°C reaction: Adjust the adjustment valves 9, 10, 11, ; from the gas supply device 1 by 1, and add methane to hydrogen.
A mixed gas of 4% by volume was flowed at a rate of 50 cc per minute, and the exhaust device 7 was operated and the regulating valve 8 was adjusted to maintain the inside of the reaction chamber 4 at 50 Torr. Next, high frequency oscillator 1
5 was activated, and an output of 900 W was applied to the parallel electrode plate 13 through the coaxial cable 12 to induce plasma. The reaction gas was excited and dissociated in this space, and precipitation was performed for 50 hours, resulting in a fibrous diamond with a length of 80 μm.
一実１施例３゜
’：Ｙ：Ｓ第３図に示す装置を用い、反応室４内の支持
台６上にマグネシャ板に粒径約３００人のコバルトｍ粒
子を付着させた基体５を置き、排気装置７で排気して反
応室４内を減圧にし、加熱用電気炉１７を用いて基体５
を９２０℃に上昇させた。次に反応ガス供給装置１より
前記と同様にして、水素にメタン０．２容量％混合した
ガスを毎分８０ｃｃで流し、排気装置７により反応室４
内を４０ Ｔｏｒｒの圧力に保持した。次にフィラメン
ト１６に電流を通じフィラメント温度を２０００℃に上
昇させ、１０時間析出させたところ、約１０μｍの長さ
の繊維状ダイヤモンドが得られた。Example 1 Example 3゜':Y:S Using the apparatus shown in FIG. The pressure inside the reaction chamber 4 is reduced by evacuation using the exhaust device 7, and the substrate 5 is heated using the heating electric furnace 17.
was raised to 920°C. Next, in the same manner as described above, a gas mixture of hydrogen and methane at 0.2% by volume was flowed through the reaction gas supply device 1 at a rate of 80 cc per minute, and the exhaust device 7 was used to flow the gas into the reaction chamber 4.
The internal pressure was maintained at 40 Torr. Next, an electric current was applied to the filament 16 to raise the filament temperature to 2000° C., and precipitation was performed for 10 hours, resulting in a fibrous diamond with a length of about 10 μm.
以上のように、本発明の方法によると、ダイヤモンド以
外の基材の上にも繊維状ダイヤモンドが容易に合成し得
られ、しかも、複雑な操作を必要としないで、黒鉛等を
含まない繊維状ダイヤモンドが合成し得られる優れた効
果を有する。As described above, according to the method of the present invention, fibrous diamond can be easily synthesized even on base materials other than diamond, and fibrous diamond that does not contain graphite etc. can be easily synthesized without the need for complicated operations. It has excellent effects obtained when diamond is synthesized.
図面は本発明方法を実施する装置の概要図で、第１図は
マイクロ波によって誘発したプラズマを用いる場合、第
２図は高周波によって誘発されたプラズマを用いる場合
、第３図は熱フィラメントによるガスの励起・解離を行
わせる場合を示す。
１：反応ガス供給装置、２：マイクロ波発振機、３：導
波管、 ４：反応室、
５：基体、 ６：支持台、
７：排気装置、
８ 、９ 、１０ 、１１ ：調整用バルブ、１２：同
軸ケーブル、１３：平行電極板、１４：ヒーター、 １
５：高周波発振機、１６：フィラメント、１７：電気炉
０
特許出願人 科学技術庁無機材質研究所畏１ ゛
後 藤 児。
旧・１ 、−；
茶２１カThe drawings are schematic diagrams of the apparatus for carrying out the method of the present invention, in which Fig. 1 shows a case in which plasma induced by microwaves is used, Fig. 2 shows a case in which plasma induced by radio frequency is used, and Fig. 3 shows a case in which a gas generated by a hot filament is used. This shows the case of excitation and dissociation of . 1: Reaction gas supply device, 2: Microwave oscillator, 3: Waveguide, 4: Reaction chamber, 5: Substrate, 6: Support stand, 7: Exhaust device, 8, 9, 10, 11: Adjustment valve , 12: coaxial cable, 13: parallel electrode plate, 14: heater, 1
5: High frequency oscillator, 16: Filament, 17: Electric furnace 0 Patent applicant: Science and Technology Agency, Inorganic Materials Research Institute, 1 ゛Goto. Old 1, -; Brown 21ka
Claims (1)
れたフィラメントを用いて１００ Ｔｏｒｒ以下の減圧
下あるいは高周波またはマイクロ波プラズマを用い５Ｑ
Ｑ Ｔｏｒｒ以下の減圧下で水素及び炭化水素の励起、
解離を行わしめ、５００〜１３ｏｏ℃に、加１熱された
耐熱性基材表面に１０００ Ａ以下の遷移金；属粉末を
付着させた基体の表面にダイヤモンド、を；析出させる
ことを特徴とする繊維状ダイヤモンドの合成法。A mixed gas of hydrogen and hydrocarbon is heated to 5Q using a filament heated to 200℃ or higher under reduced pressure of 100 Torr or lower or using high frequency or microwave plasma.
Excitation of hydrogen and hydrocarbons under reduced pressure below Q Torr,
The process is characterized by precipitating a transition metal of 1000 A or less on the surface of a heat-resistant base material that has been dissociated and heated to 500 to 130°C; and diamond on the surface of the base material to which metal powder has been attached. Synthesis method of fibrous diamond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59054048A JPS60200896A (en) | 1984-03-21 | 1984-03-21 | Process for synthesizing fibrous diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59054048A JPS60200896A (en) | 1984-03-21 | 1984-03-21 | Process for synthesizing fibrous diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60200896A true JPS60200896A (en) | 1985-10-11 |
| JPS6353159B2 JPS6353159B2 (en) | 1988-10-21 |
Family
ID=12959718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59054048A Granted JPS60200896A (en) | 1984-03-21 | 1984-03-21 | Process for synthesizing fibrous diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60200896A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246115A (en) * | 1988-03-26 | 1989-10-02 | Semiconductor Energy Lab Co Ltd | Method for forming coating film of carbon or material composed mainly of carbon |
| US5071708A (en) * | 1987-10-20 | 1991-12-10 | Showa Denko K.K. | Composite diamond grain |
| EP0691413A2 (en) | 1993-04-06 | 1996-01-10 | Sumitomo Electric Industries, Ltd. | Diamond reinforced composite material and method of preparing the same |
| US5677372A (en) * | 1993-04-06 | 1997-10-14 | Sumitomo Electric Industries, Ltd. | Diamond reinforced composite material |
-
1984
- 1984-03-21 JP JP59054048A patent/JPS60200896A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5071708A (en) * | 1987-10-20 | 1991-12-10 | Showa Denko K.K. | Composite diamond grain |
| WO1993013015A1 (en) * | 1987-10-20 | 1993-07-08 | Kunio Komaki | Composite diamond grains and process for their production |
| JPH01246115A (en) * | 1988-03-26 | 1989-10-02 | Semiconductor Energy Lab Co Ltd | Method for forming coating film of carbon or material composed mainly of carbon |
| EP0691413A2 (en) | 1993-04-06 | 1996-01-10 | Sumitomo Electric Industries, Ltd. | Diamond reinforced composite material and method of preparing the same |
| US5677372A (en) * | 1993-04-06 | 1997-10-14 | Sumitomo Electric Industries, Ltd. | Diamond reinforced composite material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6353159B2 (en) | 1988-10-21 |
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