JPS593016A - Manufacture of diamond - Google Patents
Manufacture of diamondInfo
- Publication number
- JPS593016A JPS593016A JP57111789A JP11178982A JPS593016A JP S593016 A JPS593016 A JP S593016A JP 57111789 A JP57111789 A JP 57111789A JP 11178982 A JP11178982 A JP 11178982A JP S593016 A JPS593016 A JP S593016A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- carbon
- hydrogen
- liq
- large quantities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】 本発明はダイヤモンドの製造方法に関する。[Detailed description of the invention] The present invention relates to a method for manufacturing diamond.
更に詳細にはダイヤそンド準安定領域におけるダイヤモ
ンドの製造方法に関する。ダイヤモンド準安定領域とは
、周知の炭素相図上の黒鉛対ダイヤモンド平衡線の下方
にあるとして一般に述べられている領域のことである。More specifically, the present invention relates to a method for producing diamond in the diamond metastable region. The diamond metastable region is the region commonly described as lying below the graphite-to-diamond equilibrium line on the well-known carbon phase diagram.
従来より大気圧以下のダイヤモンドが熱力学的に準安定
橙状態にあるとされる条件下でダイヤモンドを製造する
方法が知られている。たとえば特公昭４８−第３２５１
９号公報によると温度９００〜１１００℃、圧力０．１
へ５．０ｍ＋Ｈｇで炭素含有ガス中におけるダイヤモン
ド種結晶を増成できるとしている。しかしながら従来の
方法は種結晶ダイヤモンドの炭素原子の配向活性に基づ
いているため種結晶が必要であシ、ダイヤモンドの生成
速度も遅い。Conventionally, there has been known a method of manufacturing diamond under conditions where diamond is thermodynamically in a metastable orange state at a pressure below atmospheric pressure. For example, Tokuko Sho 48-3251
According to Publication No. 9, the temperature is 900 to 1100°C, the pressure is 0.1
It is said that diamond seed crystals can be grown in carbon-containing gas at a temperature of 5.0 m+Hg. However, the conventional method requires a seed crystal because it is based on the orientational activity of carbon atoms in a seed crystal diamond, and the rate of diamond production is also slow.
本発明の目的はダイヤモンドを容易で多量に製造できる
方法を提供することである。この目的を達成するために
本発明の方法を詳細に説明する。An object of the present invention is to provide a method for producing diamond easily and in large quantities. The method of the present invention will be described in detail to achieve this objective.
本発明の方法は液体水素中に遊離の原子状炭素を投入さ
せる。原子状炭素は凝集し、液体水素の触媒としての働
きによシダイヤモンドが生成する。遊離の原子状炭素と
は、個々バラバラの炭素原子型たけ炭素イオンのことで
ある。炭素原子が液体水素温度Ｋまで急激に冷却される
ため生成するダイヤそンドは非晶質なものが多く、生成
速度も著しく速い。遊離の原子状炭素を発生させ液体水
素中に投入させるには種々の既知の方法が利用できる。The method of the invention introduces free atomic carbon into liquid hydrogen. Atomic carbon coagulates, and diamond is produced by the action of liquid hydrogen as a catalyst. Free atomic carbon refers to carbon ions in the form of individual carbon atoms. Since the carbon atoms are rapidly cooled to the liquid hydrogen temperature K, most of the diamonds produced are amorphous, and the production rate is extremely fast. Various known methods are available for generating and introducing free atomic carbon into liquid hydrogen.
たとえば液面近くの空間に設置した黒鉛をレーザー、赤
外線のような電磁波を用いて加熱、蒸発させても良い。For example, graphite placed in a space near the liquid surface may be heated and evaporated using electromagnetic waves such as a laser or infrared rays.
炭素電極の放電により発生させても良い。液面近くの空
間にて、炭素原子を遊離させる化学反応をおこなわせて
も良い。たとえば次の反応等が利用できる。It may also be generated by discharging a carbon electrode. A chemical reaction that liberates carbon atoms may be performed in a space near the liquid surface. For example, the following reactions can be used.
００Ｒ＋ ２Ｍｆ→０ ＋ ２ＭｆＯ
炭素化合物を熱分解させても良い。たとえば次の反応等
が利用できる。00R+ 2Mf→0+2MfO The carbon compound may be thermally decomposed. For example, the following reactions can be used.
ＯＨ→Ｏ＋ ２Ｈ。OH→O+ 2H.
遊離の炭素原子を液体水素に到達させるため、また到達
する壕えに炭素原子間子が結合することを防ぐため、ヘ
リウム、゛アルゴンカどの不活性ガスまたは水素分子ガ
スをキャリアーガスおよび稀釈剤として使用し、ても良
い。本発明は液体水素に遊離炭素原子を投入させるだけ
でダイヤモンドが生成するため、ダイヤモンド安定領域
で合成する高圧法のような特別に高い圧力を必要としな
い。またダイヤモンド準安定領域で合成する、従来知ら
れている低圧法のように反応器を大気圧以下に減圧する
必要もない。本発明で圧力の制限はとくにないが通常装
置の簡易性から大気圧で実施するのが良い。また本発明
では種結晶ダイヤモンドも必要とし力い。液体水素中に
遊離の炭素原子を供給すれば良いので多量のダイヤモン
ドを容易に合成できる。以上の記載から明らかなように
本発明は容易に多量のダイヤモンドを製造できる方法を
提供するもので産業上きわめて有用である。Inert gases such as helium, argon, or hydrogen molecular gas are used as carrier gas and diluent to allow free carbon atoms to reach liquid hydrogen and to prevent carbon molecules from bonding to the reaching grooves. Yes, it's okay. In the present invention, diamond is produced simply by introducing free carbon atoms into liquid hydrogen, so there is no need for particularly high pressure, unlike the high-pressure method used for synthesis in the diamond stability region. Furthermore, there is no need to reduce the pressure of the reactor below atmospheric pressure, unlike the conventional low-pressure method that synthesizes in the diamond metastable region. Although there are no particular pressure restrictions in the present invention, it is usually preferable to carry out the process at atmospheric pressure in view of the simplicity of the equipment. The present invention also requires a seed crystal diamond. Since it is only necessary to supply free carbon atoms to liquid hydrogen, a large amount of diamond can be easily synthesized. As is clear from the above description, the present invention provides a method for easily producing a large amount of diamond, and is extremely useful industrially.
特許出願人 西 １） 茂 雄Patent applicant Nishi 1) Shigeo
Claims (1)
ヤモンドを生成させることを特徴とするダイヤそンドの
製造法。A diamond manufacturing method characterized by producing diamond by adding free atomic carbon to liquid hydrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111789A JPS593016A (en) | 1982-06-30 | 1982-06-30 | Manufacture of diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57111789A JPS593016A (en) | 1982-06-30 | 1982-06-30 | Manufacture of diamond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS593016A true JPS593016A (en) | 1984-01-09 |
Family
ID=14570192
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57111789A Pending JPS593016A (en) | 1982-06-30 | 1982-06-30 | Manufacture of diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS593016A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0365594A (en) * | 1989-08-02 | 1991-03-20 | Yoshitoshi Nanba | Synthesis of diamond thin film from organic solution |
| US5154945A (en) * | 1990-03-05 | 1992-10-13 | Iowa Laser Technology, Inc. | Methods using lasers to produce deposition of diamond thin films on substrates |
| WO2004025002A1 (en) * | 2002-09-12 | 2004-03-25 | Skvortsov Vladimir Anatolievic | Method for synthesising diamond with the aid of magnetic monofields |
| WO2015197047A1 (en) | 2014-06-26 | 2015-12-30 | Friedrich-Schiller-Universität Jena | Atomic carbon source |
-
1982
- 1982-06-30 JP JP57111789A patent/JPS593016A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0365594A (en) * | 1989-08-02 | 1991-03-20 | Yoshitoshi Nanba | Synthesis of diamond thin film from organic solution |
| US5154945A (en) * | 1990-03-05 | 1992-10-13 | Iowa Laser Technology, Inc. | Methods using lasers to produce deposition of diamond thin films on substrates |
| WO2004025002A1 (en) * | 2002-09-12 | 2004-03-25 | Skvortsov Vladimir Anatolievic | Method for synthesising diamond with the aid of magnetic monofields |
| WO2015197047A1 (en) | 2014-06-26 | 2015-12-30 | Friedrich-Schiller-Universität Jena | Atomic carbon source |
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