JPS589372A - Optically triggered thyristor - Google Patents
Optically triggered thyristorInfo
- Publication number
- JPS589372A JPS589372A JP56106759A JP10675981A JPS589372A JP S589372 A JPS589372 A JP S589372A JP 56106759 A JP56106759 A JP 56106759A JP 10675981 A JP10675981 A JP 10675981A JP S589372 A JPS589372 A JP S589372A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- type
- fiber
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001960 triggered effect Effects 0.000 title abstract 2
- 239000013307 optical fiber Substances 0.000 claims abstract description 7
- 239000000835 fiber Substances 0.000 abstract description 15
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract 2
- 238000005452 bending Methods 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 229920002379 silicone rubber Polymers 0.000 abstract 1
- 239000004945 silicone rubber Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 2
- 230000001443 photoexcitation Effects 0.000 description 2
- 241001385733 Aesculus indica Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 230000035943 smell Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明αＮ４電圧回路に使用する光点弧サイリスタｔｔ
Ｃ＠丁心ものでるる。Detailed Description of the Invention Light firing thyristor tt used in the αN4 voltage circuit of the present invention
C@choshinmonoderu.
＃ｇ１図、及びｇ２＃Ａは従来の光点弧サイリスタ０＠
造を示す図で、図におｉて、（１）に光点弧サイリスメ
エレメン訃、ｕ）ｒｃＰ形シリコン、（組はｎ形シリコ
ン、 （４）はＰ形シリコン、（５Ｊはｎ形りリコンで
、よ起１形シリコン（８）Ｋαモリブデンによる陽極（
６）がろう付され、上記ｎ形７リコン（６）にはアルミ
による暎極（７ンがろう付けされてお多、また、電惚（
６）〜（７）閾（２）シリ” ” ／Ｉ ｉＺ） ｔ
Ｆ８） ｔ （４）、及び（５） ［ｆｌ Ｋ ｕクリ
コンゴ＾（８）によってその表向が保護されている。し
かして、（９）はこの光点弧サイリスタに光点弧１ｔ４
ｔ″尋人する光ファイバで、スイッチ叫の閉成時にグー
１（−１罵源（２）の供紺を受けて発光する発光ダイオ
ード四の光点弧信号【導入し、この時１ｇ ｍ Ｌ６）
〜（７）閣が導通されることによつ１王電源四〇％源電
圧ｔ＊荷島に供給するよりになっている。#g1 figure and g2#A are conventional light ignition thyristors 0@
In the figure, (1) is the light-activated thyristome element, (u) is rcP type silicon, (group is n-type silicon, (4) is P-type silicon, (5J is n-type An anode made of type 1 silicon (8) Kα molybdenum (
6) is brazed to the n-type 7 recon (6), and an aluminum pole (7) is brazed to the n-type 7 recon (6).
6) ~ (7) Threshold (2) Series "" /I iZ) t
The surface is protected by F8) t (4) and (5) [fl K u Kurikongo^ (8). Therefore, (9) causes light ignition 1t4 in this light ignition thyristor.
When the switch is closed, the light-emitting diode 4 that emits light upon receiving the dark blue of the light source (2) is introduced, and at this time 1g m L6 )
~ (7) By connecting the power source, 40% of the power source voltage t* is supplied to the power source.
なお、光点弧ｆｆ１号【４人する土紀元ファイバ（９）
に、第１図１ｌ−１ＩＬにおいてに、エレメント（１）
上で哲ジ曲けられたものｔ示し、また第２図構造におい
てに、垂直に固定されている５Ｏｔ−示してい心。In addition, light ignition FF No. 1 [4 people's Tokigen fiber (9)
In Figure 1 1l-1IL, element (1)
Above, the curved one is shown, and in the Figure 2 structure, the 5Ot-center is shown fixed vertically.
上記４遺におい工、スイッチ四七閉としてゲート備考１
１Ｌ＃（ロ）よシ殆光ダイオード（胸に′電流を流すと
、発光ダイオード（膓に例えば、９ｏｏｏ＆Ｘ＠度の光
を発生する。このｙｃμ元ファイバ（Ｑ） ｔ： 通し
てす（Ｕスタエレメント（１）に入射され、００元エネ
ルギーによｐ光励起電流がテイリスタエレメント（１ン
に訛れ、エレメント（１）は４ｆｉ状惑となって点弧す
ることＫなり、これによって王％＃Ａ四より陽極（６）
から臨−（γ）を逼して負荷（４）に電源電圧を供給す
ることができる。The above 4 smells, switch 47 closed and gate note 1
1L # (b) When a current is passed through the light-emitting diode (the chest), a light-emitting diode (for example, 9 ooo & Injected into the element (1), the P photoexcitation current due to the 00 element energy becomes the Tayrister element (pronounced 1), and the element (1) becomes 4fi-like and ignites. Anode (6) from A4
It is possible to supply the power supply voltage to the load (4) by tightening the current (γ).
しＰるに、Ｍ１凶の健米の光点弧サイリスタａ。However, M1's light ignition thyristor a is the best.
光点弧信号の導入ｍＫｓｍＬ九元ファイバを便用してい
るので曲けられた部分での元エネルギーの損失が大龜く
、このため十分な点弧エネルギーを侍ることがで龜なか
つた。また、第２図の従来の光点弧サイリスタは、直−
状のファイバｔサイリスタエレメント（１）に無直にな
るよ５眩けているので、元エネルギーの損失は少ないが
光点弧サイリスタｔＩｌ数スタックする場合Ｋに光点弧
信号の導入構造が蟻しくなるなどの欠点がめつｋ。Introduction of optical ignition signal Since a mKsmL 9-element fiber is used, there is a large loss of original energy at bent portions, which makes it difficult to provide sufficient ignition energy. Furthermore, the conventional light-igniting thyristor shown in FIG.
Since the optical fiber T thyristor element (1) is blinded, the loss of the original energy is small, but when the number of optical ignition thyristors tIl is stacked, the structure of introducing the optical ignition signal to K is awkward. There are some drawbacks such as naru.
本殉＠区よ記のような従来Ｏものの欠点を除去丁４７ｔ
ＪＣ）Ｋなされ７ｔ％ので、元エネルギーの損失が少な
く、ま九複数便用する場合も鬼気信号にて点弧するサイ
リスタとｐＩ３様な簡単な構造で使用できる光点弧サイ
リスタを提供することｔ目的として＾る。Removed the shortcomings of conventional ones such as Honsai@Kuyoki 47t
JC) To provide a light-ignition thyristor that can be used with a simple structure like pI3 and a thyristor that can be activated by a demonic signal, which has low loss of original energy because of its K content of 7t% and is used in multiple applications. As a purpose.
以下、本発明の一実厖匈【図について説明する。Hereinafter, a practical example of the present invention will be explained.
４３図におりて、（ロ）は光点弧サイリスタエレメント
上に当直に設けられ７を光電変換系子で、この光ｉｔｉ
換素子に、直線状の光ファイバ（９）からの光点弧１！
号の照射によって元を流を生じるようになってお９、光
電変換系子の受光面は直線状の光ファイバ（９）の照射
口に垂直状朧で同図するようになっている。即ち、第４
図による本発明の光点弧サイリスタの外観を示す糾祝図
のように元ファイバ（９）と接続される元コネクタＳ−
は、直線状０光ファイバ＋ｊ） を元１に変換素子に）
の受光ｌに酒直状感で対回するよう、本体ｌＩ向に設け
られている。−ｆ：の他は従来と同様でおる。In Fig. 43, (b) is a photoelectric conversion system 7 provided on duty on the light ignition thyristor element;
A light ignition 1 from a straight optical fiber (9) is applied to the conversion element!
The light receiving surface of the photoelectric conversion system is vertical to the irradiation port of the linear optical fiber (9) as shown in the figure. That is, the fourth
As shown in the diagram showing the external appearance of the light-igniting thyristor of the present invention, the original connector S- is connected to the original fiber (9).
is a linear 0 optical fiber + j) into an element 1)
It is provided in the direction of the main body so as to be directly opposite to the light receiving direction l. -f: The rest is the same as before.
したがって、第６，４図＃成において、スイッチ四を閉
とじゲー）ｆｉｒ考電源（ロ）より発光ダイオード四に
電流を流せば、発光ダイオード（至）はｙｔ？発生し、
この元エネルギーはｉｆ！ｉ状のファイバ（９）ｔ−通
してサイリスタエレメントに嶺硯された光電変＊素子（
ロ）に入射され、この元エネルギーによｐ光励起電流は
光電変換系子に）から９イリスタエレメントに流れティ
リスタエレメントｒｉ導壇状態となり、圧電源Ｕ印よｐ
陽極（６）から陰極（７）を鳩して負荷に）に電ｆｉが
流れるのは従来と同様でめる。Therefore, in Figures 6 and 4, if switch 4 is closed and current is applied to light emitting diode 4 from the power supply (b), the light emitting diode (to) will change to yt? occurs,
This original energy is if! A photoelectric converter * element (
b), and due to this original energy, the p photoexcitation current flows from the photoelectric conversion system () to the iristor element 9, and the iristor element ri becomes in a leading state, and the piezoelectric power source U and p
The electric current flows from the anode (6) to the cathode (7) and then to the load (as in the conventional case).
し〃ゝして１よ紀夷２ｉＩｉＭにおける光点弧サイリス
タにａ、光雇弧備考Ｏ尋人鄭に光電変換系子に）【設は
九ので、従来１ｆＩＩＯよう−に外部からの光点弧信号
を伝送す４ｔ元ファイバ（９）を博聞させて用いる必賛
がなく、５ｅフアイバ（９）とＯ徴絖角Ｋｉｔ自由なも
のとしてＩＥＩｉｌ状の元ファイバを用いることができ
、したがって、受光効率が良く、ま７ｔ、厖５図のよ５
に、光点弧サイリスタ１ｃ複数スタツクする場合に％、
九点弧サイリスタの接続体に刈し、不体側国コネクメＱ
４ｋＴＩＲけて元ファイバ（９）に通続する４底とする
ことができるので、光点弧信号の導入構造が簡単なｔの
となる。なお、第５図において、（ロ）は冷却片を示し
てｉる。Then, the light ignition thyristor in 1 and 2iIiM is a, and the photoelectric conversion system is in the photoelectric conversion system. There is no need to use a 4t original fiber (9) for signal transmission, and an IEIil-like original fiber can be used as a 5e fiber (9) and an O wire angle kit. Good efficiency, 7 tons, 5 liters
%, when multiple light ignition thyristors 1c are stacked,
Connected to a nine-point thyristor connection body, the unconnected country connects Q
Since the 4k TIR can be made into a 4-bottom wire connected to the original fiber (9), the structure for introducing the optical ignition signal becomes a simple one. In addition, in FIG. 5, (b) indicates a cooling piece.
なお、上記夷１Ｍ例でに、元ファイバと光電変換系子を
個別にしてＩ／に４が元ファイバに直接光電変ａＸ子を
設けてｔよ−、さらに、上記夷）１例では横方Ｉ’ｉＡ
Ｋ光７アイパを接続するように設けたが、自由な角板に
設けることもできるのに勿繊でめ々。In addition, in the above 1M example, the original fiber and the photoelectric conversion element are separated and the photoelectric conversion element is provided directly on the original fiber. I'iA
I installed it to connect the K-Hikari 7 Eyepa, but it can be installed on any corner plate, but it's a pain in the ass.
以上のように不発明によれば、元電変俟素子ｔサイリス
タエレメント上に取付けたので、元ファイバを直線状に
して元エネルギーの損失を少なくすることができ、サイ
リスタエレメ・ントに対して横方向にも元ファイバを接
続することかで＠るので、ａ数スタックする場合に針通
なものが得られるという効朱鷺擬する。As described above, according to the invention, since the original electric transformer element is installed on the thyristor element, the original fiber can be made straight and the loss of original energy can be reduced, and By connecting the original fibers in the direction as well, it is possible to simulate the effect that a needle can be obtained when stacking a number of fibers.
第１図と第２図にそれぞれ従来の光点弧サイリスタの構
造を示す＠−断面図、第５図は本発明の一夷２ｉｌｉＩ
Ｉ例による光点弧サイリスタの構造を示す側面明向図、
第４図は本発明による光点弧サイリスタの外観を示すｆ
Ｍ伐図、第５図に、本発明による光点弧サイリスタｔａ
叙情スタックとした場合の−ｘｍ例を示す外観図でるる
。
（１）：サイリスタエレメント
”）：ｐ形シリコン ＋８） ： 、Ｅｌ形シリコン
（４） ： Ｐ形シリコン （５） ： ｎ形シリコ
ンｔｏ） ： 陽１ｉシリコン （７） ： １Ｍ１
極シリコン（９）：元ファイバ （ロ）二元゛（変
換索子（至）：コネクタ
なお、図中、同一符号は同一、又ａ相当部分を示す。
代理人 葛 野 偏 −
第１ＦＩＡFigures 1 and 2 are cross-sectional views showing the structure of a conventional light-ignition thyristor, respectively, and Figure 5 is a cross-sectional view showing the structure of a conventional light-igniting thyristor.
A side bright view showing the structure of the light-ignition thyristor according to Example I,
FIG. 4 shows the external appearance of the light-ignition thyristor according to the present invention.
The light-ignition thyristor ta according to the present invention is shown in FIG.
This is an external view showing an example of -xm when used as a lyrical stack. (1): Thyristor element"): P-type silicon +8): , El-type silicon (4): P-type silicon (5): N-type silicon to): Positive 1i silicon (7): 1M1
Polar silicon (9): Original fiber (b) Binary element (conversion cable (to): connector In the diagram, the same reference numerals are the same and indicate the parts corresponding to a. Agent: Kuzuno Hiro - 1st FIA
Claims (1)
スタにおいて１元点弧゛ｌ＠号の尋人鄭に元電斌ｍ累子
を収は九ことｔ特徴とする光点弧サイリスタ。 （：Ａ）ｊｔ、Ａ弧ＩＩ号を伝送する光ファイバに厳絖
されるコネクタを本体ｉｌｌ向に設けて複数スタックす
るｍｇとし尺ことｔｑ＃倣とす４荷軒−累の範囲第１項
記載の光点弧サイリスタ。(1) A light-ignition thyristor that is characterized by 44 light-ignition thyristors that can be activated by irradiation with a single-source ignition. (:A) jt, a connector strictly connected to the optical fiber that transmits the A-arc II is provided toward the main body ill, and multiple stacks of mg and length are taken as tq#, and the range of 4 packages is the first term. Light-igniting thyristor as described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56106759A JPS589372A (en) | 1981-07-08 | 1981-07-08 | Optically triggered thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56106759A JPS589372A (en) | 1981-07-08 | 1981-07-08 | Optically triggered thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS589372A true JPS589372A (en) | 1983-01-19 |
Family
ID=14441835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56106759A Pending JPS589372A (en) | 1981-07-08 | 1981-07-08 | Optically triggered thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS589372A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6134453U (en) * | 1984-07-31 | 1986-03-03 | 電気化学計器株式会社 | Standard gas generation equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949587A (en) * | 1972-04-28 | 1974-05-14 | ||
| JPS5311839A (en) * | 1976-07-21 | 1978-02-02 | Nippon Packaging Kk | Surface treatment of carbon steel and alloyed steel for cold working |
| JPS5548977A (en) * | 1978-10-05 | 1980-04-08 | Toshiba Corp | Photo-thyristor stack |
| JPS5552261A (en) * | 1978-10-12 | 1980-04-16 | Toshiba Corp | Photoignition type semiconductor controlling rectifier |
| JPS5552259A (en) * | 1978-10-12 | 1980-04-16 | Toshiba Corp | Phototrigger controlled rectifying semiconductor device |
| JPS5656683A (en) * | 1979-10-13 | 1981-05-18 | Mitsubishi Electric Corp | Light-igniting thyristor device |
-
1981
- 1981-07-08 JP JP56106759A patent/JPS589372A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4949587A (en) * | 1972-04-28 | 1974-05-14 | ||
| JPS5311839A (en) * | 1976-07-21 | 1978-02-02 | Nippon Packaging Kk | Surface treatment of carbon steel and alloyed steel for cold working |
| JPS5548977A (en) * | 1978-10-05 | 1980-04-08 | Toshiba Corp | Photo-thyristor stack |
| JPS5552261A (en) * | 1978-10-12 | 1980-04-16 | Toshiba Corp | Photoignition type semiconductor controlling rectifier |
| JPS5552259A (en) * | 1978-10-12 | 1980-04-16 | Toshiba Corp | Phototrigger controlled rectifying semiconductor device |
| JPS5656683A (en) * | 1979-10-13 | 1981-05-18 | Mitsubishi Electric Corp | Light-igniting thyristor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6134453U (en) * | 1984-07-31 | 1986-03-03 | 電気化学計器株式会社 | Standard gas generation equipment |
| JPH039001Y2 (en) * | 1984-07-31 | 1991-03-06 |
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