JPS58108035A - Manufacture of flexible magnetic recording medium - Google Patents
Manufacture of flexible magnetic recording mediumInfo
- Publication number
- JPS58108035A JPS58108035A JP20492481A JP20492481A JPS58108035A JP S58108035 A JPS58108035 A JP S58108035A JP 20492481 A JP20492481 A JP 20492481A JP 20492481 A JP20492481 A JP 20492481A JP S58108035 A JPS58108035 A JP S58108035A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic recording
- recording medium
- base sheet
- target
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
Landscapes
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
(1) 発明の技留分野
本斃Ij1社7し命シプル鵬気記録謙体の製造方法に係
11.411に一直方向に一軸磁気異方性を有する7し
中シプル磁気記#謀体の製造方法に関する。[Detailed Description of the Invention] (1) The technical field of the invention relates to a method for manufacturing a 7-year-old ship that has uniaxial magnetic anisotropy in a straight direction in 11.411 The present invention relates to a method for manufacturing a Sipul magnetic recording body.
(2)技術の背景
最近、鼻気テープ成るいは磁気ディスク等の義気t―織
体に於て、媒体藺に対して一直方向に砿気記録する1直
磁化記録方式が高密度記録方式としで優れた方法である
として#&案されている。(2) Background of the technology Recently, a high-density recording method has been developed in which magnetic tape, magnetic disks, etc. #& has been proposed as being an excellent method.
これは−電磁化方式に於て反磁場による減磁作用か非常
に小さいことによる。そして誼垂直磁化方式の記録謀体
としては、膜面に対して―直方向の一軸磁気異方性を持
つスパッタ法により形成されたコパル)(Co)りpム
(Or)合金等の磁性合金膜が多く用いられ、諌磁性合
金展に於ける磁気層B特性の―直方向の角形成を向上さ
せる手段が種種の角度から検討されている現状である。This is because - in the electromagnetic system, the demagnetizing effect due to the demagnetizing field is very small. The recording material for the perpendicular magnetization method is a magnetic alloy such as Copal (Co) and PM (Or) alloy, which is formed by sputtering and has uniaxial magnetic anisotropy perpendicular to the film surface. At present, many films are used, and various angles are being investigated to improve the corner formation in the direction perpendicular to the magnetic layer B characteristic in the development of a magnetic alloy.
(3)従来技術と閲亀点
上記喬直磁−化記録方式の7し中シプル磁気記録謀体を
形成するに際して、従来は通常の高周数二極スパッタ形
成るいはVグネトロ/スパッタ装置を用い、走行するマ
イラ成るいはポリエステル尋からなるフレキシブル基体
シートを前記スパッタ装置の0oOr合金ターゲットに
対向して配置し該基体上KOOOr合金からなる磁気記
―謀体のスパッタ膜を被着させる方法が用いられてい友
、然し上記従来方法に於ては、印フレキシブル1体シ−
ト画がターゲツト面に対向している丸めに基体シートが
電子衝撃及びターゲツト面からの熱輻射によりてそや質
形温直以上に加熱嘔れ、基体シートの平i1直が損われ
る、(0)前記電子衝撃及び輻射熱による昇温によシ磁
気記録媒体膜の磁気層m%性に於ける喬直方向の角形性
が横われる、等の問題点がToつ九。(3) Prior art and review points When forming a medium sipple magnetic recording system using the above-mentioned direct magnetization recording method, conventionally, conventional high-frequency bipolar sputtering or V-Gnetro/sputtering equipment was used. A flexible substrate sheet made of mylar or polyester thin film is placed opposite the OoOr alloy target of the sputtering device, and a sputtered film of a magnetic recording material made of KOOOr alloy is deposited on the substrate. However, in the above conventional method, a single flexible sheet is used.
When the target image is facing the target surface, the base sheet is heated more than the normal temperature due to electron impact and heat radiation from the target surface, and the flatness of the base sheet is damaged. ) There are nine problems such as the fact that the squareness in the perpendicular direction in the m% of the magnetic layer of the magnetic recording medium film is changed due to temperature increase due to the electron impact and radiant heat.
(4) @明の目的
本偽$10目的は、磁気記録媒体膜をフレキシブル基体
シートの両INK低温で連続的に^連形成させることが
可f1亀スパッタ形成方法を提供し、上記問題点を除去
すhことKある。(4) Purpose of @Ming False $10 The purpose is to provide an f1 sputter formation method that allows magnetic recording media films to be continuously formed on both INKs of a flexible base sheet at low temperatures, and to solve the above problems. There is a method called removal.
(5) 斃明の構成
本発明はフレキシブル磁気記録媒体の製造方法に於て、
対向ターゲット方式のスパッタリング手段を用い、対向
ターゲットの側面近傍に設は九装置調節手段を具備する
単数着しくは複数の回転軸を介して対向ターゲットの側
面に面してフレキシブル1体シートを走行させ、該7レ
キシプル基体シートの両画に連続して磁気記録媒体膜を
スパッタ形成することを%像とする。(5) Structure of the present invention In a method for manufacturing a flexible magnetic recording medium,
Using a facing target type sputtering means, a single flexible sheet is run facing the side surface of the facing target via one or more rotating shafts equipped with a device adjustment means installed near the side surface of the facing target. , continuous sputtering of a magnetic recording medium film on both images of the 7 lexiple base sheet is defined as a % image.
泰 嬌Wの詳iIa表説明
(6)発明の実施町
以下本発明を一実施例について、第1図に示す誼実施例
に用いたスパッタリング装置の嶽部斜視模式図、及び第
2図に示する該スパッタリング装置に於ける矢視ム方向
側面図を用いて詳細に説明する。なおここで嬉1図及び
g2図に於ける各部は同記号で示しである。Detailed explanation of Yasushi W (6) Implementation of the invention The following is an example of the present invention, which is shown in FIG. The sputtering apparatus will be explained in detail using a side view in the direction of arrows. Note that each part in Figure 1 and Figure G2 is indicated by the same symbol.
本発明の一実施例に於て用いたスパッタリング装置は、
第1図及び第2図に示す鼾、うな構造を有してなりてい
る。即ち図示しない真空容器内に1例えばN極を主面1
1に向けて一様な密度で棒磁石1が塩め込まれ九上部タ
ーゲット電極2aと、同様な密度で8極を主面側に向け
て棒磁石1が纏め込まれた下部ターゲット電極2bが、
所望の間隔で対向せしめられた通常の対向ターゲット電
極が配設される。なお該対向ターゲット電極には通常通
シ電極の昇温を抑える良めの冷却水循槙機構3が付加さ
れる。11気記錐媒体材料からなるスパッタ・ターゲッ
ト例え1jooor合金ターゲット0及びabdそれぞ
れ上部ターゲット電極21L及び下部ターゲット電@2
bの主面上に取付けられる。The sputtering equipment used in one embodiment of the present invention was as follows:
It has a snoring structure shown in FIGS. 1 and 2. That is, in a vacuum container (not shown), for example, a N pole is placed on the main surface 1.
There are nine upper target electrodes 2a in which bar magnets 1 are filled with salt with a uniform density toward 1, and a lower target electrode 2b in which bar magnets 1 are packed together in a similar density with 8 poles facing the main surface side. ,
Ordinary opposing target electrodes are provided facing each other at a desired spacing. Note that a good cooling water circulation mechanism 3 is usually added to the opposing target electrode to suppress the temperature rise of the through electrode. 11 Sputter target made of conical medium material Example 1 Jooor alloy target 0 and abd Upper target electrode 21L and lower target electrode @2 respectively
It is attached on the main surface of b.
又シールドを兼ね九陽1に51及び5bは通常通ジター
ゲット電@ 2 &及び2bの両側面から僅かに離れ九
場所にそれぞれターゲット電極側面に平行して配設され
る。そして陽lk5 a * 5 bをへたてて史に3
0〜50(III)1m度離れたターゲット電極21及
び2bの両側方位置に、ターゲット電極側面に平行して
、例えば回転ドラム等からな9冷却水流通管6等からな
る冷却機構及び加熱線輪7勢からなる加熱機構を具備し
温度調節が可能な各2〔本〕の回転軸ga、gb及びg
c 、 8(1がそれぞれ配設されてなル、別に設けら
れた2($3のシート送シローラ9a、自すから送シ出
されたポリエステル尋からなる帯状の7レキシプル基体
シート1Gは前記1転軸7g、7b及び70.7+1間
に図示のようKたすき状にかけ渡され、諌回転軸〕4゜
l及び7a、71を介して対向する000r会金ターゲ
ツト4 a t 4 ’b C)1111部の側方を該
ターゲットの一面に面して移動しシート巻取シローシ1
1&。In addition, 51 and 5b, which also serve as shields, are usually arranged in parallel to the side surfaces of the target electrodes, slightly away from both sides of the target electrodes 2 & and 2b. And let the positive lk5 a * 5 b go down to history 3
0 to 50 (III) At both sides of the target electrodes 21 and 2b, 1 m degrees apart, and parallel to the side surfaces of the target electrodes, a cooling mechanism consisting of 9 cooling water flow pipes 6, etc., such as a rotating drum, etc., and a heating coil are installed. Two rotating shafts ga, gb, and g each equipped with a heating mechanism consisting of 7 units and capable of temperature adjustment.
c, 8 (1) are respectively disposed, 2 ($3) sheet feeding rollers 9a are provided separately, and a belt-shaped 7 lexiple base sheet 1G made of self-feeding polyester sheet is provided as described above. The 000r metal target 4a t 4'b C) 1111 is stretched across the rotating shafts 7g, 7b and 70.7+1 in a cross-shaped manner as shown in the figure, and faces across the vertical rotation shafts]4゜l and 7a, 71. The sheet winding sheet 1 is moved so that the side of the part faces one side of the target.
1&.
111)にそれ′ぞれ巻!取られるようになっている。111) and each volume! It is about to be taken.
なお上記構造に於て基体シート10を九すき状にかけ渡
したのはターゲット側面に直かに面するシート両面の面
積を均等にするためで、史に両面の被着膜厚を勢しくす
る九めにはたすき掛けの中点をターゲット間lll0中
心面と一致せしめる。In the above structure, the base sheet 10 is spread across nine spaces in order to equalize the area of both sides of the sheet facing directly to the target side. In order to do so, the midpoint of the cross-over is made to coincide with the inter-target lll0 center plane.
本発明の方法に於ては、例えば上記のようなスパッタリ
ング装置を用い、図示しない真空容器内を1 = 2
x 10−” (Torr )9度のアルボy (A
r)雰囲気に保ち、対向するターゲット電極2a及び2
bに例えばそれぞれ−500(V)@寂の直流負電圧−
1を印加し、陽極51及び5bをアースG即ち直流0〔
v〕電位とし、対向ターゲット間にプラスiを発生させ
て、諌7ラズマによりて励起された荷電アルゴン粒子(
ムr+)の衝撃により0oOr合金をスパッタさせる。In the method of the present invention, for example, a sputtering apparatus as described above is used, and the inside of a vacuum container (not shown) is 1 = 2.
x 10-” (Torr) 9 degrees Alboy (A
r) Keep the target electrodes 2a and 2 facing each other in the atmosphere.
For example, -500 (V) @ Jaku DC negative voltage for each b.
1 is applied, and the anodes 51 and 5b are connected to ground G, that is, DC 0 [
v] electric potential, generate plus i between the opposing targets, and charge argon particles (
The 0oOr alloy is sputtered by the impact of the 0oOr alloy.
このような対向ターゲット方式のスパッタに於ては、対
向するC00r倉金ターゲット4m、4b14I6に形
成されているターゲツト面に−直な磁界と電界が千行く
なる九めターゲット面間に1縮プラズマ12が発生し、
その結果ターゲットは高速でスパッタされ、0oOy合
金のスパッタ粒子は1Iik5aと5bの間隙部から側
方に放射状に飛び出し、#領域を送られているフレキシ
ブル基体シート10のターゲット側面に向う面に500
0(A/分) 1ilの速さで被着する。なお基体シ
ー)1Gは前述のように回転軸8.a 、 8b及びf
3o、8a間にそれぞれ九す龜がけ場れているので、両
面に同じ厚さの0oOrスパツメ展が被着される。この
ように内向に−じ厚さのスパッタ膜を形成することは、
膜付着による応力を両面間で相殺し、基体シートの変形
を防止するうえで重畳である。一方、0oOy等の磁気
記録媒体鵬をスパッタ形成する際に1良好な垂直方向の
磁気異方性を得るのに最適な基体温度が存在する。In such facing target type sputtering, a 1-condensed plasma 12 is generated between the nine target surfaces where the magnetic field and electric field are 1,000 lines perpendicular to the target surfaces formed on the opposing C00r metal targets 4m, 4b14I6. occurs,
As a result, the target is sputtered at a high speed, and the sputtered particles of the 0oOy alloy fly out radially to the side from the gap between 1Iik5a and 5b, and are deposited on the surface of the flexible base sheet 10 facing the target side surface that is being fed through the # area.
Deposits at a rate of 0 (A/min) 1 il. Note that the base seat) 1G is the rotating shaft 8. a, 8b and f
Since there are nine spouts between 3o and 8a, the same thickness of 0oOr spats is applied to both sides. Forming a sputtered film of the same thickness inward in this way
This is superimposed in order to offset stress caused by film adhesion between both surfaces and prevent deformation of the base sheet. On the other hand, there is an optimum substrate temperature for obtaining good perpendicular magnetic anisotropy when sputtering a magnetic recording medium such as 0oOy.
これはその温度がスパッタ時の特に膜成長に重畳な役1
1Ilりを果しておシ、それが前述し九−軸異方性の磁
気履歴特性を左右するからである。そしてこの最適亀覆
は100〔℃1程度以下の低温と考えられている。又一
方平滑な記録媒体面を形成することは、テープにしろ7
0ツビデイスクにしろ磁気ヘッドの安定浮上を保つうえ
で1めて重畳なことである。そこでフレキシブル基体シ
ートの熱変形を防止し平滑な媒体面を得るためKも基体
シートの温度上昇は制限され、例えはポリエステルから
なる基体シートに於ては基体シートの温度を150【′
O)以下徊度に抑える必資がある。This is because the temperature plays a superimposed role on film growth, especially during sputtering.
This is because it influences the magnetic hysteresis characteristics of the nine-axis anisotropy mentioned above. This optimum coating is thought to be at a low temperature of about 100°C or less. On the other hand, forming a smooth recording medium surface is important for tapes as well.
Even if it is a 0-tube disk, this is a superimposed factor in maintaining stable flying of the magnetic head. Therefore, in order to prevent thermal deformation of the flexible base sheet and obtain a smooth medium surface, the temperature rise of the base sheet is limited.For example, in the case of a base sheet made of polyester, the temperature of the base sheet is increased to 150
O) There is a need to keep things to a minimum.
本発明の方法に於ては、これらの点を考慮して基体シー
トの温度を低温に保′)1+−択がこうじられる。即ち
第1図及び第211Iに示すように、対向ターゲット構
造を有しフレキシブル基体シート10がターゲツト面に
対向しないので電子の衝撃、ターゲツト面からの熱輻射
勢による昇温が防止される。且り又フレキシブル基体シ
ー)10の温度が冷却、加熱機構を具備した回転軸8a
、gb、lie。In the method of the present invention, the temperature of the base sheet is maintained at a low temperature in consideration of these points. That is, as shown in FIGS. 1 and 211I, since the flexible base sheet 10 has a facing target structure and does not face the target surface, temperature rise due to electron impact and thermal radiation from the target surface is prevented. In addition, the rotating shaft 8a is equipped with a cooling and heating mechanism to adjust the temperature of the flexible base sheet 10.
,gb,lie.
8dとの間の熱伝導によって調節がなされる。そしてス
パッタ膜の被着速度は前記のように5000【1/分〕
1m度の高速であるので、所定の膜厚1【μlN]程度
の0oOrスパツタ膜を形成する―のシート送り速度は
高速になり、基体シート9の瓢皺は回転軸s a e
s b * 80+ 8 ”の温度と殆んど勢しい温度
に胸部できる。従って回転軸ga、8b、ga8dのI
IL度を100(’03以下の所定の低温に保つことに
よシ、7レキシプル基体シート100両面に0oOy合
金の低温スパッタ族を高速で形成させることがで龜る。Adjustment is made by heat conduction between 8d and 8d. And the deposition rate of the sputtered film is 5000 [1/min] as mentioned above.
Since it is a high speed of 1 m degree, the sheet feeding speed for forming a 0oOr sputter film with a predetermined film thickness of about 1 [μlN] is high, and the wrinkles of the base sheet 9 are aligned with the rotation axis s a e
The temperature of s b * 80 + 8'' is almost intense.Therefore, the I of the rotation axes ga, 8b, ga8d
By keeping the IL degree at a predetermined low temperature of 100 ('03 or less), it is possible to form a low-temperature sputter group of 0oOy alloy on both sides of the 7-lexiple base sheet 100 at a high speed.
なお上記実施例の方法に於て、対向ターゲットの側面長
を大きくシ、回転軸の長さを淡くし工、シートのたすt
I掛は回数を増すことによL IKスパッタ効率が増す
と同時に温度制御精度も向上する。In addition, in the method of the above embodiment, the side length of the opposing target is increased, the length of the rotating shaft is decreased, and the total length of the sheet is increased.
By increasing the number of I-threads, LIK sputtering efficiency increases and temperature control accuracy also improves.
上記実施例に於ては、対向ターゲットの両側方に基体シ
ートを走らせて二条の基体シートに同時にスパッタ膜の
形成を行−)九が、勿論事情によつては基体シートの退
行機構を対向ターゲットの片側に設けて一条の基体シー
トにスパッタ膜を形成しても嵐い。、又上記実施例に於
て社基体シートを一転軸に九すき掛けすることにより、
一つの対向ターゲットで基体シートの両面にスパッタ膜
を被着せしめたが、前記九すき掛けを行わず基体シート
の画情に対向ターゲットを設けて、基体シート1面に同
時にスパッタ族を被着せしめても良い。In the above embodiment, the base sheet is run on both sides of the opposing target to simultaneously form sputtered films on two strips of the base sheet. Even if it is provided on one side of the base sheet and a sputtered film is formed on a single strip of the base sheet, it will not be easy. , Also, in the above embodiment, by hanging the base sheet on the rotation shaft nine times,
The sputtered film was applied to both sides of the base sheet using one opposing target, but instead of performing the above-mentioned 9-ply coating, an opposing target was provided at the image level of the base sheet, and the sputtered film was applied to one side of the base sheet at the same time. It's okay.
(7)発明の詳細
な説明しえように本発明によれは、フレキシブル基体の
両面に低温高速で磁気記録媒体展をスパッタ形成するこ
とができる。従2て垂直方向の一軸異方性を有し、且つ
磁気履歴特性に於ける角形性が優れ高密度記録に適した
磁気記録媒体が形成できると同時に、被着膜の応力及び
加熱によるフレキシブル基体の変形が防止されるので、
ヘッドの安定浮上が充分に確保できる平滑性の優れたフ
レキシブル磁気記録媒体を製造することができる。(7) Detailed Description of the Invention According to the present invention, a magnetic recording medium can be formed by sputtering on both sides of a flexible substrate at low temperature and high speed. Therefore, it is possible to form a magnetic recording medium that has uniaxial anisotropy in the perpendicular direction and has excellent squareness in magnetic hysteresis characteristics and is suitable for high-density recording, and at the same time, it is possible to form a flexible substrate by stress and heating of the deposited film. This prevents deformation of the
A flexible magnetic recording medium with excellent smoothness that can sufficiently ensure stable flying of the head can be manufactured.
第1図は本発明の一実施例に用いたスパッタリング装置
の賛部斜視模式図で、第2図は同じく矢視A方向側面図
である。図に於て、4 a + 4 b Bコバルト・
クロム合金ターゲット、6は冷却水流通管、7は加熱線
輪、8at8b、8o、84は回転軸、。
9a、9bは送シローラ、X0Fiフレキシブル基体シ
ート、111.11b Fi巻巻取−−ラ、12は濃縮
プラズマを示す。
1g 2 図FIG. 1 is a schematic perspective view of a sputtering apparatus used in an embodiment of the present invention, and FIG. 2 is a side view in the direction of arrow A. In the figure, 4 a + 4 b B cobalt.
Chromium alloy target, 6 is a cooling water flow pipe, 7 is a heating coil, 8at8b, 8o, 84 is a rotating shaft. 9a and 9b are feeding rollers, X0Fi flexible base sheet, 111.11b Fi winding roller, and 12 are concentrated plasma. 1g 2 figure
Claims (1)
ターゲットの何面近傍にiけ九温度調節手*tA備する
単数着しく社複数の回転軸を介して対内ターゲットの何
面に面してフレキシブル基体シートを走行畜せ、誼フレ
キシブル基体シートt)llja@に連続して一気記録
媒体!aをスパッタ形成することを特徴とするフレキシ
ブル磁気記録謀体の製造方法。Using a facing target type sputtering means, a flexible base sheet is applied to any surface of the inner target through multiple rotating shafts equipped with nine temperature control means near each surface of the facing target. Run fast, flexible base sheet t)llja@ and recording media all at once! 1. A method for manufacturing a flexible magnetic recording material, comprising sputtering a.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20492481A JPS58108035A (en) | 1981-12-18 | 1981-12-18 | Manufacture of flexible magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20492481A JPS58108035A (en) | 1981-12-18 | 1981-12-18 | Manufacture of flexible magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS58108035A true JPS58108035A (en) | 1983-06-28 |
Family
ID=16498614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20492481A Pending JPS58108035A (en) | 1981-12-18 | 1981-12-18 | Manufacture of flexible magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58108035A (en) |
-
1981
- 1981-12-18 JP JP20492481A patent/JPS58108035A/en active Pending
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