JPH0555930B2 - - Google Patents
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- Publication number
- JPH0555930B2 JPH0555930B2 JP60209378A JP20937885A JPH0555930B2 JP H0555930 B2 JPH0555930 B2 JP H0555930B2 JP 60209378 A JP60209378 A JP 60209378A JP 20937885 A JP20937885 A JP 20937885A JP H0555930 B2 JPH0555930 B2 JP H0555930B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- substrate
- incident angle
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 65
- 239000010409 thin film Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 54
- 230000005291 magnetic effect Effects 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 230000005294 ferromagnetic effect Effects 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 229920002799 BoPET Polymers 0.000 description 12
- 230000005415 magnetization Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000002474 experimental method Methods 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 5
- 230000003685 thermal hair damage Effects 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明は、量産化に適したスパツタ法による垂
直磁気記録媒体の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method of manufacturing a perpendicular magnetic recording medium by a sputtering method suitable for mass production.
(ロ) 従来の技術
第９図に示すようにCo−Cr、Co−Cr−Rhな
どの強磁性金属の垂直磁化膜２を非磁性基板１上
にスパツタ形成して得られる垂直磁気記録媒体
は、残留磁束密度が大きく高密度記録に適してい
る。(b) Prior art As shown in FIG. 9, a perpendicular magnetic recording medium obtained by sputtering a perpendicularly magnetized film 2 of a ferromagnetic metal such as Co-Cr or Co-Cr-Rh on a non-magnetic substrate 1 is , has a large residual magnetic flux density and is suitable for high-density recording.
例えば、PET、ポリアミド、ポリイミドなど
のプラスチツクフイルム等の非磁性基板上に、
Co−Crなどの磁化膜を高速スパツタ形成する方
法として対向ターゲツト式スパツタ法、マグネト
ロン式スパツタ法を応用することが提案されてい
る。（雑誌「応用物理第48巻第６号第557〜561頁
「新しいスパツタ膜形成技術の動向」）
第１０図は一般的な対向ターゲツト式スパツタ
法を利用した磁気テープ製造装置の概略図であ
る。 For example, on a non-magnetic substrate such as a plastic film made of PET, polyamide, polyimide, etc.
It has been proposed to apply a facing target sputtering method and a magnetron sputtering method as a method for forming a magnetized film of Co--Cr or the like by high-speed sputtering. (Magazine Applied Physics Vol. 48, No. 6, pp. 557-561 "Trends in New Sputter Film Forming Technology") Figure 10 is a schematic diagram of a magnetic tape manufacturing apparatus using a general facing target sputtering method. .
この装置において、まず真空槽を十分排気した
後、Arガスを導入し、スパツタ電源４によりタ
ーゲツト５，５′（例えばCo−Cr合金板）に負の
高電圧を印加するとArガスがイオン化してプラ
ズマ放電が起る。この正に帯電したArイオンが
前記ターゲツトに衝突すると、ターゲツト表面の
粒子がスパツタされてキヤンローラ６によつて定
速移送される非磁性基板１上にCo−Crなどの磁
化膜が形成される。そしてキヤンローラ６の周面
の一部をキヤンマスク９で被覆し、キヤンローラ
６に纒周案内される非磁性基板１に対するスパツ
タ金属の入射角度を規制すると、基板上に垂直磁
化膜が形成される。 In this device, first, after sufficiently exhausting the vacuum chamber, Ar gas is introduced, and when a negative high voltage is applied to the targets 5 and 5' (for example, a Co-Cr alloy plate) using the sputter power supply 4, the Ar gas is ionized. Plasma discharge occurs. When these positively charged Ar ions collide with the target, particles on the surface of the target are sputtered and a magnetized film of Co--Cr or the like is formed on the non-magnetic substrate 1 which is transported at a constant speed by the can roller 6. A part of the circumferential surface of the can roller 6 is covered with a can mask 9 to regulate the angle of incidence of the sputtered metal onto the nonmagnetic substrate 1 which is guided around the can roller 6, thereby forming a perpendicularly magnetized film on the substrate.
第１０図において、７は供給ローラ、８は巻取
ローラ、１０，１０′はプラズマ収束用の磁石を
示す。非磁性基板１上に堆積するスパツタ粒子の
初期入射角θiを一定値以下に制限することは、高
性能な垂直磁化膜を形成する上で不可欠である。 In FIG. 10, 7 is a supply roller, 8 is a take-up roller, and 10 and 10' are magnets for plasma convergence. Limiting the initial incident angle θi of sputtered particles deposited on the nonmagnetic substrate 1 to a certain value or less is essential for forming a high-performance perpendicularly magnetized film.
一方、初期入射角θiを小さくすると、スパツタ
金属（粒子）の非磁性基板上への堆積率が悪くな
り、量産効率が著しく低下するという問題を残
す。 On the other hand, if the initial incident angle θi is made small, the deposition rate of sputtered metal (particles) on the non-magnetic substrate becomes poor, leaving the problem that mass production efficiency is significantly reduced.
またキヤンローラ６を加熱して非磁性基板１を
高温に保持することはその上に高保磁力を持つ垂
直磁化膜を形成する上で不可欠である。 Further, heating the can roller 6 to maintain the nonmagnetic substrate 1 at a high temperature is essential for forming a perpendicularly magnetized film having a high coercive force thereon.
一方非磁性基板温度を一定温度以上に加熱させ
ることは、PETフイルム等、耐熱性の低い基板
等への熱損傷を発生させ、またポリアミド、ポリ
イミドフイルム等の耐熱性を有する基板の場合で
も磁化膜形成中に基板自身のしわを生じさせ垂直
磁化膜の形成を困難にするという問題を残すこと
になる。 On the other hand, heating a non-magnetic substrate above a certain temperature can cause thermal damage to substrates with low heat resistance such as PET film, and even in the case of heat-resistant substrates such as polyamide and polyimide films, magnetized films This leaves the problem that the substrate itself wrinkles during formation, making it difficult to form a perpendicularly magnetized film.
(ハ) 発明が解決しようとする問題点
本発明はスパツタ中の非磁性基板温度の上昇に
よる熱損傷及びしわの発生を防ぐことにより、高
性能な垂直磁気記録媒体を量産性よく製造するた
めの方法を提供するものである。(c) Problems to be Solved by the Invention The present invention provides a method for mass-producing high-performance perpendicular magnetic recording media by preventing heat damage and wrinkles caused by the rise in temperature of non-magnetic substrates during sputtering. The present invention provides a method.
(ニ) 問題点を解決するための手段
定速移送される非磁性基板を比較的高温（T1
℃以上）に保ち、その上にCo−Cr等の強磁性金
属をスパツタ法により入射角θ1（但しθ1≦15°）で
被着して少くとも700O″e以上の高保磁力を呈し
後の工程でその上に被着するスパツタ粒子のエピ
タキシヤルな結晶成長を可能とする第１薄膜を形
成すると共に、前記第１薄膜上にスパツタされた
強磁性金属を上記非磁性基板の温度を比較的低温
（T2℃以下、但しT2＜T1）に保ち乍ら入射角θ2
（θ2≫θ1）で被着せしめ第２薄膜をエピタキシヤ
ルに成長形成する。(d) Measures to solve the problem A non-magnetic substrate that is transferred at a constant speed is heated to a relatively high temperature (T1
℃ or above), and then deposit a ferromagnetic metal such as Co-Cr on top of it by a sputtering method at an incident angle of θ1 (however, θ1≦15°) to exhibit a high coercive force of at least 700 O″e or more, and then apply it in subsequent steps. to form a first thin film that enables epitaxial crystal growth of sputtered particles deposited thereon, and to reduce the temperature of the nonmagnetic substrate to a relatively low temperature so that the ferromagnetic metal sputtered on the first thin film is heated to a relatively low temperature. (T2℃ or less, however, T2<T1) while keeping the incident angle θ2
(θ2≫θ1) and a second thin film is epitaxially grown.
(ホ) 作用
PET等の耐熱性の低いフィルム基板上に第１
薄膜を形成する際に、基板温度T1以上で、且つ
入射角θ1（但しθ1≦15°）でスパツタリングするこ
とにより、高保磁力でその上に後の工程で低温で
被着するスパツタ粒子のエピタキシヤルな結晶成
長を可能とする薄膜を形成する。その後基板温度
T2＜T1（T2は基板の融点に比して著しく低い）
の関係にある基板温度T2で第１薄膜上に強磁性
金属を入射角θ2（θ2≫θ1）でスパツタリングしエ
ピタキシヤルに結晶成長させて第２薄膜を形成さ
せると基板の熱損傷を無くし、高性能な垂直磁化
膜が堆積効率よく形成される。(e) Action: The first layer is placed on a film substrate with low heat resistance such as PET.
When forming a thin film, by sputtering at a substrate temperature of T1 or higher and at an incident angle of θ1 (however, θ1≦15°), sputtered particles are deposited on top of the thin film with high coercive force at a low temperature in a subsequent process. Forms a thin film that enables crystal growth. Then the substrate temperature
T2<T1 (T2 is significantly lower than the melting point of the substrate)
If a ferromagnetic metal is sputtered on the first thin film at an incident angle θ2 (θ2≫θ1) at a substrate temperature T2 with the relationship of A high performance perpendicular magnetization film can be deposited with high efficiency.
(ヘ) 実施例
本発明の基礎となる実験
(1) 第１０図の対向ターゲツト式スパツタ装置を
用いて、ポリイミドフイルムベース上にCo−
Crをスパツタリングする際に、初期入射角θiと
フイルムベース上に形成されたCo−Cr膜の残
留磁化比MV／MHとの関係を測定した。第２
図は、測定結果を初期入射角θiを横軸に、残留
磁化比MV／MHを縦軸にとつて表わしたもの
である。(F) Example Experiment (1) As the basis of the present invention, using the facing target sputtering apparatus shown in FIG.
When sputtering Cr, the relationship between the initial incident angle θi and the residual magnetization ratio MV/MH of the Co--Cr film formed on the film base was measured. Second
The figure shows the measurement results with the initial incident angle θi on the horizontal axis and the residual magnetization ratio MV/MH on the vertical axis.
この図から明らかなように初期入射角θiが小
さい程、Co−Cr膜の残留磁化比MV／MHが
大きくなる。MV／MHが１以上であることが
垂直磁化膜の条件であるから、第２図か明らか
な様に、Co−Cr垂直磁化膜を得るには初期入
射角θiを15°以内に制限する必要があることが
分る。 As is clear from this figure, the smaller the initial incident angle θi, the larger the residual magnetization ratio MV/MH of the Co--Cr film. Since the condition for a perpendicularly magnetized film is that MV/MH is 1 or more, as is clear from Figure 2, it is necessary to limit the initial incident angle θi to within 15° to obtain a Co-Cr perpendicularly magnetized film. It turns out that there is.
(2) 同様に、第１０図の装置を用いて、ポリイミ
ドフイルムベース上に、Co−Crをスパツタリ
ングする際に、初期入射角θiとフイルムベース
上に形成されるCo−Cr膜の堆積効率の関係を
測定した。第３図に初期入射角θi（横軸）とCo
−Cr膜の堆積効率（縦軸）との関係を示す。(2) Similarly, when sputtering Co-Cr onto a polyimide film base using the apparatus shown in Figure 10, the initial incident angle θi and the deposition efficiency of the Co-Cr film formed on the film base are The relationship was measured. Figure 3 shows the initial incident angle θi (horizontal axis) and Co
-Relationship with Cr film deposition efficiency (vertical axis) is shown.
第１０図のスパツタ装置の構造上、初期入射
角θi＝45°はキヤンマスク９を取外した状態と
同等である。ここではキヤンマスク９を取外し
たときの堆積効率を１として規格化した。この
図から分るように初期入射角θi＝15°（即ち
MV／MH＝１）のとき堆積効率は0.7となる。
MV／MHが1.5以上の更に高性能なCo−Cr垂
直磁化膜（MV／MHが大きい程、高記録密度
に適する）を得るためには、第２図から初期入
射角θi＝5°以内に制限する必要があるが、この
とき堆積効率は0.5以下に低下する。 Due to the structure of the sputtering apparatus shown in FIG. 10, the initial incident angle θi=45° is equivalent to the state in which the can mask 9 is removed. Here, the deposition efficiency when the can mask 9 was removed was standardized as 1. As can be seen from this figure, the initial incident angle θi = 15° (i.e.
When MV/MH=1), the deposition efficiency is 0.7.
In order to obtain a higher performance Co-Cr perpendicularly magnetized film with an MV/MH of 1.5 or more (the larger the MV/MH is, the more suitable it is for high recording density), the initial incident angle θi should be within 5°, as shown in Figure 2. Although it is necessary to limit the amount, in this case the deposition efficiency decreases to 0.5 or less.
前述の２つの実験(1)(2)から、高速スパツタ法
により高性能な垂直磁化膜を移動する非磁性基
板上に形成するには、スパツタ粒子の初期入射
角θiを小さくする必要があり、その結果スパツ
タ粒子の堆積効率が低下するという背反する要
因があることが判つた。 From the above two experiments (1) and (2), in order to form a high-performance perpendicularly magnetized film on a moving non-magnetic substrate using the high-speed sputtering method, it is necessary to reduce the initial incident angle θi of the sputtered particles. As a result, it was found that there is a contradictory factor in that the deposition efficiency of spatter particles decreases.
(3) 上述の実験結果に基づいて、本発明者等はポ
リイミドフイルムベース上にCo−Crをスパツ
タリング被着させる際に、第１薄膜２１（第４
図）を小さい初期入射角でスパツタリング被着
せしめ、垂直対水平残留磁化比が１以上でエピ
タキシヤルな結晶成長を可能とする第１薄膜を
形成し、その上にθ2≫θ1の角度で第２薄膜２２
（第４図）をスパツタリング被着させれば垂直
対水平残留磁化比が１以上の薄膜が効率よく形
成されるのではないかという予測を基に、初期
入射角θi＝5°でCo−Cr膜の第１薄膜２１を種々
の膜厚で形成し、更にその上に初期入射角θi＝
45°でCo−Cr膜の第２薄膜２２を全厚ｔが0.3μ
ｍになるように形成したときの第１薄膜の膜厚
と全層Co−Cr膜の残留磁化比MV／MHとの
関係を求めた。第５図は第１薄膜２１の厚みを
横軸、垂直対水平残留磁化比MV／MHを縦軸
にとり、実験(3)の結果を示すものである。(3) Based on the above experimental results, the present inventors have determined that the first thin film 21 (the fourth
(Fig.) is sputtered at a small initial incidence angle to form a first thin film with a vertical to horizontal residual magnetization ratio of 1 or more and which enables epitaxial crystal growth. thin film 22
Based on the prediction that a thin film with a vertical-to-horizontal residual magnetization ratio of 1 or more could be efficiently formed by sputtering Co-Cr (Fig. 4) at an initial incident angle of θi = 5°. The first thin film 21 of the film is formed with various film thicknesses, and the initial incident angle θi=
At 45°, the second thin film 22 of Co-Cr film has a total thickness t of 0.3μ.
The relationship between the thickness of the first thin film and the residual magnetization ratio MV/MH of the full-layer Co--Cr film was determined when the film was formed to have a thickness of m. FIG. 5 shows the results of experiment (3), with the horizontal axis representing the thickness of the first thin film 21 and the vertical to horizontal residual magnetization ratio MV/MH representing the vertical axis.
この図からMV／MHが１以上のCo−Cr膜
を得るには第１薄膜の膜厚を0.02μｍ以上にす
ればよいことが分る。第１薄膜の膜厚が0.05μ
ｍ以上でMV／MHが最大値1.5になる。このよ
うに第１薄膜を初期入射角θiを十分小さくして
形成すれば結晶粒子が膜面に垂直に成長し易く
なり更にその上に第２薄膜を初期入射角θiを極
力大きくして形成しても、第２薄膜の膜は第１
薄膜の上にエピタクシヤルに結晶成長するた
め、第２薄膜も垂直配向性のよい結晶粒子層と
なり、その結果残留磁化比MV／MHの大きい
膜を得ることができる。従つて、第２薄膜を高
い堆積効率で形成することができるので高性能
な垂直磁気記録媒体の量産性が向上する。 From this figure, it can be seen that in order to obtain a Co--Cr film with MV/MH of 1 or more, the thickness of the first thin film should be 0.02 μm or more. The thickness of the first thin film is 0.05μ
m or more, MV/MH reaches the maximum value of 1.5. In this way, if the first thin film is formed with a sufficiently small initial angle of incidence θi, the crystal grains will easily grow perpendicular to the film surface, and furthermore, the second thin film can be formed on top of it with the initial angle of incidence θi as large as possible. Even if the second thin film is
Since crystals grow epitaxially on the thin film, the second thin film also becomes a crystal grain layer with good vertical orientation, and as a result, a film with a large residual magnetization ratio MV/MH can be obtained. Therefore, since the second thin film can be formed with high deposition efficiency, mass productivity of high-performance perpendicular magnetic recording media is improved.
(4) 第１０図の対向ターゲツト式スパツタ装置を
用いて、ポリイミドフイルムベース上にCo−
Crをスパツタリングする際に、フイルム基板
温度とフイルム基板上に形成されたCo−Cr膜
の垂直方向保磁力Hc⊥の関係を測定した。第
６図は、測定結果を基板温度を横軸に垂直方向
保磁力を縦軸にとつて表わしたものである。(4) Using the opposed target sputtering device shown in Fig. 10, Co-sputter is applied onto the polyimide film base.
When sputtering Cr, the relationship between the film substrate temperature and the perpendicular coercive force Hc⊥ of the Co--Cr film formed on the film substrate was measured. FIG. 6 shows the measurement results with the substrate temperature on the horizontal axis and the vertical coercive force on the vertical axis.
この図から明らかな様に基板温度Tsが高い
程Co−Cr膜の垂直方向保磁力Hc⊥が高くな
る。リングヘツドによる垂直磁気記録では少な
くとも垂直方向保磁力Hc⊥が700O″e以上、好
ましくは1000O″e程度の膜が必要であるから、
第６図から明らかな様に、Co−Cr垂直磁化膜
を得るには基板温度を少なくとも100℃以上好
ましくは110〜120℃程度にする必要がある。こ
の様な実験結果から明らかな如く、高速スパツ
タ法により高性能な垂直磁化膜を移動する非磁
性基板上に形成するには、基板温度を高くする
必要があるが、高エネルギーのスパツタ粒子の
堆積により基板温度が更に上昇するためPET
フイルム等の耐熱性の低い基板上には膜形成が
困難になる。実験に依ればPETフイルムに熱
損傷、しわ発生なく、膜厚0.3μｍを膜形成でき
る基板温度は70℃以下であることが確認され
た。 As is clear from this figure, the higher the substrate temperature Ts, the higher the vertical coercive force Hc⊥ of the Co--Cr film. Perpendicular magnetic recording using a ring head requires a film with a perpendicular coercive force Hc⊥ of at least 700 O"e or more, preferably about 1000 O"e.
As is clear from FIG. 6, in order to obtain a Co--Cr perpendicular magnetization film, it is necessary to raise the substrate temperature to at least 100°C or more, preferably about 110 to 120°C. As is clear from these experimental results, in order to form a high-performance perpendicularly magnetized film on a moving non-magnetic substrate using the high-speed sputtering method, it is necessary to raise the substrate temperature; Because the substrate temperature further increases due to PET
It becomes difficult to form a film on a substrate with low heat resistance such as a film. According to experiments, it has been confirmed that the substrate temperature at which a film can be formed to a thickness of 0.3 μm without causing thermal damage or wrinkles on the PET film is 70°C or lower.
(5) 上述の実験結果に基づいて本発明者らは、
PETフイルムベース上にCo−Crをスパツタリ
ング被着させる際に第１薄膜２１（第４図）を
高い基板温度T1で膜厚を薄くしてスパツタリ
ング被着せしめ、高垂直方向保磁力でエピタキ
シヤルな結晶成長可能とする第１薄膜を形成
し、その上にT1よりも低温の基板温度T2で第
２薄膜２２（第４図）をスパツタリング被着さ
せれば高垂直方向保磁力の薄膜が形成されるの
ではないかという予測を基に、基板温度Ts(1)
＝120℃でCo−Cr膜の第１薄膜２１を種々の膜
厚で形成し更にその上に第２薄膜２２を基板温
度60℃、全厚が0.3μｍになるように形成したと
きの第１薄膜の膜厚と全層Co−Cr膜の垂直方
向保磁力Hc⊥の関係を求めた、第７図は第１
薄膜２１の膜厚を横軸、垂直方向保磁力Hc⊥
を縦軸にとつて示したものである。(5) Based on the above experimental results, the present inventors
When depositing Co-Cr on a PET film base by sputtering, the first thin film 21 (Fig. 4) is thinned and deposited by sputtering at a high substrate temperature T1, and is epitaxially deposited with a high vertical coercive force. If a first thin film that enables crystal growth is formed and a second thin film 22 (Fig. 4) is sputtered onto it at a substrate temperature T2 lower than T1, a thin film with a high perpendicular coercive force is formed. Based on the prediction that the substrate temperature Ts(1)
The first thin film 21 of the Co-Cr film was formed at various thicknesses at 120°C, and the second thin film 22 was further formed thereon at a substrate temperature of 60°C with a total thickness of 0.3 μm. The relationship between the thickness of the thin film and the perpendicular coercive force Hc⊥ of the full-layer Co-Cr film was determined, and Figure 7 is shown in Figure 1.
The horizontal axis is the film thickness of the thin film 21, and the vertical coercive force Hc⊥
is plotted on the vertical axis.
この図からHc⊥（垂直方向の保磁力）が
1000O″e程度のCo−Cr膜を得るには第１薄膜
の膜厚を0.02μｍ以上にすればよいことがわか
る。 From this figure, Hc⊥ (vertical coercive force) is
It can be seen that in order to obtain a Co--Cr film of about 1000 O''e, the thickness of the first thin film should be 0.02 μm or more.
次に基板温度T1＝120℃でCo−Cr膜の第１
薄膜２１を形成し、更にその上に第２薄膜２２
を種々の基板温度T2で全厚が0.3μｍになる様
に形成したときの第２薄膜の基板温度T2と全
層Co−Cr膜の垂直方向保磁力Hc⊥の関係を求
めた。第８図は、第２薄膜２２の基板温度Ts
(2)を横軸、垂直方向保磁力Hc⊥を縦軸にとつ
て示したものである。 Next, at the substrate temperature T1 = 120℃, the first layer of Co-Cr film
A thin film 21 is formed, and a second thin film 22 is further formed thereon.
The relationship between the substrate temperature T2 of the second thin film and the vertical coercive force Hc⊥ of the full-layer Co--Cr film was determined when the second thin film was formed at various substrate temperatures T2 so as to have a total thickness of 0.3 μm. FIG. 8 shows the substrate temperature Ts of the second thin film 22.
(2) is shown on the horizontal axis and the vertical coercive force Hc⊥ is shown on the vertical axis.
この図からHc⊥が700O″e以上のCo−Cr膜を
得るには第２薄膜の基板温度Ts(2)を40℃以上
にすればよいことがわかる。 From this figure, it can be seen that in order to obtain a Co--Cr film with Hc⊥ of 700 O″e or more, the substrate temperature Ts(2) of the second thin film should be set to 40° C. or more.
上述の実験により、第１薄膜形成時の基板温
度を120℃、膜厚を0.02μｍ以上とし、第２薄膜
の基板温度を60℃、全厚を0.3μｍとすれば垂直
方向保磁力Hc⊥が1000O″e程度となる。 According to the above experiment, if the substrate temperature during the formation of the first thin film is 120°C and the film thickness is 0.02 μm or more, and the substrate temperature of the second thin film is 60°C and the total thickness is 0.3 μm, the vertical coercive force Hc⊥ is It will be about 1000O″e.
この様に第１薄膜を基板温度を十分高くして
極薄く形成すれば第２薄膜基板温度を低くして
も第２薄膜は第１薄膜の上にエピタキシヤルに
結晶成長するため第２薄膜において高垂直方向
保磁力の膜を得ることができる。 In this way, if the first thin film is formed extremely thin at a sufficiently high substrate temperature, the second thin film will epitaxially grow crystals on top of the first thin film even if the second thin film substrate temperature is lowered. A film with high perpendicular coercive force can be obtained.
第１薄膜は極薄いため、高エネルギーのスパ
ツタ粒子の堆積による基板温度の上昇が低く、
従つてPET等耐熱性の低いフイルム上にも基
板熱損傷無く膜形成することができる。 Since the first thin film is extremely thin, the rise in substrate temperature due to deposition of high-energy spatter particles is low.
Therefore, it is possible to form a film on a film with low heat resistance such as PET without causing thermal damage to the substrate.
製造装置
第１図は、本発明の製造方法を実施するための
装置の一実施例を示すものである。この装置は基
本的に対向ターゲツト方式のスパツタリング装置
を採用している。Manufacturing Apparatus FIG. 1 shows an embodiment of an apparatus for carrying out the manufacturing method of the present invention. This equipment basically employs a facing target type sputtering equipment.
この装置では、真空槽３の中央にそれぞれ背面
にプラズマ集束用の永久磁石１０，１０′を備え
るCo−Crの対向ターゲツト５，５′を配し、その
左右の開口に面して一対のキヤンローラ６，６を
配置している。前記各キヤンローラの周面を纒周
して移送されるPET（或はポリイミド）フイルム
１は供給ロール７−キヤンローラ６−案内ロール
１１，１１，１１，１１−キヤンロール６′−巻
取ロール８の経路で略定速で移送される。 In this device, opposed Co-Cr targets 5 and 5' each having a permanent magnet 10 and 10' for plasma focusing on the back are placed in the center of a vacuum chamber 3, and a pair of can rollers are placed facing the left and right openings. 6,6 is placed. The PET (or polyimide) film 1 that is wrapped around the circumferential surface of each of the can rollers and transferred is routed through the supply roll 7 - the can roller 6 - the guide rolls 11, 11, 11, 11 - the can roll 6' - the take-up roll 8. It is transported at a substantially constant speed.
キヤンローラ６，６′の周面に沿つて案内され
るPETフイルム１は、いずれも同じ面がスパツ
タリング装置Ｓの開口側に面する様に案内され
る。両キヤンロール６，６′へのスパツタ粒子の
入射角及び膜堆積速度は水冷式のキヤンマスク
９，９′により調整することが出来る。実施例で
は、供給ロール７側のキヤンマスク９の初期入射
角θiaを5°に設定し、巻取りローラ８側のキヤン
マスク９′の初期入射角θibを5°に設定した。 The PET film 1 is guided along the circumferential surfaces of the can rollers 6 and 6' so that the same surface faces the opening side of the sputtering device S. The angle of incidence of sputtered particles onto both can rolls 6, 6' and the film deposition rate can be adjusted by water-cooled can masks 9, 9'. In the example, the initial incident angle θia of the can mask 9 on the supply roll 7 side was set to 5°, and the initial incident angle θib of the can mask 9' on the take-up roller 8 side was set to 5°.
上記PETフイルム（非磁性基板）の温度は前
記両キヤンロール６，６′をロールに内蔵するヒ
ータ等によつて加熱しロール温度を調整すること
により任意に設定することが出来る。この実施例
では、供給ロール７側のキヤンローラ６に巻付け
られその上に第１薄膜が形成されるPETフイル
ム１の温度を120℃に設定し、巻取ローラ１８側
のキヤンローラ６′に巻付けられその上に第２薄
膜が形成されるPETフイルム１の温度を60℃に
設定した。この様な構成で、まず、真空槽内を１
×10-6Torrに排気した後、Arガスを導入して２
×10-3Torrとし、PETフイルムを、15cm／min
の送り速度で移動させながら、スパツタ電力密度
10w／cm2でCo−Crd膜を形成すると膜厚0.3μｍ垂
直方向保磁力Hc⊥が1000O″eの良好な垂直磁化
膜を、PETフイルム上に熱損傷なくかつしわ発
生もなく形成することができた。 The temperature of the PET film (non-magnetic substrate) can be arbitrarily set by heating both the can rolls 6, 6' with a heater built into the rolls and adjusting the roll temperature. In this embodiment, the temperature of the PET film 1, which is wound around the can roller 6 on the supply roll 7 side and on which the first thin film is formed, is set to 120°C, and the PET film 1 is wound around the can roller 6' on the take-up roller 18 side. The temperature of the PET film 1 on which the second thin film was formed was set at 60°C. With this configuration, first, the inside of the vacuum chamber is
After exhausting to ×10 -6 Torr, Ar gas was introduced and
×10 -3 Torr, PET film 15cm/min
Sputter power density while moving at a feed rate of
When a Co-Crd film is formed at 10w/cm 2 , a perpendicularly magnetized film with a thickness of 0.3 μm and a perpendicular coercive force Hc⊥ of 1000 O″e can be formed on a PET film without thermal damage or wrinkles. did it.
発明者等の実験に依れば高性能なCo−Cr垂直
磁気記録媒体をPETフイルム等の耐熱性の無い
基板上でも製造し得ることが確認できた。 According to experiments conducted by the inventors, it has been confirmed that a high-performance Co--Cr perpendicular magnetic recording medium can be manufactured even on a non-heat-resistant substrate such as a PET film.
上記実施例では対向ターゲツト式スパツタ法で
プラスチツクフイルム上にCo−Cr膜を形成する
場合について述べたが、本発明はこれに限定する
ものでなく、マグネトロン式スパツタ法でも、
Co−Cr膜以外のCo−Cr−Rh等の垂直磁化膜で
も同様の効果が得られることが判つた。 In the above embodiment, a case was described in which a Co-Cr film was formed on a plastic film by a facing target sputtering method, but the present invention is not limited to this, and a magnetron sputtering method may also be used.
It has been found that similar effects can be obtained with perpendicularly magnetized films such as Co-Cr-Rh other than Co-Cr films.
上記実施例では対向ターゲツト式スパツタ法で
プラスチツクフイルム上にCo−Cr膜を形成する
場合について述べたが、本発明はこれに限定する
ものでなく、マグネトロン式スパツタ法でも、
Co−Cr膜以外のCo−Cr−Rh等の垂直磁化膜で
も同様の効果が得られる。 In the above embodiment, a case was described in which a Co-Cr film was formed on a plastic film by a facing target sputtering method, but the present invention is not limited to this, and a magnetron sputtering method may also be used.
Similar effects can be obtained with perpendicularly magnetized films such as Co-Cr-Rh other than Co-Cr films.
本発明を垂直磁気記録媒体の製法に応用する場
合にはスパツタリングする強磁性金属の堆積効率
を向上するために第１薄膜形成時の入射角θ1を絞
り、第２薄膜形成時の入射角θ2を出来るだけ開放
することが望ましい。 When the present invention is applied to the manufacturing method of perpendicular magnetic recording media, in order to improve the deposition efficiency of sputtering ferromagnetic metal, the incident angle θ1 when forming the first thin film is narrowed down, and the incident angle θ2 when forming the second thin film is reduced. It is desirable to open it up as much as possible.
(ト) 発明の効果
本発明によれば、PET等の耐熱性の低いフイ
ルム基板上に高保磁力の磁性層を能率よく形成出
来、特に、垂直対水平残留磁化率の高い高性能な
垂直磁気記録媒体の量産効率の良い製造法を提供
することができる。(G) Effects of the Invention According to the present invention, a magnetic layer with high coercive force can be efficiently formed on a film substrate with low heat resistance such as PET, and in particular, high-performance perpendicular magnetic recording with high vertical to horizontal residual magnetic susceptibility can be achieved. It is possible to provide a manufacturing method that is efficient in mass production of media.
第１図乃至第８図は本発明に係り、第１図は製
造装置の概略図、第２図は初期入射角θi対Co−
Cr膜の残留磁化比の関係を示す図、第３図は初
期入射角θi対Co−Cr膜の堆積効率化の関係を示
す図、第４図は磁気媒体の部分断面図、第５図は
Co−Crの第１薄膜厚対Co−Crの（第１薄膜＋第
２薄膜）のMV／MHの関係を示す図、第６図は
基板温度対保持磁力Hcの関係を示す図、第７図
はCo−Crの（第１薄膜の膜厚）対Co−Crの（第
１薄膜＋第２薄膜）の保磁力の関係を示す図、第
８図は第２薄膜の基板温度対Co−Cr膜の保磁力
を関係を示す図である。第９図及び第１０図は従
来例に係り、第９図は磁気記録媒体の部分断面
図、第１０図は製造装置の概略図である。
１……PETフイルム、６，６′……キヤンロー
ラ、５，５′……対向ターゲツト、７……供給ロ
ーラ、１８……巻取ローラ、９……キヤンマス
ク。
1 to 8 relate to the present invention, FIG. 1 is a schematic diagram of a manufacturing apparatus, and FIG. 2 is an initial incident angle θi vs. Co-
Figure 3 is a diagram showing the relationship between the residual magnetization ratio of the Cr film, Figure 3 is a diagram showing the relationship between the initial incident angle θi and the deposition efficiency of the Co-Cr film, Figure 4 is a partial cross-sectional view of the magnetic medium, and Figure 5 is the diagram showing the relationship between the initial incident angle θi and the deposition efficiency of the Co-Cr film.
Figure 6 is a diagram showing the relationship between the first thin film thickness of Co-Cr and MV/MH of Co-Cr (first thin film + second thin film). Figure 6 is a diagram showing the relationship between substrate temperature and holding magnetic force Hc. The figure shows the relationship between the coercive force of Co-Cr (thickness of the first thin film) versus Co-Cr (first thin film + second thin film), and Figure 8 shows the relationship between the substrate temperature of the second thin film and Co-Cr. FIG. 3 is a diagram showing the relationship between the coercive force of a Cr film. 9 and 10 relate to a conventional example, where FIG. 9 is a partial sectional view of a magnetic recording medium, and FIG. 10 is a schematic diagram of a manufacturing apparatus. 1... PET film, 6, 6'... Can roller, 5, 5'... Opposing target, 7... Supply roller, 18... Winding roller, 9... Can mask.
Claims (1)
膜を形成する垂直磁気記録媒体の製造方法におい
て、定速移送される前記非磁性基板を比較的高温
（T1℃以上）に保ち、その上に強磁性金属をスパ
ツタ法により入射角θ1（但しθ1≦15°）で被着して
少くとも700Oe以上の高保磁力を呈し後の工程で
その上に被着するスパツタ粒子のエピタキシヤル
な結晶成長を可能とする第１薄膜を形成すると共
に、前記第１薄膜上に上記非磁性基板の温度を比
較的低温（T2℃以下、但しT2＜T1）に保ち乍ら
入射角θ2（θ2≫θ1）の角度でスパツタにより被着
せしめ第２薄膜をエピタキシヤルに成長形成する
ことを特徴とする垂直磁気記録媒体の製造方法。1 In a method of manufacturing a perpendicular magnetic recording medium in which a ferromagnetic metal film is formed on a non-magnetic substrate by a sputtering method, the non-magnetic substrate, which is transferred at a constant speed, is kept at a relatively high temperature (T1°C or higher), and a strong Magnetic metal is deposited at an incident angle of θ1 (however, θ1≦15°) using the sputtering method, exhibiting a high coercive force of at least 700 Oe, and enabling epitaxial crystal growth of sputtered particles deposited thereon in a later process. A first thin film is formed on the first thin film, and an incident angle θ2 (θ2≫θ1) is formed on the first thin film while keeping the temperature of the nonmagnetic substrate at a relatively low temperature (T2°C or lower, however, T2<T1). 1. A method of manufacturing a perpendicular magnetic recording medium, comprising epitaxially growing a second thin film by sputtering.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20937885A JPS6267729A (en) | 1985-09-20 | 1985-09-20 | Production of magnetic recording medium |
| US06/864,357 US4767516A (en) | 1985-05-20 | 1986-05-19 | Method for making magnetic recording media |
| EP86106807A EP0202645B1 (en) | 1985-05-20 | 1986-05-20 | Method and apparatus for making magnetic recording media |
| DE8686106807T DE3682942D1 (en) | 1985-05-20 | 1986-05-20 | METHOD AND DEVICE FOR PRODUCING MAGNETIC RECORDING CARRIERS. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20937885A JPS6267729A (en) | 1985-09-20 | 1985-09-20 | Production of magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6267729A JPS6267729A (en) | 1987-03-27 |
| JPH0555930B2 true JPH0555930B2 (en) | 1993-08-18 |
Family
ID=16571927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20937885A Granted JPS6267729A (en) | 1985-05-20 | 1985-09-20 | Production of magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6267729A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5156552B2 (en) | 2008-09-08 | 2013-03-06 | 富士フイルム株式会社 | Method for producing gas barrier film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680831A (en) * | 1979-11-30 | 1981-07-02 | Toshiba Corp | Producing device for magnetic recording medium |
| JPS59129944A (en) * | 1983-01-12 | 1984-07-26 | Anelva Corp | Method and device for manufacturing magnetic recording medium |
| JPS59210531A (en) * | 1983-05-16 | 1984-11-29 | Teijin Ltd | Magnetic recording medium and its reproduction |
-
1985
- 1985-09-20 JP JP20937885A patent/JPS6267729A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5680831A (en) * | 1979-11-30 | 1981-07-02 | Toshiba Corp | Producing device for magnetic recording medium |
| JPS59129944A (en) * | 1983-01-12 | 1984-07-26 | Anelva Corp | Method and device for manufacturing magnetic recording medium |
| JPS59210531A (en) * | 1983-05-16 | 1984-11-29 | Teijin Ltd | Magnetic recording medium and its reproduction |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6267729A (en) | 1987-03-27 |
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