JPS5795677A - Amorphous silicon type photoelectric tranducer - Google Patents

Amorphous silicon type photoelectric tranducer

Info

Publication number
JPS5795677A
JPS5795677A JP55171375A JP17137580A JPS5795677A JP S5795677 A JPS5795677 A JP S5795677A JP 55171375 A JP55171375 A JP 55171375A JP 17137580 A JP17137580 A JP 17137580A JP S5795677 A JPS5795677 A JP S5795677A
Authority
JP
Japan
Prior art keywords
amorphous
layer
type
tranducer
sixc1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55171375A
Other languages
Japanese (ja)
Other versions
JPS6148276B2 (en
Inventor
Yoshihiro Hamakawa
Yoshihisa Owada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP55171375A priority Critical patent/JPS5795677A/en
Priority to US06/253,141 priority patent/US4385199A/en
Priority to CA000391378A priority patent/CA1176740A/en
Priority to EP81110111A priority patent/EP0053402B1/en
Priority to AU78224/81A priority patent/AU558650B2/en
Priority to AT81110111T priority patent/ATE38296T1/en
Priority to MX81190403A priority patent/MX157367A/en
Priority to DE8181110111T priority patent/DE3176919D1/en
Publication of JPS5795677A publication Critical patent/JPS5795677A/en
Priority to US06/420,711 priority patent/US4385200A/en
Publication of JPS6148276B2 publication Critical patent/JPS6148276B2/ja
Priority to AU65542/86A priority patent/AU588400B2/en
Priority to SG65589A priority patent/SG65589G/en
Priority to HK796/89A priority patent/HK79689A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To greatly improve photoelectric conversion effect by forming a layer of a p-i-n junction type element of an amorphous Si with a thin film of an amorphous p type silicon carbide formed by plasma analysis of silane and hydro carbon. CONSTITUTION:An amorphous SixC1-x is formed by plasma analysis (preferablly by glow analysis) using SinH2n+2 such as silane and saturated or unsaturated fat group element such as hydro carbon CnH2n+2 or CnH2n and doped by a group III element such as B to make a p type. This p type amorphous SixC1-x9 is deposited on a transparent electrode 8 on a glass plate 7 and laminated with the Si layer of an amorphous i layer 10 and an n layer 11 and an electrode 12 is attached to complete a photoelectric tranducer. Photoelectric conversion effect is greatly improved and dispersion of the quality is decreased because the p layer thus formed is relatively thin.
JP55171375A 1980-02-04 1980-12-03 Amorphous silicon type photoelectric tranducer Granted JPS5795677A (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP55171375A JPS5795677A (en) 1980-12-03 1980-12-03 Amorphous silicon type photoelectric tranducer
US06/253,141 US4385199A (en) 1980-12-03 1981-04-10 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
CA000391378A CA1176740A (en) 1980-12-03 1981-12-02 High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
DE8181110111T DE3176919D1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
AU78224/81A AU558650B2 (en) 1980-12-03 1981-12-03 Amorphous semiconductor high-voltage photovoltaic cell
AT81110111T ATE38296T1 (en) 1980-12-03 1981-12-03 PIN TYPE PHOTOVOLTIC CELL WITH HETEROJUNION BETWEEN AN AMORPHOUS SILICON COMPOUND AND AMORPHEN SILICON.
MX81190403A MX157367A (en) 1980-02-04 1981-12-03 IMPROVEMENTS TO AMORPHO P-I-N SILICON PHOTOVOLTAIC CELL
EP81110111A EP0053402B1 (en) 1980-12-03 1981-12-03 Pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon
US06/420,711 US4385200A (en) 1980-12-03 1982-09-21 Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
AU65542/86A AU588400B2 (en) 1980-12-03 1986-11-20 High-voltage photovoltaic cell having a hetero junction of amorphous semiconductor and amorphous silicon
SG65589A SG65589G (en) 1980-12-03 1989-09-20 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon
HK796/89A HK79689A (en) 1980-12-03 1989-10-05 Pin photovoltaic cell having a hetero junction of amorphous silicon compound and amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171375A JPS5795677A (en) 1980-12-03 1980-12-03 Amorphous silicon type photoelectric tranducer

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP58044689A Division JPS58190072A (en) 1983-03-16 1983-03-16 Amorphous silicon photoelectric element
JP58044688A Division JPS58190810A (en) 1983-03-16 1983-03-16 Manufacture of p type amorphous silicon carbide
JP3341477A Division JPH05343714A (en) 1991-12-24 1991-12-24 Manufacture of amorphous silicon photoelectric element
JP4113635A Division JP2530408B2 (en) 1992-05-06 1992-05-06 Method of manufacturing amorphous silicon photoelectric device

Publications (2)

Publication Number Publication Date
JPS5795677A true JPS5795677A (en) 1982-06-14
JPS6148276B2 JPS6148276B2 (en) 1986-10-23

Family

ID=15922010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171375A Granted JPS5795677A (en) 1980-02-04 1980-12-03 Amorphous silicon type photoelectric tranducer

Country Status (2)

Country Link
JP (1) JPS5795677A (en)
AU (1) AU588400B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62268128A (en) * 1986-05-15 1987-11-20 Sharp Corp Manufacture of microcrystal silicon carbide film

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5337718A (en) * 1976-09-21 1978-04-07 Asahi Glass Co Ltd Laminated glass with heating wire incorporated therein
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
JPS54141593A (en) * 1978-04-24 1979-11-02 Rca Corp Amorphous silicon solar battery
JPS54143086A (en) * 1978-04-28 1979-11-07 Rca Corp Schottky barrier amorphous silicon solar battery
JPS5568681A (en) * 1978-11-17 1980-05-23 Yoshihiro Hamakawa Amorphous silicon solar battery and fabricating the same
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPS55127080A (en) * 1979-03-26 1980-10-01 Matsushita Electric Ind Co Ltd Photoconductive element
JPS5664476A (en) * 1979-08-30 1981-06-01 Plessey Overseas Armophous silicon solar battery
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element
JPS5944791A (en) * 1982-09-07 1984-03-13 株式会社日立ホームテック High frequency heater with wireless probe

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE455554B (en) * 1980-09-09 1988-07-18 Energy Conversion Devices Inc FOTOSPENNINGSDON
US4394426A (en) * 1980-09-25 1983-07-19 Canon Kabushiki Kaisha Photoconductive member with α-Si(N) barrier layer

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
JPS5337718A (en) * 1976-09-21 1978-04-07 Asahi Glass Co Ltd Laminated glass with heating wire incorporated therein
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
JPS54141593A (en) * 1978-04-24 1979-11-02 Rca Corp Amorphous silicon solar battery
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS54143086A (en) * 1978-04-28 1979-11-07 Rca Corp Schottky barrier amorphous silicon solar battery
JPS5568681A (en) * 1978-11-17 1980-05-23 Yoshihiro Hamakawa Amorphous silicon solar battery and fabricating the same
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
JPS55127080A (en) * 1979-03-26 1980-10-01 Matsushita Electric Ind Co Ltd Photoconductive element
JPS5664476A (en) * 1979-08-30 1981-06-01 Plessey Overseas Armophous silicon solar battery
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element
JPS5944791A (en) * 1982-09-07 1984-03-13 株式会社日立ホームテック High frequency heater with wireless probe

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62268128A (en) * 1986-05-15 1987-11-20 Sharp Corp Manufacture of microcrystal silicon carbide film
JPH0554692B2 (en) * 1986-05-15 1993-08-13 Sharp Kk

Also Published As

Publication number Publication date
AU6554286A (en) 1987-02-19
JPS6148276B2 (en) 1986-10-23
AU588400B2 (en) 1989-09-14

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