JPS5568681A - Amorphous silicon solar battery and fabricating the same - Google Patents
Amorphous silicon solar battery and fabricating the sameInfo
- Publication number
- JPS5568681A JPS5568681A JP14253778A JP14253778A JPS5568681A JP S5568681 A JPS5568681 A JP S5568681A JP 14253778 A JP14253778 A JP 14253778A JP 14253778 A JP14253778 A JP 14253778A JP S5568681 A JPS5568681 A JP S5568681A
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- solar battery
- amorphous silicon
- layer
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE: To obtain a solar battery having high photoelectric conversion efficiency inexpensively by providing an n-type layer of amorphous silicon, i-type layer and a p-type layer controlled in its thickness laminated on a stainless steel substrate.
CONSTITUTION: A stainless steel substrate 31 mirror polished on the surface is contained in a reaction container, and an n-type layer 32, an i-type layer 33 and a p-type layer 34 are sequentially grown on the substrate 31 using SiH4 and PH3 and B2H6, and further carrier gas H2 to thereby form an amorphous silicon solar battery. Then, a transparent conductive film 35 is coated on the layer 34, a silver brazed contactor 36 is mounted at the peripheral edge of the film 35, and solar light rays 37 are incident to the conductive film 35 side. In this configuration the thickness of the p-type layer 34 as the uppermost layer is controlled to 50∼150Å. Thus, it can obtain the amorphous solar battery having approx. 3% of photoelectric conversion efficiency inexpensively to reduce the local level density created at its dangling bond so as to improve the yield thereof.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14253778A JPS5568681A (en) | 1978-11-17 | 1978-11-17 | Amorphous silicon solar battery and fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14253778A JPS5568681A (en) | 1978-11-17 | 1978-11-17 | Amorphous silicon solar battery and fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5568681A true JPS5568681A (en) | 1980-05-23 |
Family
ID=15317654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14253778A Pending JPS5568681A (en) | 1978-11-17 | 1978-11-17 | Amorphous silicon solar battery and fabricating the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5568681A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS5854678A (en) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | Solar battery element |
US6930238B2 (en) * | 2002-03-28 | 2005-08-16 | Canon Kabushiki Kaisha | Solar cell module-mounting structure and solar cell module array |
-
1978
- 1978-11-17 JP JP14253778A patent/JPS5568681A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS6148276B2 (en) * | 1980-12-03 | 1986-10-23 | Kanegafuchi Kagaku Kogyo Kk | |
JPS5854678A (en) * | 1981-09-28 | 1983-03-31 | Hitachi Ltd | Solar battery element |
JPS6322633B2 (en) * | 1981-09-28 | 1988-05-12 | Hitachi Ltd | |
US6930238B2 (en) * | 2002-03-28 | 2005-08-16 | Canon Kabushiki Kaisha | Solar cell module-mounting structure and solar cell module array |
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