JPS56152276A - Solar cell made of amorphous silicon thin film - Google Patents

Solar cell made of amorphous silicon thin film

Info

Publication number
JPS56152276A
JPS56152276A JP5426980A JP5426980A JPS56152276A JP S56152276 A JPS56152276 A JP S56152276A JP 5426980 A JP5426980 A JP 5426980A JP 5426980 A JP5426980 A JP 5426980A JP S56152276 A JPS56152276 A JP S56152276A
Authority
JP
Japan
Prior art keywords
thin film
amorphous silicon
silicon thin
solar cell
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5426980A
Other languages
Japanese (ja)
Other versions
JPS6230506B2 (en
Inventor
Hiroshi Okaniwa
Kenji Nakatani
Mitsuo Asano
Wataru Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP5426980A priority Critical patent/JPS56152276A/en
Publication of JPS56152276A publication Critical patent/JPS56152276A/en
Publication of JPS6230506B2 publication Critical patent/JPS6230506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the rflection preventive effect and the characteristic of a solar cell by properly selecting the height of a crest, the depth of a trough and surface ruggedness of a substrate, and by depositing an amorphous silicon thin film on the substrate. CONSTITUTION:An element for generating photoelectromotive force is formed by depositing an amorphous silicon thin film containing a hydrogen or fluorine atom on the substrate. The substrate used at this time has such surface ruggedness that the height of its crest and the depth of its trough locate in a range of 0.02-0.5mum from the center line thereof and the sum of the height and depth is not greater than 0.8mum.
JP5426980A 1980-04-25 1980-04-25 Solar cell made of amorphous silicon thin film Granted JPS56152276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5426980A JPS56152276A (en) 1980-04-25 1980-04-25 Solar cell made of amorphous silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5426980A JPS56152276A (en) 1980-04-25 1980-04-25 Solar cell made of amorphous silicon thin film

Publications (2)

Publication Number Publication Date
JPS56152276A true JPS56152276A (en) 1981-11-25
JPS6230506B2 JPS6230506B2 (en) 1987-07-02

Family

ID=12965848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5426980A Granted JPS56152276A (en) 1980-04-25 1980-04-25 Solar cell made of amorphous silicon thin film

Country Status (1)

Country Link
JP (1) JPS56152276A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115872A (en) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd Flexible photoelectromotive force generating device
JPS59200474A (en) * 1983-04-27 1984-11-13 Toshiba Corp Amorphous silicon thin film solar cell
JPS6057679A (en) * 1984-03-21 1985-04-03 Shunpei Yamazaki Semiconductor device
JPS6057678A (en) * 1984-03-21 1985-04-03 Shunpei Yamazaki Fluorescent lamp battery
JPS6057680A (en) * 1984-03-21 1985-04-03 Shunpei Yamazaki Semiconductor device
JPS6057616A (en) * 1984-03-21 1985-04-03 Shunpei Yamazaki Manufacture of semiconductor device
US4514582A (en) * 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
JPS6094781A (en) * 1983-10-27 1985-05-27 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6095978A (en) * 1983-10-31 1985-05-29 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
JPS60170269A (en) * 1984-02-14 1985-09-03 Fuji Electric Corp Res & Dev Ltd Manufacture of thin-film solar cell
JPS60201668A (en) * 1984-03-27 1985-10-12 Agency Of Ind Science & Technol Amorphous solar cell
JPS6284568A (en) * 1985-10-08 1987-04-18 Teijin Ltd Thin-film solar cell
JPS62134981A (en) * 1985-12-06 1987-06-18 Diafoil Co Ltd Flexible amorphous silicon solar battery
JPH0432268A (en) * 1990-05-29 1992-02-04 Canon Inc Continuous manufacture of large area solar cell substrate
US5244509A (en) * 1990-08-09 1993-09-14 Canon Kabushiki Kaisha Substrate having an uneven surface for solar cell and a solar cell provided with said substrate
US5282902A (en) * 1991-05-09 1994-02-01 Canon Kabushiki Kaisha Solar cell provided with a light reflection layer
US5284525A (en) * 1990-12-13 1994-02-08 Canon Kabushiki Kaisha Solar cell
US5986205A (en) * 1996-09-05 1999-11-16 Nisshin Steel Co., Ltd. Stainless steel sheet and a substrate for a solar cell and manufacturing method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52159173U (en) * 1974-03-11 1977-12-02
JPS5323287A (en) * 1976-08-16 1978-03-03 Hiroyuki Sakaki Photoelectric converting element
JPS53120394A (en) * 1977-03-28 1978-10-20 Rca Corp Photovoltaic device
US4126150A (en) * 1977-03-28 1978-11-21 Rca Corporation Photovoltaic device having increased absorption efficiency
JPS5413587A (en) * 1977-07-04 1979-02-01 Toyo Ink Mfg Co Ltd Production of laminate
JPS5473587A (en) * 1977-11-24 1979-06-12 Sharp Corp Thin film solar battery device
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS554994A (en) * 1978-06-20 1980-01-14 Siemens Ag Solar battery and method of manufacturing same
JPS55152071U (en) * 1979-04-18 1980-11-01

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52159173U (en) * 1974-03-11 1977-12-02
JPS5323287A (en) * 1976-08-16 1978-03-03 Hiroyuki Sakaki Photoelectric converting element
JPS53120394A (en) * 1977-03-28 1978-10-20 Rca Corp Photovoltaic device
US4126150A (en) * 1977-03-28 1978-11-21 Rca Corporation Photovoltaic device having increased absorption efficiency
JPS5413587A (en) * 1977-07-04 1979-02-01 Toyo Ink Mfg Co Ltd Production of laminate
JPS5473587A (en) * 1977-11-24 1979-06-12 Sharp Corp Thin film solar battery device
JPS54141594A (en) * 1978-04-24 1979-11-02 Rca Corp Armophous silicon solar battery
JPS554994A (en) * 1978-06-20 1980-01-14 Siemens Ag Solar battery and method of manufacturing same
JPS55152071U (en) * 1979-04-18 1980-11-01

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115872A (en) * 1981-12-28 1983-07-09 Kanegafuchi Chem Ind Co Ltd Flexible photoelectromotive force generating device
US4514582A (en) * 1982-09-17 1985-04-30 Exxon Research And Engineering Co. Optical absorption enhancement in amorphous silicon deposited on rough substrate
JPS59200474A (en) * 1983-04-27 1984-11-13 Toshiba Corp Amorphous silicon thin film solar cell
JPS6094781A (en) * 1983-10-27 1985-05-27 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6095978A (en) * 1983-10-31 1985-05-29 Semiconductor Energy Lab Co Ltd Photoelectric conversion semiconductor device
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
JPS60170269A (en) * 1984-02-14 1985-09-03 Fuji Electric Corp Res & Dev Ltd Manufacture of thin-film solar cell
JPS6057680A (en) * 1984-03-21 1985-04-03 Shunpei Yamazaki Semiconductor device
JPS6057616A (en) * 1984-03-21 1985-04-03 Shunpei Yamazaki Manufacture of semiconductor device
JPS6057678A (en) * 1984-03-21 1985-04-03 Shunpei Yamazaki Fluorescent lamp battery
JPS6057679A (en) * 1984-03-21 1985-04-03 Shunpei Yamazaki Semiconductor device
JPS60201668A (en) * 1984-03-27 1985-10-12 Agency Of Ind Science & Technol Amorphous solar cell
JPS6284568A (en) * 1985-10-08 1987-04-18 Teijin Ltd Thin-film solar cell
JPS62134981A (en) * 1985-12-06 1987-06-18 Diafoil Co Ltd Flexible amorphous silicon solar battery
JPH0432268A (en) * 1990-05-29 1992-02-04 Canon Inc Continuous manufacture of large area solar cell substrate
US5244509A (en) * 1990-08-09 1993-09-14 Canon Kabushiki Kaisha Substrate having an uneven surface for solar cell and a solar cell provided with said substrate
US5284525A (en) * 1990-12-13 1994-02-08 Canon Kabushiki Kaisha Solar cell
US5282902A (en) * 1991-05-09 1994-02-01 Canon Kabushiki Kaisha Solar cell provided with a light reflection layer
US5986205A (en) * 1996-09-05 1999-11-16 Nisshin Steel Co., Ltd. Stainless steel sheet and a substrate for a solar cell and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6230506B2 (en) 1987-07-02

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