JPS56125881A - Optical semiconductor element - Google Patents

Optical semiconductor element

Info

Publication number
JPS56125881A
JPS56125881A JP2895680A JP2895680A JPS56125881A JP S56125881 A JPS56125881 A JP S56125881A JP 2895680 A JP2895680 A JP 2895680A JP 2895680 A JP2895680 A JP 2895680A JP S56125881 A JPS56125881 A JP S56125881A
Authority
JP
Japan
Prior art keywords
layer
conductive
supporter
doped
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2895680A
Other languages
Japanese (ja)
Other versions
JPS6335026B2 (en
Inventor
Akio Azuma
Yoshihiro Ono
Kazuhiro Kawajiri
Yuzo Mizobuchi
Yasusuke Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP2895680A priority Critical patent/JPS56125881A/en
Publication of JPS56125881A publication Critical patent/JPS56125881A/en
Publication of JPS6335026B2 publication Critical patent/JPS6335026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE:To prevent the formation of cracks or exfoliation without damaging photoelectric various characteristics by forming an intermediate layer consisting of an amorphous material, principal ingredients thereof are silicon and carbon, between a conductive supporter and a photoconductive layer. CONSTITUTION:A Schottky barrier type photoelectric converting element 400 has a conductive supporter 401, and the conductive supporter 401 consists of a supporter 402 and a conductive layer 403. A photoconductive intermediate layer 404 being composed of an amorphous material, principal ingredients thereof are silicon and carbon, is doped in an N type, and ohmic-contacted with the conductive layer 403. A photoconductive layer 405 consisting of amorphous silicon is not doped or doped in an N type. A metallic or inorganic compound layer 406, electrodes 407 and a reflection preventive layer 408 are formed on the photoconductive layer 405.
JP2895680A 1980-03-06 1980-03-06 Optical semiconductor element Granted JPS56125881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2895680A JPS56125881A (en) 1980-03-06 1980-03-06 Optical semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2895680A JPS56125881A (en) 1980-03-06 1980-03-06 Optical semiconductor element

Publications (2)

Publication Number Publication Date
JPS56125881A true JPS56125881A (en) 1981-10-02
JPS6335026B2 JPS6335026B2 (en) 1988-07-13

Family

ID=12262860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2895680A Granted JPS56125881A (en) 1980-03-06 1980-03-06 Optical semiconductor element

Country Status (1)

Country Link
JP (1) JPS56125881A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56161551A (en) * 1980-05-16 1981-12-11 Canon Inc Image forming member for electrophotography
JPS5721875A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
JPS5752178A (en) * 1980-09-13 1982-03-27 Canon Inc Photoconductive member
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS60189274A (en) * 1984-02-14 1985-09-26 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Method of forming photoconductive element and photoconductive element formed thereby
JPH01123247A (en) * 1987-11-06 1989-05-16 Minolta Camera Co Ltd Photosensitive body

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56161551A (en) * 1980-05-16 1981-12-11 Canon Inc Image forming member for electrophotography
JPS6161388B2 (en) * 1980-05-16 1986-12-25 Canon Kk
JPS5721875A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
JPS6322074B2 (en) * 1980-07-14 1988-05-10 Canon Kk
JPS5752178A (en) * 1980-09-13 1982-03-27 Canon Inc Photoconductive member
JPH0150905B2 (en) * 1980-09-13 1989-11-01 Canon Kk
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS6148276B2 (en) * 1980-12-03 1986-10-23 Kanegafuchi Kagaku Kogyo Kk
JPS60189274A (en) * 1984-02-14 1985-09-26 エナージー・コンバーシヨン・デバイセス・インコーポレーテツド Method of forming photoconductive element and photoconductive element formed thereby
JPH01123247A (en) * 1987-11-06 1989-05-16 Minolta Camera Co Ltd Photosensitive body

Also Published As

Publication number Publication date
JPS6335026B2 (en) 1988-07-13

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