JPS55127080A - Photoconductive element - Google Patents
Photoconductive elementInfo
- Publication number
- JPS55127080A JPS55127080A JP3587279A JP3587279A JPS55127080A JP S55127080 A JPS55127080 A JP S55127080A JP 3587279 A JP3587279 A JP 3587279A JP 3587279 A JP3587279 A JP 3587279A JP S55127080 A JPS55127080 A JP S55127080A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- glow discharge
- photoconductive element
- silicon carbide
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain such photoconductive element as is high in field resistance and voltage resistance but small in dark current by subjecting an Si compound gaseous in an inert gas atmosphere and hydrocarbon simultanuously to glow discharge decomposition to noncrystal silicon carbide containing hydrogen.
CONSTITUTION: A substrate 1 consisitng of Si single crystal, stainless steel, Al, quartz glass, etc. is covered with a conductive coat of metal oxide, and the surface is kept thoroughly clean. Next, the substrate 1 is enclosed in a glow discharge device and heated to 150∼400°C, and Ar carrier gas containing H2, a mixed gas of SiH4gaseous at room temperature and C2H are fed in the device. After that, glow discharge is generated under pressures 102∼107Torr to decompose these gases, and noncrystal silicon carbide layer 2 is grown on the substrate 1. It is then adjusted to a desired conductivity, where necessary, by adding B2H6, PH3, etc. as contents. A photoconductive element is now obtainable through fixing electrodes 3 and 4 on the layer 2.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3587279A JPS55127080A (en) | 1979-03-26 | 1979-03-26 | Photoconductive element |
US06/132,406 US4329699A (en) | 1979-03-26 | 1980-03-21 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3587279A JPS55127080A (en) | 1979-03-26 | 1979-03-26 | Photoconductive element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55127080A true JPS55127080A (en) | 1980-10-01 |
Family
ID=12454078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3587279A Pending JPS55127080A (en) | 1979-03-26 | 1979-03-26 | Photoconductive element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55127080A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662255A (en) * | 1979-10-26 | 1981-05-28 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
JPS57177147A (en) * | 1981-04-23 | 1982-10-30 | Canon Inc | Image forming member for electrophotography |
FR2523371A1 (en) * | 1982-03-10 | 1983-09-16 | Contellec Michel Le | Simplified cell for video retina - using photoconducting element in hydrogenated amorphous silicon carbide |
DE3408761A1 (en) | 1983-03-11 | 1984-09-20 | Canon K.K., Tokio/Tokyo | PHOTOSENSOR |
-
1979
- 1979-03-26 JP JP3587279A patent/JPS55127080A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662255A (en) * | 1979-10-26 | 1981-05-28 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
JPS639217B2 (en) * | 1979-10-26 | 1988-02-26 | Fuji Photo Film Co Ltd | |
JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
JPS6148276B2 (en) * | 1980-12-03 | 1986-10-23 | Kanegafuchi Kagaku Kogyo Kk | |
JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
JPS628783B2 (en) * | 1981-01-16 | 1987-02-24 | Canon Kk | |
JPS57177147A (en) * | 1981-04-23 | 1982-10-30 | Canon Inc | Image forming member for electrophotography |
JPS628785B2 (en) * | 1981-04-23 | 1987-02-24 | Canon Kk | |
FR2523371A1 (en) * | 1982-03-10 | 1983-09-16 | Contellec Michel Le | Simplified cell for video retina - using photoconducting element in hydrogenated amorphous silicon carbide |
DE3408761A1 (en) | 1983-03-11 | 1984-09-20 | Canon K.K., Tokio/Tokyo | PHOTOSENSOR |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Chittick et al. | The preparation and properties of amorphous silicon | |
Turner et al. | The chemistry of silicon in interstellar clouds | |
JPS5767020A (en) | Thin silicon film and its manufacture | |
ES344946A1 (en) | Method of conducting chemical reactions in a glow discharge | |
US4292343A (en) | Method of manufacturing semiconductor bodies composed of amorphous silicon | |
Tochitani et al. | Deposition of silicon oxide films from TEOS by low frequency plasma chemical vapor deposition | |
JPS57186321A (en) | Producing method for amorphous silicon film | |
ES2074969A6 (en) | Halogen-assisted chemical vapor deposition of diamond | |
JPS6340314A (en) | Manufacture of thin film by catalytic cvd method and device therefor | |
JPS55127080A (en) | Photoconductive element | |
US4485121A (en) | Method for producing a fluorine-containing amorphous semiconductor | |
JPS55127083A (en) | Semiconductor element | |
Jan et al. | Field effect and thermoelectric power on arsenic-doped amorphous silicon | |
Al-Dallal et al. | Infrared spectroscopy of hydrogenated silicon-sulphur alloys prepared by glow discharge | |
US4761302A (en) | Fluorination of amorphous thin-film materials with xenon fluoride | |
JPS5664346A (en) | Electrophotographic receptor and its preparation | |
Pratt et al. | On the dissociation energy of ArCO+ 2 | |
Nakamura et al. | Synthesis of amorphous films from phenylsilanes by plasma chemical vapor deposition | |
Simon et al. | Thermal dissociation of disilane: quadrupole mass spectrometry investigation | |
JPH0250969A (en) | Thin film forming device | |
JPS6262529A (en) | Forming method for silicon nitride film | |
JPS5692543A (en) | Preparation of electrophotographic receptor | |
JPS6450573A (en) | Manufacture of semiconductor radiation-ray detection element | |
GB2042488A (en) | Electrical conductor and method of making the same | |
Yagi et al. | The effects of nitrogen and plasma power on electrochemical properties of boron-doped diamond electrodes grown by MPCVD |