JPS55127080A - Photoconductive element - Google Patents

Photoconductive element

Info

Publication number
JPS55127080A
JPS55127080A JP3587279A JP3587279A JPS55127080A JP S55127080 A JPS55127080 A JP S55127080A JP 3587279 A JP3587279 A JP 3587279A JP 3587279 A JP3587279 A JP 3587279A JP S55127080 A JPS55127080 A JP S55127080A
Authority
JP
Japan
Prior art keywords
substrate
glow discharge
photoconductive element
silicon carbide
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3587279A
Other languages
Japanese (ja)
Inventor
Shinichiro Ishihara
Koshiro Mori
Tsuneo Tanaka
Seiichi Nagata
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3587279A priority Critical patent/JPS55127080A/en
Priority to US06/132,406 priority patent/US4329699A/en
Publication of JPS55127080A publication Critical patent/JPS55127080A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain such photoconductive element as is high in field resistance and voltage resistance but small in dark current by subjecting an Si compound gaseous in an inert gas atmosphere and hydrocarbon simultanuously to glow discharge decomposition to noncrystal silicon carbide containing hydrogen.
CONSTITUTION: A substrate 1 consisitng of Si single crystal, stainless steel, Al, quartz glass, etc. is covered with a conductive coat of metal oxide, and the surface is kept thoroughly clean. Next, the substrate 1 is enclosed in a glow discharge device and heated to 150∼400°C, and Ar carrier gas containing H2, a mixed gas of SiH4gaseous at room temperature and C2H are fed in the device. After that, glow discharge is generated under pressures 102∼107Torr to decompose these gases, and noncrystal silicon carbide layer 2 is grown on the substrate 1. It is then adjusted to a desired conductivity, where necessary, by adding B2H6, PH3, etc. as contents. A photoconductive element is now obtainable through fixing electrodes 3 and 4 on the layer 2.
COPYRIGHT: (C)1980,JPO&Japio
JP3587279A 1979-03-26 1979-03-26 Photoconductive element Pending JPS55127080A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3587279A JPS55127080A (en) 1979-03-26 1979-03-26 Photoconductive element
US06/132,406 US4329699A (en) 1979-03-26 1980-03-21 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3587279A JPS55127080A (en) 1979-03-26 1979-03-26 Photoconductive element

Publications (1)

Publication Number Publication Date
JPS55127080A true JPS55127080A (en) 1980-10-01

Family

ID=12454078

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3587279A Pending JPS55127080A (en) 1979-03-26 1979-03-26 Photoconductive element

Country Status (1)

Country Link
JP (1) JPS55127080A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662255A (en) * 1979-10-26 1981-05-28 Fuji Photo Film Co Ltd Electrophotographic receptor
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS57119356A (en) * 1981-01-16 1982-07-24 Canon Inc Photoconductive member
JPS57177147A (en) * 1981-04-23 1982-10-30 Canon Inc Image forming member for electrophotography
FR2523371A1 (en) * 1982-03-10 1983-09-16 Contellec Michel Le Simplified cell for video retina - using photoconducting element in hydrogenated amorphous silicon carbide
DE3408761A1 (en) 1983-03-11 1984-09-20 Canon K.K., Tokio/Tokyo PHOTOSENSOR

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662255A (en) * 1979-10-26 1981-05-28 Fuji Photo Film Co Ltd Electrophotographic receptor
JPS639217B2 (en) * 1979-10-26 1988-02-26 Fuji Photo Film Co Ltd
JPS5795677A (en) * 1980-12-03 1982-06-14 Kanegafuchi Chem Ind Co Ltd Amorphous silicon type photoelectric tranducer
JPS6148276B2 (en) * 1980-12-03 1986-10-23 Kanegafuchi Kagaku Kogyo Kk
JPS57119356A (en) * 1981-01-16 1982-07-24 Canon Inc Photoconductive member
JPS628783B2 (en) * 1981-01-16 1987-02-24 Canon Kk
JPS57177147A (en) * 1981-04-23 1982-10-30 Canon Inc Image forming member for electrophotography
JPS628785B2 (en) * 1981-04-23 1987-02-24 Canon Kk
FR2523371A1 (en) * 1982-03-10 1983-09-16 Contellec Michel Le Simplified cell for video retina - using photoconducting element in hydrogenated amorphous silicon carbide
DE3408761A1 (en) 1983-03-11 1984-09-20 Canon K.K., Tokio/Tokyo PHOTOSENSOR

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