JPS5783030A - Exposure of electron beam - Google Patents

Exposure of electron beam

Info

Publication number
JPS5783030A
JPS5783030A JP15843980A JP15843980A JPS5783030A JP S5783030 A JPS5783030 A JP S5783030A JP 15843980 A JP15843980 A JP 15843980A JP 15843980 A JP15843980 A JP 15843980A JP S5783030 A JPS5783030 A JP S5783030A
Authority
JP
Japan
Prior art keywords
rectangular
exposure
lens
slit
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15843980A
Other languages
Japanese (ja)
Other versions
JPS6229893B2 (en
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15843980A priority Critical patent/JPS5783030A/en
Publication of JPS5783030A publication Critical patent/JPS5783030A/en
Publication of JPS6229893B2 publication Critical patent/JPS6229893B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To equalize the degree of out of focus of each divided pattern as well as to perform the highly precise exposure of an electron beam by a method wherein, when a variable rectangular beam is exposed, a pattern is devided into a plurality of rectangular parts having equal longitudinal and lateral dimensions, and a rectangular beam corresponding to the rectangular shape is used. CONSTITUTION:The electron beam which was emitted from an electron beam emitter 11 is passed through the first slit 13 through the intermediary of a capacitor lens 12, and image formed on the second slit 15 through the intermediary of a lens 14. At this time, the beam is deflected by the slit deflector 16 proveded at a point close to the lens 14, and when the beam has passed through the slit 15, the rectangular beam of the desired size is obtained, and an exposure is performed on the sample surface 20 while the positon of exposure is controlled by a main deflector 19 through the intermediary of a reducing lens 17 and a projection lens 18. According to this constitution, as a rectangular data pattern is divided into a plurality of patterns having the equal longitudinal and lateral measurements, the beam size corresponding to the divided patterns is formed using the slits 13 and 15, and the desired pattern is formed with the number of exposure corresponding to the above measurements.
JP15843980A 1980-11-11 1980-11-11 Exposure of electron beam Granted JPS5783030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15843980A JPS5783030A (en) 1980-11-11 1980-11-11 Exposure of electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15843980A JPS5783030A (en) 1980-11-11 1980-11-11 Exposure of electron beam

Publications (2)

Publication Number Publication Date
JPS5783030A true JPS5783030A (en) 1982-05-24
JPS6229893B2 JPS6229893B2 (en) 1987-06-29

Family

ID=15671786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15843980A Granted JPS5783030A (en) 1980-11-11 1980-11-11 Exposure of electron beam

Country Status (1)

Country Link
JP (1) JPS5783030A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122525A (en) * 1981-01-23 1982-07-30 Nippon Telegr & Teleph Corp <Ntt> Dividing method for drawing figure in electron beam exposure apparatus
JPS57208133A (en) * 1981-06-17 1982-12-21 Jeol Ltd Electron-beam exposure method
JPS5957431A (en) * 1982-09-27 1984-04-03 Fujitsu Ltd Electron beam exposure device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5366174U (en) * 1976-11-08 1978-06-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5366174U (en) * 1976-11-08 1978-06-03

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57122525A (en) * 1981-01-23 1982-07-30 Nippon Telegr & Teleph Corp <Ntt> Dividing method for drawing figure in electron beam exposure apparatus
JPH0371765B2 (en) * 1981-01-23 1991-11-14 Nippon Denshin Denwa Kk
JPS57208133A (en) * 1981-06-17 1982-12-21 Jeol Ltd Electron-beam exposure method
JPS5957431A (en) * 1982-09-27 1984-04-03 Fujitsu Ltd Electron beam exposure device
JPH0336299B2 (en) * 1982-09-27 1991-05-31 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS6229893B2 (en) 1987-06-29

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