JPS577954A - Manufacture of hybrid integrated circuit - Google Patents

Manufacture of hybrid integrated circuit

Info

Publication number
JPS577954A
JPS577954A JP8128780A JP8128780A JPS577954A JP S577954 A JPS577954 A JP S577954A JP 8128780 A JP8128780 A JP 8128780A JP 8128780 A JP8128780 A JP 8128780A JP S577954 A JPS577954 A JP S577954A
Authority
JP
Japan
Prior art keywords
film
capacitor
resistance
etching
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8128780A
Other languages
Japanese (ja)
Inventor
Masataka Koyama
Minoru Terajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8128780A priority Critical patent/JPS577954A/en
Publication of JPS577954A publication Critical patent/JPS577954A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/702—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof
    • H01L21/707—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof of thick-or thin-film circuits or parts thereof of thin-film circuits or parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

PURPOSE:To minize resist work by a method wherein a film having a selective ctching property and an anode oxidizing property to tantalum is put between a resistance film and a capacitor film, and used as an etching stopper. CONSTITUTION:The resistance film 11 of tantalum nitride and an Al film 12 are fomed on a substrate 10, the capacitor film 13 of alpha-Ta is made up on the film 12 by means of sputtering, and these films are removed by means of etching leaving a resistance section 14 and a capacitor section 15. A section functioning as an electrode 13' of the capacitor is coated with a resist 16, the capacitor film is formed primarily and an oxide film 17 is built up, and the capacitor film 13 is removed by means of dry etching. The Al film 12 serves as the etching stopper at that time. The Al film is removed by means of etching, the capacitor film 13' is formed secondarily and an oxide film 17' is made up, and the electrodes 19, 20 of the capacitor and a resistance terminal 21 are left from a NiCr-Au film 18 on the film 17'.
JP8128780A 1980-06-18 1980-06-18 Manufacture of hybrid integrated circuit Pending JPS577954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8128780A JPS577954A (en) 1980-06-18 1980-06-18 Manufacture of hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8128780A JPS577954A (en) 1980-06-18 1980-06-18 Manufacture of hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS577954A true JPS577954A (en) 1982-01-16

Family

ID=13742154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8128780A Pending JPS577954A (en) 1980-06-18 1980-06-18 Manufacture of hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS577954A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110400741A (en) * 2019-07-25 2019-11-01 上海航天电子通讯设备研究所 A kind of preparation method of the passive Resistor-Capacitor Unit of LCP flexible base board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110400741A (en) * 2019-07-25 2019-11-01 上海航天电子通讯设备研究所 A kind of preparation method of the passive Resistor-Capacitor Unit of LCP flexible base board

Similar Documents

Publication Publication Date Title
JPS5754370A (en) Insulating gate type transistor
JPS5669864A (en) Thin-film transistor
JPS57100770A (en) Switching element
JPS577954A (en) Manufacture of hybrid integrated circuit
GB2016803A (en) Thin film transistor construction and manufacturing method of the same
JPS5570060A (en) Semiconductor device
JPS6449251A (en) Manufacture of groove-shaped capacitor
JPS5394767A (en) Manufacture of semiconductor device
JPS52146570A (en) Reverse conducting thyristor
JPS5267963A (en) Manufacture of semiconductor unit
JPS55165666A (en) Method for forming film of hybrid ic
JPS5339864A (en) Production of semiconductor element electrode
JPS526998A (en) Electrolytic film manufacture method
JPS5341986A (en) Production of semiconductor unit
JPS5561056A (en) High resistance structure of integrated circuit
JPS5593268A (en) Manufacture of semiconductor device
JPS5612770A (en) Semiconductor device and its manufacturing device
JPS5734368A (en) Protective diode for insulated gate field-effect transistor
JPS56158466A (en) Semiconductor device
JPS5286085A (en) Production of semiconductive device
JPS56133836A (en) Manufacture of oxide film on compound semiconductor surface
JPS5423375A (en) Manufacture of schottky barrier type electrode
JPS558062A (en) Manufacture of semiconductor
JPS5790969A (en) Electrostatic protective circuit for complementary-metal oxide semiconductor-integrated circuit
JPS56150864A (en) Semiconductor device