JPS5734368A - Protective diode for insulated gate field-effect transistor - Google Patents
Protective diode for insulated gate field-effect transistorInfo
- Publication number
- JPS5734368A JPS5734368A JP10945980A JP10945980A JPS5734368A JP S5734368 A JPS5734368 A JP S5734368A JP 10945980 A JP10945980 A JP 10945980A JP 10945980 A JP10945980 A JP 10945980A JP S5734368 A JPS5734368 A JP S5734368A
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- film
- circuit
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title 1
- 238000005121 nitriding Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Amplifiers (AREA)
Abstract
PURPOSE:To enable to increase a protective current as well as to obtain a low input capacity element by a method wherein a DSA type FET, consisting of a double- diffusion region and a reverse conductive region, are formed on a low density substrate and the reverse conductive region to be provided on the substrate is connected to the gate of a circuit element. CONSTITUTION:For example, the pattern of an oxide film 33 and a nitriding film 23, with which the double-diffusion region is demarcated, is formed on an N<-> substrate 13 and an N region 43 is provided using an oxide film mask 53. Then, after P regions 63 and 73 have been formed, a selective oxide layer 83 is provided using the nitriding film as a mask in such manner that the junction will be formed directly below the oxide film 33. Then, the nitriding film is removed, a gate electrode 93 contacting a region 63 is provided and grounded (to be connected to the source of FET on the circuit), and the region 73 is connected to the input gate of the circuit. As the junction capacity of the region 73 is small, input capacity can be reduced and a large current can be applied in between regions 43 and 63, thereby enabling to have the diode suitably used for a protective element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10945980A JPS5734368A (en) | 1980-08-09 | 1980-08-09 | Protective diode for insulated gate field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10945980A JPS5734368A (en) | 1980-08-09 | 1980-08-09 | Protective diode for insulated gate field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5734368A true JPS5734368A (en) | 1982-02-24 |
Family
ID=14510764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10945980A Pending JPS5734368A (en) | 1980-08-09 | 1980-08-09 | Protective diode for insulated gate field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5734368A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6414321A (en) * | 1987-07-01 | 1989-01-18 | Toray Industries | Polyester ternary conjugate fiber |
| JPH0319918A (en) * | 1989-06-03 | 1991-01-29 | Tongyang Nylon Co Ltd | Conjugate fiber for producting extra fine fiber |
-
1980
- 1980-08-09 JP JP10945980A patent/JPS5734368A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6414321A (en) * | 1987-07-01 | 1989-01-18 | Toray Industries | Polyester ternary conjugate fiber |
| JPH0319918A (en) * | 1989-06-03 | 1991-01-29 | Tongyang Nylon Co Ltd | Conjugate fiber for producting extra fine fiber |
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