JPS558062A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS558062A
JPS558062A JP8076178A JP8076178A JPS558062A JP S558062 A JPS558062 A JP S558062A JP 8076178 A JP8076178 A JP 8076178A JP 8076178 A JP8076178 A JP 8076178A JP S558062 A JPS558062 A JP S558062A
Authority
JP
Japan
Prior art keywords
film
substrate
sio2
gate
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8076178A
Other languages
Japanese (ja)
Inventor
Satoru Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8076178A priority Critical patent/JPS558062A/en
Publication of JPS558062A publication Critical patent/JPS558062A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:For avoiding the fall of the threshold value of voltage, to raise the voltage resistance between a second gate electrode and a semiconductor substrate by providing thick oxidized film in the vicinity of first and second gate oxidized gate films and to decrease the capacitors between said first and second gate electrodes. CONSTITUTION:Thick field SiO2 films 16 are formed at the both and edges of a P-type Si substrate 11, and thin SiO2 film 17 is deposited on the portion surrounded by said film 16 of said substrate 11. Next, polycrystalline Si film 18 is deposited on the whole surface of said substrate 11, and SiO2 film 19' is provided at a given place on said substrate 11. A first gate electrode 18' is formed by removing the exposed portion of said film 18 and the underlying portion of said film 17 by plasma etching with said film 19' used as mask. Next, an N-type range 20 is formed on the exposed end portion of said electrode 18' by P ion injection, said film 19' is removed, and an extension 21 of SiO2 film is formed on the remainder film portion 17'. Next, thick SiO2 film 22 is bred over the whole surface of said substrate 11, and a second gate electrode 23 is formed of polycrystalline Si thereon.
JP8076178A 1978-07-03 1978-07-03 Manufacture of semiconductor Pending JPS558062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8076178A JPS558062A (en) 1978-07-03 1978-07-03 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8076178A JPS558062A (en) 1978-07-03 1978-07-03 Manufacture of semiconductor

Publications (1)

Publication Number Publication Date
JPS558062A true JPS558062A (en) 1980-01-21

Family

ID=13727391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8076178A Pending JPS558062A (en) 1978-07-03 1978-07-03 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS558062A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144535A (en) * 1980-04-11 1981-11-10 Hitachi Ltd Manufacture of semiconductor device
JPS5889869A (en) * 1981-11-20 1983-05-28 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56144535A (en) * 1980-04-11 1981-11-10 Hitachi Ltd Manufacture of semiconductor device
JPS5889869A (en) * 1981-11-20 1983-05-28 Matsushita Electronics Corp Manufacture of semiconductor device
JPS6312389B2 (en) * 1981-11-20 1988-03-18 Matsushita Electronics Corp

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