JPS5778185A - Semiconductor photoelectric converter - Google Patents
Semiconductor photoelectric converterInfo
- Publication number
- JPS5778185A JPS5778185A JP55154357A JP15435780A JPS5778185A JP S5778185 A JPS5778185 A JP S5778185A JP 55154357 A JP55154357 A JP 55154357A JP 15435780 A JP15435780 A JP 15435780A JP S5778185 A JPS5778185 A JP S5778185A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- substrate
- electrode
- tube
- semiamorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000006243 chemical reaction Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910004014 SiF4 Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a semiconductor device having high photoelectric conversion efficiency by forming a Schottky or MIS junction parallel to the surface of a substrate on the front or back semiconductor surface of a columnar cluster structure made of semiamorphous semiconductor formed on the substrate. CONSTITUTION:The first electrode 54 is covered on a substrate 10 made of glass, stainless steel or semiconductor or the like, is contained in a reaction tube, reactive substance, e.g., SimHm or SiF4 or the like diluted with He is introduced to the tube, and the tube is heated with high frequency energy at approx. 800 deg.C. Thus, layers 53, 55, 51 each having columnar cluster in N<+> type and true and P<+> type semiamorphous structure are laminated and grown on the electrode 54, and lattice- shaped electrode 52 is mounted on the uppermost layer 51. Thereafter, light 456 is incident to the layer 51 side, and electrons and holes produced on the light emitted surface are produced from the electrodes 52, 54. In this manner, the photoelectric conversion efficiency can be improved in the elemen to 7-12%, and can be largely improved as compared with the junction of not cluster structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55154357A JPS5778185A (en) | 1980-11-01 | 1980-11-01 | Semiconductor photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55154357A JPS5778185A (en) | 1980-11-01 | 1980-11-01 | Semiconductor photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5778185A true JPS5778185A (en) | 1982-05-15 |
Family
ID=15582383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55154357A Pending JPS5778185A (en) | 1980-11-01 | 1980-11-01 | Semiconductor photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5778185A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210661A (en) * | 1982-05-15 | 1983-12-07 | ザ・ブリテイツシユ・ピトロ−リアム・コンパニ−・ピ−・エル・シ− | Memory device |
| JPH04190329A (en) * | 1990-11-26 | 1992-07-08 | Semiconductor Energy Lab Co Ltd | Display device |
| JP2001358350A (en) * | 2000-06-12 | 2001-12-26 | Canon Inc | Photovoltaic element |
| US6369788B1 (en) | 1990-11-26 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| USRE39393E1 (en) | 1990-11-30 | 2006-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Device for reading an image having a common semiconductor layer |
-
1980
- 1980-11-01 JP JP55154357A patent/JPS5778185A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58210661A (en) * | 1982-05-15 | 1983-12-07 | ザ・ブリテイツシユ・ピトロ−リアム・コンパニ−・ピ−・エル・シ− | Memory device |
| US7462515B2 (en) | 1990-11-13 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| JPH04190329A (en) * | 1990-11-26 | 1992-07-08 | Semiconductor Energy Lab Co Ltd | Display device |
| US6369788B1 (en) | 1990-11-26 | 2002-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| US6893906B2 (en) | 1990-11-26 | 2005-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and driving method for the same |
| USRE39393E1 (en) | 1990-11-30 | 2006-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Device for reading an image having a common semiconductor layer |
| JP2001358350A (en) * | 2000-06-12 | 2001-12-26 | Canon Inc | Photovoltaic element |
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