JPS5778185A - Semiconductor photoelectric converter - Google Patents

Semiconductor photoelectric converter

Info

Publication number
JPS5778185A
JPS5778185A JP55154357A JP15435780A JPS5778185A JP S5778185 A JPS5778185 A JP S5778185A JP 55154357 A JP55154357 A JP 55154357A JP 15435780 A JP15435780 A JP 15435780A JP S5778185 A JPS5778185 A JP S5778185A
Authority
JP
Japan
Prior art keywords
semiconductor
substrate
electrode
tube
semiamorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55154357A
Other languages
English (en)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Original Assignee
HANDOUTAI ENERUGII KENKYUSHO KK
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI ENERUGII KENKYUSHO KK, Semiconductor Energy Laboratory Co Ltd filed Critical HANDOUTAI ENERUGII KENKYUSHO KK
Priority to JP55154357A priority Critical patent/JPS5778185A/ja
Publication of JPS5778185A publication Critical patent/JPS5778185A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP55154357A 1980-11-01 1980-11-01 Semiconductor photoelectric converter Pending JPS5778185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55154357A JPS5778185A (en) 1980-11-01 1980-11-01 Semiconductor photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55154357A JPS5778185A (en) 1980-11-01 1980-11-01 Semiconductor photoelectric converter

Publications (1)

Publication Number Publication Date
JPS5778185A true JPS5778185A (en) 1982-05-15

Family

ID=15582383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55154357A Pending JPS5778185A (en) 1980-11-01 1980-11-01 Semiconductor photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5778185A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210661A (ja) * 1982-05-15 1983-12-07 ザ・ブリテイツシユ・ピトロ−リアム・コンパニ−・ピ−・エル・シ− 記憶デバイス
JPH04190329A (ja) * 1990-11-26 1992-07-08 Semiconductor Energy Lab Co Ltd 表示装置
JP2001358350A (ja) * 2000-06-12 2001-12-26 Canon Inc 光起電力素子
US6369788B1 (en) 1990-11-26 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
USRE39393E1 (en) 1990-11-30 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Device for reading an image having a common semiconductor layer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58210661A (ja) * 1982-05-15 1983-12-07 ザ・ブリテイツシユ・ピトロ−リアム・コンパニ−・ピ−・エル・シ− 記憶デバイス
US7462515B2 (en) 1990-11-13 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
JPH04190329A (ja) * 1990-11-26 1992-07-08 Semiconductor Energy Lab Co Ltd 表示装置
US6369788B1 (en) 1990-11-26 2002-04-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
USRE39393E1 (en) 1990-11-30 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Device for reading an image having a common semiconductor layer
JP2001358350A (ja) * 2000-06-12 2001-12-26 Canon Inc 光起電力素子

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