JPS61203665A - Production of amorphous silicon-type photo-diode - Google Patents
Production of amorphous silicon-type photo-diodeInfo
- Publication number
- JPS61203665A JPS61203665A JP60045084A JP4508485A JPS61203665A JP S61203665 A JPS61203665 A JP S61203665A JP 60045084 A JP60045084 A JP 60045084A JP 4508485 A JP4508485 A JP 4508485A JP S61203665 A JPS61203665 A JP S61203665A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous silicon
- diode
- photo
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 27
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910000077 silane Inorganic materials 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract 2
- 239000010703 silicon Substances 0.000 claims abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract description 2
- 230000010748 Photoabsorption Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、アモルファスシリコンの製造方法に係わり、
特にｐｉｎ型フォトダイオードの１層の形成方法に関す
るものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing amorphous silicon,
In particular, it relates to a method of forming one layer of a pin-type photodiode.
近時、ファクシミリや太陽電池の普及により、光センサ
としてアモルファスシリコンが広範囲に利用されている
。Recently, with the spread of facsimiles and solar cells, amorphous silicon has been widely used as optical sensors.
従来、これらの用途に使用されるアモルファスシリコン
を生成するためには、高次シラン系ガスのグロー放電分
解法（プラズマＣＶＤ法）により行われ、このように生
成されたアモルファスシリコンは、例えば基板の表面に
順次アンドープのアモルファスシリコン層（ｉ −ａ−
３ｉ）、ｎ”アモルファスシリコン層（ｎ”−ａ−３ｉ
）のショットキ型と、ｐ＋アモルファスシリコン層（ｐ
”−ａ−３ｉ）、アンドープのアモルファスシリコン層
、ｎ＋アモルファスシリコン層のｐ−１−ｎ型が積層さ
れるのが普通である。Conventionally, amorphous silicon used in these applications has been produced by a glow discharge decomposition method (plasma CVD method) of high-order silane-based gas, and the amorphous silicon produced in this way is, for example, An undoped amorphous silicon layer (i-a-
3i), n” amorphous silicon layer (n”-a-3i
) Schottky type and p+ amorphous silicon layer (p
"-a-3i), an undoped amorphous silicon layer, and a p-1-n type n+ amorphous silicon layer are usually stacked.
然しなから、このような構造では、フォトダイオードに
応用した際に、順方向バイアス下でアモルファスシリコ
ンが高抵抗になって、順方向の電流が少なくなって感度
が低下し、太陽電池に使用される場合には、低エネルギ
ーの光を有効に吸収できないという欠点があるために、
その改善が要望されている。However, when such a structure is applied to a photodiode, the amorphous silicon has a high resistance under forward bias, which reduces the forward current and reduces sensitivity, making it difficult to use in solar cells. In this case, it has the disadvantage that it cannot effectively absorb low-energy light.
Improvements are requested.
第５図は、従来のアモルファスシリコンを使用したフォ
トダイオードの構造を示す要部断面図を示している。FIG. 5 shows a cross-sectional view of essential parts showing the structure of a conventional photodiode using amorphous silicon.
ガラス基板１があって、その表面に光を透過する透明膜
の下部電極２として例えば酸化錫又はインジウム錫の酸
化物（ＩＴＯ）等が形成され、順次ｐ”−ａ−３ｉ層３
．１−ａ−３ｉ層４、ｎ＋−ａ−３ｉ層５、及び上部電
極６が積層されている。There is a glass substrate 1, on the surface of which a transparent film such as tin oxide or indium tin oxide (ITO) is formed as a lower electrode 2 of a transparent film, and then a p''-a-3i layer 3 is formed.
．． A 1-a-3i layer 4, an n+-a-3i layer 5, and an upper electrode 6 are stacked.
このような積層がなされたａ−Ｓｉ型フォトダイオード
では、ａ−３ｔＯ順方向の抵抗が大きく、例えば１０９
Ωｃｏｗ程度の高抵抗になって光センサとしての感度が
低下する欠点がある。In an a-Si type photodiode with such a stack, the forward resistance of a-3tO is large, for example, 109
It has a drawback that the resistance as high as Ωcow decreases the sensitivity as an optical sensor.
第６図は、従来微結晶シリコン（マイクロクリスタリン
シリコンシリコン、以下ｐ ｃ −Ｓ ｉという）を使
用している太陽電池の構造を示す要部断面図であって、
第５図の最上層のｎ“−ａ−３ｉ層５に相当する部分が
、微結晶シリコン７である以外は第５図と同様であり、
この場合には通常のａ−３３のエネルギーギャップが１
．６ ｅＶ程度であるために、１．６ｅＶ以下の光エネ
ルギーが太陽電池に照射されても、太陽電池にエネルギ
ーが吸収されないという欠点がある。FIG. 6 is a sectional view of main parts showing the structure of a solar cell that conventionally uses microcrystalline silicon (hereinafter referred to as PC-Si),
It is the same as that in FIG. 5 except that the portion corresponding to the uppermost n"-a-3i layer 5 in FIG. 5 is microcrystalline silicon 7,
In this case, the energy gap of normal a-33 is 1
．． Since it is about 6 eV, there is a drawback that even if the solar cell is irradiated with light energy of 1.6 eV or less, the energy is not absorbed by the solar cell.
上記のアモルファスシリコンの構造では、太陽電池やフ
ォトダイオードに使用する際に、アモルファスシリコン
の順方向の抵抗が大きいとか、照射光の低エネルギー帯
が吸収できないということが問題点である。The above structure of amorphous silicon has problems when used in solar cells and photodiodes, such as the large forward resistance of amorphous silicon and the inability to absorb the low energy band of irradiated light.
本発明は、上記問題点を解消したアモルファスシリコン
の製造方法を提供するもので、その手段は、ｐｉｎ型フ
ォトダイオードの１層を、非ドープ状態の微結晶化シリ
コンと非ドープ状態のアモルファスシリコンとを高次シ
ランガス系のプラズマＣＶＤ法により、連続的に積層し
て成膜したアモルファスシリコン型フォトダイオードの
製造方法によって達成できる。The present invention provides a method for manufacturing amorphous silicon that solves the above-mentioned problems. This can be achieved by a method of manufacturing an amorphous silicon type photodiode in which films are continuously laminated using a high-order silane gas-based plasma CVD method.
本発明は、アモルファスシリコンを使用した太陽電池や
、フォトダイオードで、光の低エネルギー帯を吸収し、
又フォトダイオードでは、順方向の抵抗を小にするため
に、ａ−５ｉ層のオーミック電極側に、μｃ−ｓｉＪｉ
＃をプラズマＣＶＤ法により形成することで、μｃ−３
ｉ層そのものが直列抵抗を減少させ、且つμｃ−３ｉの
光エネルギーの吸収帯域が広くなって、低エネルギー領
域まで吸収することが可能になり、順方向のバイアス暗
電流の増加、光生成キャリアの増加を可能にしたもので
ある。The present invention uses a solar cell or photodiode that uses amorphous silicon to absorb the low energy band of light.
In addition, in the photodiode, in order to reduce the forward resistance, μc-siJi is placed on the ohmic electrode side of the a-5i layer.
By forming # by plasma CVD method, μc-3
The i-layer itself reduces the series resistance, and the optical energy absorption band of μc-3i becomes wider, making it possible to absorb up to the low energy region, increasing the forward bias dark current and increasing the amount of photogenerated carriers. This is what made the increase possible.
第１図は、本発明の一実施例であるフォトダイオード素
子構造の要部断面図である。FIG. 1 is a sectional view of a main part of a photodiode element structure according to an embodiment of the present invention.
フォトダイオードであるので、光の透過をするガラス基
板１１の表面に、酸化錫又はＩＴＯ膜である透明電極１
２を１０００人の厚みで形成し、その表面から、順次ｐ
”−ａ−３ｔ又はｐ＋−μｃ−３ｉ層１３と、その表面
に１−ａｓｉ１４を厚みが３０００人で形成し、次にｉ
−μｃ−３ｉ層１５を厚みが４゜００人、更にｎ” −
ａ−８ｉ層１６を厚みが１０００人で形成した後、オー
ミック電極１７を厚みが３００人で形成したものである
。Since it is a photodiode, a transparent electrode 1 made of tin oxide or ITO is placed on the surface of a glass substrate 11 that transmits light.
2 with a thickness of 1000 people, and from the surface, p
"-a-3t or p+-μc-3i layer 13 and 1-asi14 is formed on its surface to a thickness of 3000, and then i
- The thickness of the μc-3i layer 15 is 4゜00, and further n" -
After forming the a-8i layer 16 with a thickness of 1000 layers, the ohmic electrode 17 was formed with a thickness of 300 layers.
第２図は、主に太陽電池などに使用されるフォトダイオ
ードの断面図であって、ガラス基板２１上にショットキ
ー金属２２として例えば白金を１００人の厚みで形成し
てから、第１図と同様な積層を行うもので、その表面か
ら順次１−ａ−３ｉ層２３、ｉ ＩＪｃ−３ｉ層２４
、ｎ” −ｐｃ−３ｉ層２５及びオーミック電極２６を
形成したものである。FIG. 2 is a cross-sectional view of a photodiode mainly used in solar cells, etc. After forming, for example, platinum as a Schottky metal 22 on a glass substrate 21 to a thickness of 100 mm, the photodiode shown in FIG. The layer is laminated in a similar manner, and the 1-a-3i layer 23 and the i IJc-3i layer 24 are sequentially formed from the surface.
, an n''-pc-3i layer 25 and an ohmic electrode 26.
第３図は上記のアモルファスシリコン層構造と原理的に
同様のフォトダイオードの断面図であって、基板に安価
な金属板としてステンレス鋼を用いた例であり、積層条
件として、ステンレス鋼基板３１０表面に、順次ｎ”−
Ｃα−ｓｉ層３２を１０００人、ｉ−ｃα−３ｉ層３３
を４０００人、ｉ −ａ−３ｉ層３４を３０００人、ｐ
”−ｃｔｘ−５ｉ層３５を１０００人、又はｐ”−ａ−
３ｉ層を１００人の厚みで形成して、最上層に透明電極
３６を形成したものであって、この場合に光は透明電極
側から入射される。FIG. 3 is a cross-sectional view of a photodiode which is similar in principle to the amorphous silicon layer structure described above, and is an example in which stainless steel is used as an inexpensive metal plate for the substrate. , sequentially n”-
1000 Cα-si layer 32, 1000 i-cα-3i layer 33
4,000 people, i-a-3i layer 34 3,000 people, p
"-ctx-5i layer 35 for 1000 people, or p"-a-
A 3i layer is formed to a thickness of 100 layers, and a transparent electrode 36 is formed on the top layer, and in this case, light is incident from the transparent electrode side.
第４図は、太陽電池に使用されるアモルファスシリコン
層構造にステンレス鋼を用いた例の断面図であり、ステ
ンレス鋼基Ｆｉ４１の表面に、順次、ｎ”−ｃｃｘ−Ｓ
ｉ層４２、ｉ−ｃα−３ｉ層４３．１−ａ−３ｉ層４４
を形成して、最上層にショッｌ−キー金属４５を被着し
たものであり、光はショットキー金属側から入射される
。FIG. 4 is a cross-sectional view of an example in which stainless steel is used for the amorphous silicon layer structure used in solar cells.
i layer 42, i-cα-3i layer 43.1-a-3i layer 44
is formed, and a Schottky metal 45 is coated on the top layer, and light is incident from the Schottky metal side.
本発明による、ｉ−μｃ−３ｉ層を用いたフォトダイオ
ードは整流性が向上すると共に、低エネルギー領域にお
ける光吸収効率が増加することになり、高性能の光ダイ
オードを製造することが可能になる。The photodiode using the i-μc-3i layer according to the present invention has improved rectification and light absorption efficiency in the low energy region, making it possible to manufacture a high-performance photodiode. .
以上、詳細に説明したように、本発明のアモルファスシ
リコンで製造されたフォトダイオードは、高性能の光特
性を有し、このフォトダイオードを太陽電池やファクシ
ミリのイメージセンナ使用することにより、高品質の装
置を供し得るという効果大なるものがある。As explained above in detail, the photodiode manufactured using the amorphous silicon of the present invention has high-performance optical characteristics, and by using this photodiode in solar cells and facsimile image sensors, high-quality There is a great effect in that the device can be provided.
第１図は、本発明の一実施例であるアモルファスシリコ
ンを使用したフォトダイオード構造の要部断面図、
第２図、第３図、第４図は本発明の他の実施例であるフ
ォトダイオードの断面図、
第５図、第６図は、従来のアモルファスシリコンを使用
したフォトダイオードの構造を示す要部断面図、
図において、
１１はガラス基板、 １２は透明電極、１３はｐ”
−ａ−３ｉ又はｐ”−ｐｃ−３ｉ１４は１−ａ−３ｉ層
１５は１−ｐｃ−３ｉ層、
１６はｎ＋−ｐｃ−３ｉｌｉ、
１７はオーミック電掘、
２２はショットキー金属、
をそれぞれ示している。
第１閃 第２ＦｙＪ
第３因 第４閃FIG. 1 is a cross-sectional view of a main part of a photodiode structure using amorphous silicon, which is one embodiment of the present invention, and FIGS. 2, 3, and 4 are photodiodes, which are other embodiments of the present invention. 5 and 6 are cross-sectional views of main parts showing the structure of a conventional photodiode using amorphous silicon. In the figures, 11 is a glass substrate, 12 is a transparent electrode, and 13 is a p"
-a-3i or p"-pc-3i 14 indicates 1-a-3i layer 15 indicates 1-pc-3i layer, 16 indicates n+-pc-3ili, 17 indicates ohmic electroplating, and 22 indicates Schottky metal, respectively. 1st flash 2nd FyJ 3rd cause 4th flash
Claims (1)
結晶化シリコンと非ドープ状態のアモルファスシリコン
とをシラン系ガスのプラズマＣＶＤ法により、連続的に
積層して成膜したことを特徴とするアモルファスシリコ
ン型フォトダイオードの製造方法。An amorphous film characterized in that the i-layer of a pin-type photodiode is formed by successively stacking undoped microcrystalline silicon and undoped amorphous silicon by a plasma CVD method using a silane-based gas. A method of manufacturing a silicon photodiode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60045084A JPS61203665A (en) | 1985-03-06 | 1985-03-06 | Production of amorphous silicon-type photo-diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60045084A JPS61203665A (en) | 1985-03-06 | 1985-03-06 | Production of amorphous silicon-type photo-diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61203665A true JPS61203665A (en) | 1986-09-09 |
Family
ID=12709454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60045084A Pending JPS61203665A (en) | 1985-03-06 | 1985-03-06 | Production of amorphous silicon-type photo-diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61203665A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02246171A (en) * | 1989-03-17 | 1990-10-01 | Sanyo Electric Co Ltd | Optoelectric transducer |
| FR2650916A1 (en) * | 1989-08-09 | 1991-02-15 | Sanyo Electric Co | PHOTOVOLTAIC DEVICE |
| JP2010034525A (en) * | 2008-06-25 | 2010-02-12 | Fuji Electric Holdings Co Ltd | Thin-film solar cell |
| JP2010087332A (en) * | 2008-10-01 | 2010-04-15 | Seiko Epson Corp | Photoelectric conversion element, photoelectric conversion device, and image sensor |
| JPWO2009110403A1 (en) * | 2008-03-07 | 2011-07-14 | 国立大学法人東北大学 | Photoelectric conversion element structure and solar cell |
-
1985
- 1985-03-06 JP JP60045084A patent/JPS61203665A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02246171A (en) * | 1989-03-17 | 1990-10-01 | Sanyo Electric Co Ltd | Optoelectric transducer |
| FR2650916A1 (en) * | 1989-08-09 | 1991-02-15 | Sanyo Electric Co | PHOTOVOLTAIC DEVICE |
| JPWO2009110403A1 (en) * | 2008-03-07 | 2011-07-14 | 国立大学法人東北大学 | Photoelectric conversion element structure and solar cell |
| JP2010034525A (en) * | 2008-06-25 | 2010-02-12 | Fuji Electric Holdings Co Ltd | Thin-film solar cell |
| JP2010087332A (en) * | 2008-10-01 | 2010-04-15 | Seiko Epson Corp | Photoelectric conversion element, photoelectric conversion device, and image sensor |
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