JPS5763867A - Compound semiconductor avalanche diode - Google Patents

Compound semiconductor avalanche diode

Info

Publication number
JPS5763867A
JPS5763867A JP55139022A JP13902280A JPS5763867A JP S5763867 A JPS5763867 A JP S5763867A JP 55139022 A JP55139022 A JP 55139022A JP 13902280 A JP13902280 A JP 13902280A JP S5763867 A JPS5763867 A JP S5763867A
Authority
JP
Japan
Prior art keywords
layer
band gap
type inp
compound semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55139022A
Other languages
Japanese (ja)
Inventor
Nobuhiko Susa
Hiroaki Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55139022A priority Critical patent/JPS5763867A/en
Publication of JPS5763867A publication Critical patent/JPS5763867A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To avoid the occurrence of an edge breakdown, by using a photodiode constructed with a compound semiconductor layer. CONSTITUTION:An N type InP layer 22 having a larger band gap than the energy band gap Eg1 of an InGaAs layer 21 is formed on said InGaAs layer 21 having carrier concentration of 10<15>-10<16>/cm<3>. Further, on said N type InP layer 22, an N type InP layer 22 having a larger band gap than Eg1 is provided, and a P<+> region 25 having carriers over 10<18>/cm<3> and an insulating layer 28 are provided within the semiconductor layers 22, 23. At that time, the semiconductor layer 21 constructs an optical absorption layer absorbing light 29 entering through the region 25 and the semiconductor layer 22 and the semiconductor layer 22 forms a layer that includes the layer 23 and causes the avalanche multiplication. The breakdown voltage at a PN junction 31 is nearly 80-90v, and avalanche breakdown voltage at the layer 23 is 40-50V, thus the edge breakdown is avoidable.
JP55139022A 1980-10-04 1980-10-04 Compound semiconductor avalanche diode Pending JPS5763867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55139022A JPS5763867A (en) 1980-10-04 1980-10-04 Compound semiconductor avalanche diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55139022A JPS5763867A (en) 1980-10-04 1980-10-04 Compound semiconductor avalanche diode

Publications (1)

Publication Number Publication Date
JPS5763867A true JPS5763867A (en) 1982-04-17

Family

ID=15235640

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55139022A Pending JPS5763867A (en) 1980-10-04 1980-10-04 Compound semiconductor avalanche diode

Country Status (1)

Country Link
JP (1) JPS5763867A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0076495A2 (en) * 1981-10-02 1983-04-13 Hitachi, Ltd. Photodiode
JPS611064A (en) * 1984-05-31 1986-01-07 Fujitsu Ltd Semiconductor photodetector
JPS61267376A (en) * 1985-05-21 1986-11-26 Nec Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0076495A2 (en) * 1981-10-02 1983-04-13 Hitachi, Ltd. Photodiode
US4740819A (en) * 1981-10-02 1988-04-26 Hitachi, Ltd. Photo semiconductor device
JPS611064A (en) * 1984-05-31 1986-01-07 Fujitsu Ltd Semiconductor photodetector
JPS61267376A (en) * 1985-05-21 1986-11-26 Nec Corp Semiconductor device

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