FR2406895A1 - Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate - Google Patents

Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate

Info

Publication number
FR2406895A1
FR2406895A1 FR7731275A FR7731275A FR2406895A1 FR 2406895 A1 FR2406895 A1 FR 2406895A1 FR 7731275 A FR7731275 A FR 7731275A FR 7731275 A FR7731275 A FR 7731275A FR 2406895 A1 FR2406895 A1 FR 2406895A1
Authority
FR
France
Prior art keywords
layers
avalanche photodiode
homo
phosphide
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7731275A
Other languages
French (fr)
Other versions
FR2406895B1 (en
Inventor
Thomas Pearsall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7731275A priority Critical patent/FR2406895A1/en
Publication of FR2406895A1 publication Critical patent/FR2406895A1/en
Application granted granted Critical
Publication of FR2406895B1 publication Critical patent/FR2406895B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

Avalanche photodiode of the homojunction type has a semiconducting junction consisting of two layers of GayIn1-yAsxP1-x where x is approx. 2y and 0.1 = x =1 and 0.05 = y =0.48, the two layers having opposite types of conductivity. In two specific embodiments x = 1 and y is 0.46-0.48, and x = 0.4-0.5 and y = 0.2-0.25. Diode possess small dark current, high detection current, high avalanche gain, uniform response in the frequency band of luminous radiation, rapid response. The diodes have these properties esp. where operating at optical wavelengths >1 mu.
FR7731275A 1977-10-18 1977-10-18 Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate Granted FR2406895A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7731275A FR2406895A1 (en) 1977-10-18 1977-10-18 Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7731275A FR2406895A1 (en) 1977-10-18 1977-10-18 Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate

Publications (2)

Publication Number Publication Date
FR2406895A1 true FR2406895A1 (en) 1979-05-18
FR2406895B1 FR2406895B1 (en) 1982-10-22

Family

ID=9196619

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7731275A Granted FR2406895A1 (en) 1977-10-18 1977-10-18 Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate

Country Status (1)

Country Link
FR (1) FR2406895A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4382265A (en) * 1979-01-26 1983-05-03 Thomson-Csf Heterojunction semiconductor device
EP0265642A2 (en) * 1986-09-13 1988-05-04 Alcatel SEL Aktiengesellschaft Avalanche photodiode
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3821777A (en) * 1972-09-22 1974-06-28 Varian Associates Avalanche photodiode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV320/75 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4382265A (en) * 1979-01-26 1983-05-03 Thomson-Csf Heterojunction semiconductor device
EP0265642A2 (en) * 1986-09-13 1988-05-04 Alcatel SEL Aktiengesellschaft Avalanche photodiode
EP0265642A3 (en) * 1986-09-13 1989-07-26 Standard Elektrik Lorenz Aktiengesellschaft Avalanche photodiode
US5179430A (en) * 1988-05-24 1993-01-12 Nec Corporation Planar type heterojunction avalanche photodiode

Also Published As

Publication number Publication date
FR2406895B1 (en) 1982-10-22

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Legal Events

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