FR2406895A1 - Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate - Google Patents
Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrateInfo
- Publication number
- FR2406895A1 FR2406895A1 FR7731275A FR7731275A FR2406895A1 FR 2406895 A1 FR2406895 A1 FR 2406895A1 FR 7731275 A FR7731275 A FR 7731275A FR 7731275 A FR7731275 A FR 7731275A FR 2406895 A1 FR2406895 A1 FR 2406895A1
- Authority
- FR
- France
- Prior art keywords
- layers
- avalanche photodiode
- homo
- phosphide
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 238000001514 detection method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Avalanche photodiode of the homojunction type has a semiconducting junction consisting of two layers of GayIn1-yAsxP1-x where x is approx. 2y and 0.1 = x =1 and 0.05 = y =0.48, the two layers having opposite types of conductivity. In two specific embodiments x = 1 and y is 0.46-0.48, and x = 0.4-0.5 and y = 0.2-0.25. Diode possess small dark current, high detection current, high avalanche gain, uniform response in the frequency band of luminous radiation, rapid response. The diodes have these properties esp. where operating at optical wavelengths >1 mu.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7731275A FR2406895A1 (en) | 1977-10-18 | 1977-10-18 | Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7731275A FR2406895A1 (en) | 1977-10-18 | 1977-10-18 | Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2406895A1 true FR2406895A1 (en) | 1979-05-18 |
FR2406895B1 FR2406895B1 (en) | 1982-10-22 |
Family
ID=9196619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7731275A Granted FR2406895A1 (en) | 1977-10-18 | 1977-10-18 | Avalanche photodiode of the homo:junction type - based on gallium indium arsenide phosphide layers on an indium phosphide substrate |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2406895A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4382265A (en) * | 1979-01-26 | 1983-05-03 | Thomson-Csf | Heterojunction semiconductor device |
EP0265642A2 (en) * | 1986-09-13 | 1988-05-04 | Alcatel SEL Aktiengesellschaft | Avalanche photodiode |
US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3821777A (en) * | 1972-09-22 | 1974-06-28 | Varian Associates | Avalanche photodiode |
-
1977
- 1977-10-18 FR FR7731275A patent/FR2406895A1/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3821777A (en) * | 1972-09-22 | 1974-06-28 | Varian Associates | Avalanche photodiode |
Non-Patent Citations (1)
Title |
---|
NV320/75 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4382265A (en) * | 1979-01-26 | 1983-05-03 | Thomson-Csf | Heterojunction semiconductor device |
EP0265642A2 (en) * | 1986-09-13 | 1988-05-04 | Alcatel SEL Aktiengesellschaft | Avalanche photodiode |
EP0265642A3 (en) * | 1986-09-13 | 1989-07-26 | Standard Elektrik Lorenz Aktiengesellschaft | Avalanche photodiode |
US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
Also Published As
Publication number | Publication date |
---|---|
FR2406895B1 (en) | 1982-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |