JPS5728387A - Semiconductor optical element - Google Patents
Semiconductor optical elementInfo
- Publication number
- JPS5728387A JPS5728387A JP10342380A JP10342380A JPS5728387A JP S5728387 A JPS5728387 A JP S5728387A JP 10342380 A JP10342380 A JP 10342380A JP 10342380 A JP10342380 A JP 10342380A JP S5728387 A JPS5728387 A JP S5728387A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- quarternary
- window
- light
- optical element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a complete grating coupling on a substrate by constituting a window layer or a clad layer by AlxGa1-xAsySb1-y when a quarternarly layer of In1-uGauAs1-vPv is used as a light absorption layer of the optical element or an active layer with heterostructure and the window layer or the clad layer is formed on the quarternary layer. CONSTITUTION:The quarternary layer of the In1-uGauAs1-vPv with an Eg1 energy gap is grown on the n<+> type InP substrate 1 as the light absorption layer 2, and the quarternary window layer 11 consisting of AlxGa1-xAsySb1-y, which has an Eg2 energy gap larger than the layer 2 and a lattice constant thereof agrees, is grown on the quarternary layer. When the element is constituted in this manner and light hnu that energy satisfied Eg1<hnu<Eg2 is irradiated, light transmits to the layer 11, and is absorbed to the layer 2, but quantum efficiency is improved largely because the recombination of carriers can hardly be ignored on a semiconductor interface, lattices thereof are matched.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10342380A JPS5728387A (en) | 1980-07-28 | 1980-07-28 | Semiconductor optical element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10342380A JPS5728387A (en) | 1980-07-28 | 1980-07-28 | Semiconductor optical element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5728387A true JPS5728387A (en) | 1982-02-16 |
Family
ID=14353623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10342380A Pending JPS5728387A (en) | 1980-07-28 | 1980-07-28 | Semiconductor optical element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5728387A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05345682A (en) * | 1992-06-15 | 1993-12-27 | Kurosaki Refract Co Ltd | Chromium based flame spraying material |
WO2009071916A1 (en) * | 2007-12-06 | 2009-06-11 | The University Of Sheffield | Infrared avalanche photodiode structure with low excess noise and its manufacturing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4971885A (en) * | 1973-09-21 | 1974-07-11 | ||
JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
-
1980
- 1980-07-28 JP JP10342380A patent/JPS5728387A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4971885A (en) * | 1973-09-21 | 1974-07-11 | ||
JPS5320881A (en) * | 1976-08-11 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | Photo semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05345682A (en) * | 1992-06-15 | 1993-12-27 | Kurosaki Refract Co Ltd | Chromium based flame spraying material |
WO2009071916A1 (en) * | 2007-12-06 | 2009-06-11 | The University Of Sheffield | Infrared avalanche photodiode structure with low excess noise and its manufacturing method |
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