JPS5728387A - Semiconductor optical element - Google Patents

Semiconductor optical element

Info

Publication number
JPS5728387A
JPS5728387A JP10342380A JP10342380A JPS5728387A JP S5728387 A JPS5728387 A JP S5728387A JP 10342380 A JP10342380 A JP 10342380A JP 10342380 A JP10342380 A JP 10342380A JP S5728387 A JPS5728387 A JP S5728387A
Authority
JP
Japan
Prior art keywords
layer
quarternary
window
light
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10342380A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10342380A priority Critical patent/JPS5728387A/en
Publication of JPS5728387A publication Critical patent/JPS5728387A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a complete grating coupling on a substrate by constituting a window layer or a clad layer by AlxGa1-xAsySb1-y when a quarternarly layer of In1-uGauAs1-vPv is used as a light absorption layer of the optical element or an active layer with heterostructure and the window layer or the clad layer is formed on the quarternary layer. CONSTITUTION:The quarternary layer of the In1-uGauAs1-vPv with an Eg1 energy gap is grown on the n<+> type InP substrate 1 as the light absorption layer 2, and the quarternary window layer 11 consisting of AlxGa1-xAsySb1-y, which has an Eg2 energy gap larger than the layer 2 and a lattice constant thereof agrees, is grown on the quarternary layer. When the element is constituted in this manner and light hnu that energy satisfied Eg1<hnu<Eg2 is irradiated, light transmits to the layer 11, and is absorbed to the layer 2, but quantum efficiency is improved largely because the recombination of carriers can hardly be ignored on a semiconductor interface, lattices thereof are matched.
JP10342380A 1980-07-28 1980-07-28 Semiconductor optical element Pending JPS5728387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10342380A JPS5728387A (en) 1980-07-28 1980-07-28 Semiconductor optical element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10342380A JPS5728387A (en) 1980-07-28 1980-07-28 Semiconductor optical element

Publications (1)

Publication Number Publication Date
JPS5728387A true JPS5728387A (en) 1982-02-16

Family

ID=14353623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10342380A Pending JPS5728387A (en) 1980-07-28 1980-07-28 Semiconductor optical element

Country Status (1)

Country Link
JP (1) JPS5728387A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05345682A (en) * 1992-06-15 1993-12-27 Kurosaki Refract Co Ltd Chromium based flame spraying material
WO2009071916A1 (en) * 2007-12-06 2009-06-11 The University Of Sheffield Infrared avalanche photodiode structure with low excess noise and its manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971885A (en) * 1973-09-21 1974-07-11
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971885A (en) * 1973-09-21 1974-07-11
JPS5320881A (en) * 1976-08-11 1978-02-25 Nippon Telegr & Teleph Corp <Ntt> Photo semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05345682A (en) * 1992-06-15 1993-12-27 Kurosaki Refract Co Ltd Chromium based flame spraying material
WO2009071916A1 (en) * 2007-12-06 2009-06-11 The University Of Sheffield Infrared avalanche photodiode structure with low excess noise and its manufacturing method

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