JPS5728374A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JPS5728374A JPS5728374A JP10303680A JP10303680A JPS5728374A JP S5728374 A JPS5728374 A JP S5728374A JP 10303680 A JP10303680 A JP 10303680A JP 10303680 A JP10303680 A JP 10303680A JP S5728374 A JPS5728374 A JP S5728374A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- layers
- distance
- band width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To avoid the lowering of light emitting efficiency due to the leakage of electrons or holes generated with the increase of currents by forming a layer, which is separated from at least one heterointerface of a double heterojunction only by a distance within a diffusion distance of a small number of carriers and has approximately the same forbidden band width as an active layer. CONSTITUTION:Light emitting atoms are constituted by five layers of an N type InP layer (a), an N type InGaAsP layer (b), a P type InP layer (c), a P type InGaAsP layer (d) and a P type InP layer (e). Accordingly, the double heterojunction consisting of three layers of the layers (a), (b) and (c), the layer (d) is separated from an interface of the layers (b) and (c) only by the distance (d) shorter than the diffusion distance of electrons, and the layer (d) is given approximately the same forbidden band width Eg' as the forbidden band width Eg of the active layer (b). Consequently, electron leaked from the active layer (b) are confined to the layer (d) by an adjacent layer (e), light with the same wavelength as the layer (b) can be generated, luminous energy increases and light emitting efficiency is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10303680A JPS5728374A (en) | 1980-07-29 | 1980-07-29 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10303680A JPS5728374A (en) | 1980-07-29 | 1980-07-29 | Semiconductor light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5728374A true JPS5728374A (en) | 1982-02-16 |
Family
ID=14343423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10303680A Pending JPS5728374A (en) | 1980-07-29 | 1980-07-29 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5728374A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5946072A (en) * | 1982-09-08 | 1984-03-15 | Koito Mfg Co Ltd | Semiconductor thin film light emitting element |
| JPH06122584A (en) * | 1992-10-12 | 1994-05-06 | Toyo Glass Co Ltd | Glass fertilizer and glass fertilizer soil |
-
1980
- 1980-07-29 JP JP10303680A patent/JPS5728374A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5946072A (en) * | 1982-09-08 | 1984-03-15 | Koito Mfg Co Ltd | Semiconductor thin film light emitting element |
| JPH06122584A (en) * | 1992-10-12 | 1994-05-06 | Toyo Glass Co Ltd | Glass fertilizer and glass fertilizer soil |
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