JPS5756203B2 - - Google Patents

Info

Publication number
JPS5756203B2
JPS5756203B2 JP8362979A JP8362979A JPS5756203B2 JP S5756203 B2 JPS5756203 B2 JP S5756203B2 JP 8362979 A JP8362979 A JP 8362979A JP 8362979 A JP8362979 A JP 8362979A JP S5756203 B2 JPS5756203 B2 JP S5756203B2
Authority
JP
Japan
Prior art keywords
epitaxial layer
substrate
layer
temperature
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8362979A
Other languages
Japanese (ja)
Other versions
JPS568815A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8362979A priority Critical patent/JPS568815A/en
Publication of JPS568815A publication Critical patent/JPS568815A/en
Publication of JPS5756203B2 publication Critical patent/JPS5756203B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain an epitaxial film having less crystal defect by eliminating simultaneous change of the temperature of a monocrystalline substrate and a reaction gas composition and sufficiently accelerating the growing speed of a gradient layer. CONSTITUTION:The monocryastlline substrate of gallium arsenide, gallium phosphide or the like is set, for example, in a range of 900-970 deg.C to form the first epitaxial layer having 0 or 1 or mixed crystal ratio. Then, the substrate is abruptly decreased at its temperature to 760-870 deg.C to form the second epitaxial layer having the same mixed crystal ratio as that of the first epitaxial layer. Subsequently, the third epitaxial layer, that is, a gradient layer is grown while retaining the temperature of the substrate, and after the mixed crystal ratio reaches prescribed value, the fourth epitaxial layer, that is, an operational layer is grown. In this manner, the growing speed of the gradient layer is sufficiently accelerated without changing simultaneously the temperature of the substrate and the reaction gas composition, thereby obtaining an epitaxial layer having less crystal defects.
JP8362979A 1979-07-02 1979-07-02 Method of growing of compound semiconductor in vapor phase epitaxial film Granted JPS568815A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8362979A JPS568815A (en) 1979-07-02 1979-07-02 Method of growing of compound semiconductor in vapor phase epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8362979A JPS568815A (en) 1979-07-02 1979-07-02 Method of growing of compound semiconductor in vapor phase epitaxial film

Publications (2)

Publication Number Publication Date
JPS568815A JPS568815A (en) 1981-01-29
JPS5756203B2 true JPS5756203B2 (en) 1982-11-29

Family

ID=13807754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8362979A Granted JPS568815A (en) 1979-07-02 1979-07-02 Method of growing of compound semiconductor in vapor phase epitaxial film

Country Status (1)

Country Link
JP (1) JPS568815A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH081955B2 (en) * 1991-08-21 1996-01-10 ヒューズ・エアクラフト・カンパニー Method of manufacturing an inverted modulation-doped heterostructure
US6543225B2 (en) 2001-07-20 2003-04-08 Scuderi Group Llc Split four stroke cycle internal combustion engine
WO2003040530A2 (en) 2001-11-02 2003-05-15 Scuderi Group Llc Split four stroke engine
US6952923B2 (en) 2003-06-20 2005-10-11 Branyon David P Split-cycle four-stroke engine
US6986329B2 (en) 2003-07-23 2006-01-17 Scuderi Salvatore C Split-cycle engine with dwell piston motion

Also Published As

Publication number Publication date
JPS568815A (en) 1981-01-29

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