JPS5567129A - Method of epitaxial growth at liquid phase - Google Patents
Method of epitaxial growth at liquid phaseInfo
- Publication number
- JPS5567129A JPS5567129A JP14012478A JP14012478A JPS5567129A JP S5567129 A JPS5567129 A JP S5567129A JP 14012478 A JP14012478 A JP 14012478A JP 14012478 A JP14012478 A JP 14012478A JP S5567129 A JPS5567129 A JP S5567129A
- Authority
- JP
- Japan
- Prior art keywords
- molten
- source
- boat
- ingaas
- boats
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To improve crystallization, by heating molten InGaAs and molten polycrystalline InP to such a temperature that phosophorus is not molten and by bringing the molten substances into contact with each other, thereafter cooling them and measuring the decrement of the polycrystalline InP and by using the molten InGaAs for growth if its atomic ratio is equal to a prescribed value.
CONSTITUTION: A weighed polycrystalline InP source 2 is put in a recess provided on a lower boat 1. A weighed InGaAs 4 is put in a recess of an upper boat 3. These boats are then set in a heating furnace so that the substances in the boats are maintained at a temperature of 650°C. The three component substance 4 is molten first. The boat 3 is slid so that the source 2 and the molten substance 4 are kept in contact with each other for about 30 minutes. The boat 3 is thereafer slid again so that the source 2 and the molten substance 4 are separated from each other. The boats 1, 3 are then taken out of the furnace and cooled to room temperature. The source 2 is picked up so that its decrement is measured. If the atomic composition of composition of a resulting three component crystal is 0.030W0.032 of Ga, 0.914W 0.913 of In and 0.056W0.055 of As, the crystal is used for growth.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14012478A JPS5567129A (en) | 1978-11-14 | 1978-11-14 | Method of epitaxial growth at liquid phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14012478A JPS5567129A (en) | 1978-11-14 | 1978-11-14 | Method of epitaxial growth at liquid phase |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5567129A true JPS5567129A (en) | 1980-05-21 |
Family
ID=15261450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14012478A Pending JPS5567129A (en) | 1978-11-14 | 1978-11-14 | Method of epitaxial growth at liquid phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5567129A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5918630A (en) * | 1982-07-21 | 1984-01-31 | Sanyo Electric Co Ltd | Epitaxial growth method |
-
1978
- 1978-11-14 JP JP14012478A patent/JPS5567129A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5918630A (en) * | 1982-07-21 | 1984-01-31 | Sanyo Electric Co Ltd | Epitaxial growth method |
JPH0328817B2 (en) * | 1982-07-21 | 1991-04-22 | Sanyo Denki Kk |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Harman | Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te system | |
JPS573798A (en) | Crystal crowing method of compound semiconductor or groups 2-6 | |
Antypas | Liquidus and solidus data at 500° C for the In-Ga-Sb system | |
JPS5567129A (en) | Method of epitaxial growth at liquid phase | |
Astles et al. | Liquidus measurements in the Pb-Sn-Te system | |
Jones | Anthracene and Anthracene-Tetracene Crystals from Vapor | |
JPS5756203B2 (en) | ||
JPS54150375A (en) | Liquid phase epitaxial growth method for semiconductor element | |
JPS54107669A (en) | Semiconductor crystal growing unit | |
JPS5478377A (en) | Method and apparatus for growing semiconductor crystal | |
JPS55117231A (en) | Growing method of crystal | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS5429560A (en) | Gas phase growth method for semiconductor | |
JPS52155186A (en) | Liquid phase growth of iii-v group semiconductor | |
JPS55113699A (en) | Semi-insulating gallium arsenide crystal | |
JPS5228258A (en) | Method for growth of crystals from liquid phase | |
JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
JPS534473A (en) | Silicon semiconductor device | |
JPS52115171A (en) | Liquid phase epitaxial growing method | |
JPS5734099A (en) | Epitaxial growth of liquid phase | |
JPS52155187A (en) | Liquid phase growth of semiconductor crystal | |
Tkach et al. | The Formation of a Metastable Modification of Samarium on Quenching from the Melt | |
JPS5228863A (en) | Process for growing in liquid phase | |
JPS52129277A (en) | Liquid phase epitaxial growth method | |
JPS53134360A (en) | Vapor phase growing method for compound semiconductor |