JPS5749234A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5749234A JPS5749234A JP12438480A JP12438480A JPS5749234A JP S5749234 A JPS5749234 A JP S5749234A JP 12438480 A JP12438480 A JP 12438480A JP 12438480 A JP12438480 A JP 12438480A JP S5749234 A JPS5749234 A JP S5749234A
- Authority
- JP
- Japan
- Prior art keywords
- specimen
- reactive gas
- chlorided
- silicide
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title 1
- 238000001020 plasma etching Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- QJTBJHOQMPDSSA-ACNJIEPASA-N CCC(CC)CN(C[C@@H](O)[C@H](Cc1ccccc1)NC(=O)O[C@H]1CO[C@H]2OCC[C@@H]12)S(=O)(=O)c1ccc(cc1)[C@H](C)O Chemical compound CCC(CC)CN(C[C@@H](O)[C@H](Cc1ccccc1)NC(=O)O[C@H]1CO[C@H]2OCC[C@@H]12)S(=O)(=O)c1ccc(cc1)[C@H](C)O QJTBJHOQMPDSSA-ACNJIEPASA-N 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To improve the reliability of dry etching step by employing nitrogen and compound of halogen elements as reactive gas, eliminating detrimental carbon in the plasma, and etching Si, silicide, metal or the like. CONSTITUTION:A specimen 3 to be worked made of silicide, e.g., Si or Si3N4 or the like is placed on a specimen tray 4 of a device container 1, and reactive gas NF4, hydrogen, oxygen or inert gas is introduced via pipes 9, 10. The NF4 is activated by microwave in an activation chamber 5 to produce fluorine radical to etch the specimen 3. When a resist mask is covered, for example, on the specimen 3, it can be selectively etched. The reactive gas may employ chlorided nitride. Solid powder of fluorided ammonium, chlorided ammonium is contained in the chamber 5, inert gas is introduced to produce plasma radical by microwave or the like, and it can thus be etched.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12438480A JPS5749234A (en) | 1980-09-08 | 1980-09-08 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12438480A JPS5749234A (en) | 1980-09-08 | 1980-09-08 | Plasma etching method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2291003A Division JP2564702B2 (en) | 1990-10-29 | 1990-10-29 | Plasma etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5749234A true JPS5749234A (en) | 1982-03-23 |
JPH02850B2 JPH02850B2 (en) | 1990-01-09 |
Family
ID=14884067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12438480A Granted JPS5749234A (en) | 1980-09-08 | 1980-09-08 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5749234A (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5980778A (en) * | 1982-10-30 | 1984-05-10 | Daikin Ind Ltd | Etching method |
JPS59214226A (en) * | 1983-05-19 | 1984-12-04 | Matsushita Electric Ind Co Ltd | Etching method |
JPS59219470A (en) * | 1983-05-25 | 1984-12-10 | Furukawa Electric Co Ltd:The | Plasma surface treatment |
JPS6020516A (en) * | 1983-07-14 | 1985-02-01 | Tokyo Denshi Kagaku Kabushiki | Dry etching method of silicon nitride film |
JPS61144026A (en) * | 1984-12-17 | 1986-07-01 | Toshiba Corp | Dry etching method |
JPS6310522A (en) * | 1986-07-02 | 1988-01-18 | Sony Corp | Dry etching method |
JPS63151024A (en) * | 1986-12-16 | 1988-06-23 | Semiconductor Energy Lab Co Ltd | Etching method |
JPS63262483A (en) * | 1987-04-01 | 1988-10-28 | アルカテル・セイテ | Surface etching of indium phosphide part |
JPH02503614A (en) * | 1987-06-01 | 1990-10-25 | コミッサレ・ア・レナジイ・アトミック | Etching method using gas plasma |
JPH02309634A (en) * | 1989-05-24 | 1990-12-25 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0464365U (en) * | 1990-10-09 | 1992-06-02 | ||
JPH04211126A (en) * | 1991-01-18 | 1992-08-03 | Hitachi Ltd | Dry etching method |
JPH04211125A (en) * | 1991-01-18 | 1992-08-03 | Hitachi Ltd | Dry etcher |
EP0924282A1 (en) * | 1997-12-18 | 1999-06-23 | Central Glass Company, Limited | Gas for removing a deposit and its use |
JP2010165954A (en) * | 2009-01-16 | 2010-07-29 | Ulvac Japan Ltd | Vacuum processing apparatus and vacuum processing method |
JP2015060934A (en) * | 2013-09-18 | 2015-03-30 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0783396B2 (en) * | 1990-02-27 | 1995-09-06 | コクヨ株式会社 | Mounting stanchions such as a telephone stand |
-
1980
- 1980-09-08 JP JP12438480A patent/JPS5749234A/en active Granted
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5980778A (en) * | 1982-10-30 | 1984-05-10 | Daikin Ind Ltd | Etching method |
JPH0526330B2 (en) * | 1983-05-19 | 1993-04-15 | Matsushita Electric Ind Co Ltd | |
JPS59214226A (en) * | 1983-05-19 | 1984-12-04 | Matsushita Electric Ind Co Ltd | Etching method |
JPS59219470A (en) * | 1983-05-25 | 1984-12-10 | Furukawa Electric Co Ltd:The | Plasma surface treatment |
JPS6020516A (en) * | 1983-07-14 | 1985-02-01 | Tokyo Denshi Kagaku Kabushiki | Dry etching method of silicon nitride film |
JPS61144026A (en) * | 1984-12-17 | 1986-07-01 | Toshiba Corp | Dry etching method |
JPS6310522A (en) * | 1986-07-02 | 1988-01-18 | Sony Corp | Dry etching method |
JPS63151024A (en) * | 1986-12-16 | 1988-06-23 | Semiconductor Energy Lab Co Ltd | Etching method |
JPS63262483A (en) * | 1987-04-01 | 1988-10-28 | アルカテル・セイテ | Surface etching of indium phosphide part |
JPH02503614A (en) * | 1987-06-01 | 1990-10-25 | コミッサレ・ア・レナジイ・アトミック | Etching method using gas plasma |
JPH02309634A (en) * | 1989-05-24 | 1990-12-25 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0464365U (en) * | 1990-10-09 | 1992-06-02 | ||
JPH04211126A (en) * | 1991-01-18 | 1992-08-03 | Hitachi Ltd | Dry etching method |
JPH04211125A (en) * | 1991-01-18 | 1992-08-03 | Hitachi Ltd | Dry etcher |
EP0924282A1 (en) * | 1997-12-18 | 1999-06-23 | Central Glass Company, Limited | Gas for removing a deposit and its use |
JP2010165954A (en) * | 2009-01-16 | 2010-07-29 | Ulvac Japan Ltd | Vacuum processing apparatus and vacuum processing method |
JP2015060934A (en) * | 2013-09-18 | 2015-03-30 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
Also Published As
Publication number | Publication date |
---|---|
JPH02850B2 (en) | 1990-01-09 |
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