JPS5587438A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5587438A
JPS5587438A JP16402178A JP16402178A JPS5587438A JP S5587438 A JPS5587438 A JP S5587438A JP 16402178 A JP16402178 A JP 16402178A JP 16402178 A JP16402178 A JP 16402178A JP S5587438 A JPS5587438 A JP S5587438A
Authority
JP
Japan
Prior art keywords
photoresist film
radical
tube
changed
quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16402178A
Other languages
Japanese (ja)
Inventor
Minoru Inoue
Kazuo Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16402178A priority Critical patent/JPS5587438A/en
Publication of JPS5587438A publication Critical patent/JPS5587438A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To remove in a short time a photoresist film which is formed on a semiconductor substrate and which has been used in a dry etching step, by subjecting the photoresist film to a plasma treatment using a gaseous mixture of a gas generating H* or CO* radical and O2.
CONSTITUTION: A semiconductor substrate 1 having a photoresist film which has been changed in quality and which is going to be removed is laid on a wafer holder 2 so as to be placed in a reaction tube 3. The air in the tube 3 is then removed to make the interior thereof vacuous, and O2 gas to which 20% H2 gas has been added is introduced into the tube 3 through a reaction gas introducing pipe 4. The internal pressure of the pipe 3 is set to around 1 Torr, and a high frequency current is applied to a high frequency coil 5 provided around the tube 3, to generate H* radical. The photoresist film the quality of which has been changed is reduced to ashes in 2W3 minutes due to H* radical referred to above, the ashes being then removed. CO* radical may also be used for this purpose. According to this method, a photoresist film, which has been exposed to fluorine ion or fluorine radical in the preceding step and which has been changed in quality can be removed in 1/3W1/5 of time required to remove a similar photoresist film by subjecting it to plasma treatment.
COPYRIGHT: (C)1980,JPO&Japio
JP16402178A 1978-12-25 1978-12-25 Manufacture of semiconductor device Pending JPS5587438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16402178A JPS5587438A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16402178A JPS5587438A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5587438A true JPS5587438A (en) 1980-07-02

Family

ID=15785273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16402178A Pending JPS5587438A (en) 1978-12-25 1978-12-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587438A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169136A (en) * 1983-03-16 1984-09-25 Fujitsu Ltd Method for detecting end of etching of resist film
JPS59169137A (en) * 1983-03-16 1984-09-25 Fujitsu Ltd Formation of pattern of organic film
JPS6243132A (en) * 1985-08-20 1987-02-25 Sharp Corp Plasma treatment method
JPS63198331A (en) * 1987-02-13 1988-08-17 Tokyo Electron Ltd Ashing apparatus
JPH01134929A (en) * 1987-11-19 1989-05-26 Tokuda Seisakusho Ltd Dryetching process
JPH0291937A (en) * 1988-09-29 1990-03-30 Fujitsu Ltd Ashing device and ashing using same
JPH02263436A (en) * 1989-04-03 1990-10-26 Mitsubishi Electric Corp Generating method of active chemical species and manufacture of electronic member material
JPH07254589A (en) * 1995-01-30 1995-10-03 Hitachi Ltd Post-processing of sample
JPH08227877A (en) * 1995-10-27 1996-09-03 Hitachi Ltd Plasma treatment method and device
US7005385B2 (en) * 2003-12-15 2006-02-28 Infineon Technologies Ag Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuring

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4999558A (en) * 1973-01-25 1974-09-20
JPS5151938A (en) * 1974-10-31 1976-05-07 Tokyo Ohka Kogyo Co Ltd Fuotorejisutono kaikahoho
JPS52113164A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Removal of organic agent

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4999558A (en) * 1973-01-25 1974-09-20
JPS5151938A (en) * 1974-10-31 1976-05-07 Tokyo Ohka Kogyo Co Ltd Fuotorejisutono kaikahoho
JPS52113164A (en) * 1976-03-19 1977-09-22 Hitachi Ltd Removal of organic agent

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169136A (en) * 1983-03-16 1984-09-25 Fujitsu Ltd Method for detecting end of etching of resist film
JPS59169137A (en) * 1983-03-16 1984-09-25 Fujitsu Ltd Formation of pattern of organic film
JPS6243132A (en) * 1985-08-20 1987-02-25 Sharp Corp Plasma treatment method
JPS63198331A (en) * 1987-02-13 1988-08-17 Tokyo Electron Ltd Ashing apparatus
JPH01134929A (en) * 1987-11-19 1989-05-26 Tokuda Seisakusho Ltd Dryetching process
JPH0291937A (en) * 1988-09-29 1990-03-30 Fujitsu Ltd Ashing device and ashing using same
JPH02263436A (en) * 1989-04-03 1990-10-26 Mitsubishi Electric Corp Generating method of active chemical species and manufacture of electronic member material
JPH07254589A (en) * 1995-01-30 1995-10-03 Hitachi Ltd Post-processing of sample
JPH08227877A (en) * 1995-10-27 1996-09-03 Hitachi Ltd Plasma treatment method and device
US7005385B2 (en) * 2003-12-15 2006-02-28 Infineon Technologies Ag Method for removing a resist mask with high selectivity to a carbon hard mask used for semiconductor structuring

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