JPH02850B2 - - Google Patents
Info
- Publication number
- JPH02850B2 JPH02850B2 JP12438480A JP12438480A JPH02850B2 JP H02850 B2 JPH02850 B2 JP H02850B2 JP 12438480 A JP12438480 A JP 12438480A JP 12438480 A JP12438480 A JP 12438480A JP H02850 B2 JPH02850 B2 JP H02850B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- plasma
- gas
- chloride
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 9
- QEHKBHWEUPXBCW-UHFFFAOYSA-N nitrogen trichloride Chemical compound ClN(Cl)Cl QEHKBHWEUPXBCW-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 235000019270 ammonium chloride Nutrition 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- -1 nitrogen halides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は、窒素とハロゲン元素との化合物、特
に塩化窒素をプラズマエツチングの反応性気体に
用い、金属または金属化合物をプラズマエツチン
グさせることにある。DETAILED DESCRIPTION OF THE INVENTION The present invention uses a compound of nitrogen and a halogen element, particularly nitrogen chloride, as a reactive gas for plasma etching to plasma-etch metals or metal compounds.
近年、エツチング技術を必要とする分野、例え
ば半導体集積回路の製造工程におけるエツチング
には、従来のエツチング溶液を用いたウエツトエ
ツチングの代わりに反応性ガスを用いたドライエ
ツチングが開発されつつある。 In recent years, for etching in fields that require etching techniques, such as in the manufacturing process of semiconductor integrated circuits, dry etching using a reactive gas has been developed in place of the conventional wet etching using an etching solution.
このドライエツチングは工程の簡略化等の特徴
及びデバイスの信頼性の向上を図ることができる
とされている。このため、エツチングガスはハロ
ゲン元素例えば弗素、塩素の化合物特にCF4、
CCl4をプラズマ中にて分解し、F*、Cl*を発生さ
せていた。しかし同時に固体である炭素が生成さ
れ、これが半導体の信頼性向上の面ではきわめて
有害なものであることが判明した。 This dry etching is said to be capable of simplifying the process and improving device reliability. For this reason, the etching gas is a compound of halogen elements such as fluorine and chlorine, especially CF 4 ,
CCl 4 was decomposed in plasma to generate F * and Cl * . However, at the same time, solid carbon was produced, which turned out to be extremely harmful in terms of improving the reliability of semiconductors.
このため、このCF4、CCl4のガス中に0.1〜５
体積％の酸素を入れ、固体炭素をCO2ガスにして
しまうことが検討されている。 Therefore, in this CF 4 and CCl 4 gas, 0.1 to 5
It is being considered to turn solid carbon into CO 2 gas by adding vol% oxygen.
しかしこのプラズマ中での炭素と酸素との化合
は必ずしも十分であるとはいえず、基本的に半導
体集積回路に炭素化物気体を用いることは不適当
であつた。 However, the combination of carbon and oxygen in this plasma is not necessarily sufficient, and it has been fundamentally inappropriate to use carbonide gas in semiconductor integrated circuits.
本発明は化学的に安定な気体であり、また活性
化または分解せしめた時、ハロゲン元素とその副
産物が固体でなく、無害の気体である窒素のハロ
ゲン化物特に弗化窒素（NF、NF2、以下NF3と
総称する）また塩化窒素（NCl、NCl2、NCl3以
下NClで総称する）を用いた。さらに、このNF、
NClの水素化物である弗化アンモニユーム
（NH4F、NH4HF2）、塩化アンモニユーム
（NH4Cl）、塩化水素化窒素をプラズマ中にて活
性化、分解してN2、NH3の安定な気体と弗素、
塩素のラジカルを発生させることを他の特徴とし
ている。 The present invention uses nitrogen halides, especially nitrogen fluoride (NF, NF 2 , Nitrogen chloride (NCl, NCl 2 , NCl 3 (hereinafter collectively referred to as NCl)) was also used. Furthermore, this NF,
Ammonium fluoride (NH 4 F, NH 4 HF 2 ), ammonium chloride (NH 4 Cl), and nitrogen chloride, which are hydrides of NCl, are activated and decomposed in plasma to stabilize N 2 and NH 3 gas and fluorine,
Another feature is that it generates chlorine radicals.
ここでは第１図に示すように縦型のエツチング
系を用いた。即ちエツチング容器１には試料台４
上にて試料３が載せられている。反応性気体は
NF3を９よりまた水素または不活性ガスを１０よ
り導入した。 Here, a vertical etching system was used as shown in FIG. That is, the etching container 1 has a sample stage 4.
Sample 3 is placed on top. reactive gas is
NF 3 was introduced from 9 and hydrogen or an inert gas was introduced from 10.
活性化室５にて、マイクロ波発生源６にて
2.45GHz、1.35KW最大の容量を有するマグネト
ロンよりアラニユエイター７を経て反応性ガスを
活性にする。すると
NF3→N*＋3F
2N*→N2
F*＋Si→SiF4
の反応により試料のエツチングされるべき物が単
結晶、多結晶、アモルフアスまたはセミアモルフ
アス構造の珪素においてはSiF4となつてエツチン
グされた。またこの被エツチング材は他の珪化物
例えば窒化珪素、酸化アルミニユーム、酸化珪素
等であつてもよい。 At activation chamber 5, at microwave source 6
The reactive gas is activated through the Alanuator 7 from a magnetron with a maximum capacity of 2.45GHz and 1.35KW. Then, due to the reaction of NF 3 →N * +3F 2N * →N 2 F * +Si→SiF 4 , the material to be etched in the sample becomes SiF 4 in the case of silicon with single crystal, polycrystal, amorphous or semi-amorphous structure. Etched. The material to be etched may also be other silicides such as silicon nitride, aluminum oxide, silicon oxide, etc.
反応容器の圧力は排気口のストツプバルブ１１
ニードルバルブ１２またはロータリーポンプ１３
により調整した。 The pressure in the reaction vessel is controlled by the stop valve 11 at the exhaust port.
Needle valve 12 or rotary pump 13
Adjusted by.
基板または基板上の被膜を選択酸化するには、
フオトレジスト例えばOMR83（東京応化製）を
用いレジストパターンにより1μ中のスリツト開
口を設け、開口部のみをエツチングすればよい。 To selectively oxidize a substrate or a coating on a substrate,
Using a photoresist such as OMR83 (manufactured by Tokyo Ohka), a slit opening of 1 μm may be provided in a resist pattern, and only the opening portion may be etched.
エツチング時の容器の圧力は0.01〜0.5torrとし
たが、一般に0.05〜0.5torrがサイドエツチもなく
微細パターンを切ることができた。 The pressure in the container during etching was set at 0.01 to 0.5 torr, but generally a fine pattern could be cut at 0.05 to 0.5 torr without side etching.
試料は100〜−30℃の範囲にて制御した。特に
これに水素を１〜10％混入して酸化珪素をエツチ
ングする時、10〜−15℃に冷やしておく方がパタ
ーンの抜けがエツチング速度を2000Å／分〜300
Å／分と下げることができ、きれいであつた。 The sample was controlled in the range of 100 to -30°C. In particular, when etching silicon oxide by mixing 1 to 10% hydrogen, it is better to cool it to 10 to -15°C to prevent pattern omission and reduce the etching rate to 2000 Å/min to 300 Å/min.
It was possible to lower it to Å/min and it was clean.
またハロゲン元素のうち塩化窒素を用いるとア
ルミニユーム、モリブデン、タングステン等の金
属またはその化合物のエツチングを実施し得る。
この塩化窒素は塩化アンモニユームと塩素との反
応により容易に作り得る液体で、減圧下では容易
に気化し、プラズマエツチング気体として用いる
ことができる。この塩化窒素とアルミニユームと
の反応の場合の反応式を以下に示す。 Furthermore, if nitrogen chloride among the halogen elements is used, metals such as aluminum, molybdenum, tungsten, or their compounds can be etched.
Nitrogen chloride is a liquid that can be easily produced by the reaction of ammonium chloride and chlorine, and is easily vaporized under reduced pressure and can be used as a plasma etching gas. The reaction formula for this reaction between nitrogen chloride and aluminum is shown below.
NCl3→N*＋3Cl*
2N*→N2
3Cl*＋Al→AlCl3
さらにここに水素を0.1〜10％添加してパター
ンの切れをよくしてもよい。 NCl 3 →N * +3Cl * 2N * →N 2 3Cl * +Al → AlCl 3 Furthermore, 0.1 to 10% of hydrogen may be added here to improve the sharpness of the pattern.
かくして金属またはその化合物を塩化水素によ
り珪素の弗化窒素によるプラズマエツチングと同
様に切れのよいプラズマエツチングを行うことが
できた。 In this way, it was possible to perform sharp plasma etching of metals or their compounds using hydrogen chloride, similar to the plasma etching of silicon using nitrogen fluoride.
さらにまた、本発明においては活性化室に固体
例えば粉末のNH4F、NH4HF2をおき、同時に
He、Ar等の不活性ガスを１０より導入し、マイ
クロ波によりこの弗化アンモニユームを活性化分
解し、弗素ラジカルを発生させてもよい。さらに
この発生したラジカルおよびこの副産物はHe、
Arにより試料３の上面に衝突しそれを選択的に
エツチングさせることができた。 Furthermore, in the present invention, solid, for example, powdered NH 4 F, NH 4 HF 2 is placed in the activation chamber, and at the same time
An inert gas such as He or Ar may be introduced from 10, and the ammonium fluoride may be activated and decomposed using microwaves to generate fluorine radicals. Furthermore, this generated radical and this byproduct are He,
The Ar bombarded the top surface of the sample 3, allowing it to be selectively etched.
これは塩化アンモニユームを用いても同様であ
る。 This also applies to ammonium chloride.
本発明は珪素またはその化合物のプラズマエツ
チングを示した。しかしGaAs、InP、BP等のプ
ラズマエツチングにおいても同様であり、さらに
これらの酸化物、窒化物に対しても適用できる。 The present invention has demonstrated plasma etching of silicon or its compounds. However, the same applies to plasma etching of GaAs, InP, BP, etc., and can also be applied to their oxides and nitrides.
またプラズマエツチング系はマイクロ波のみで
はなく13.56MHzの高周波を加えてプラズマ化し
てもよい。また、電界を印加する方式として容量
結合型、誘導結合型、平行平板型のエツチング技
術が適用され得る。 Furthermore, in the plasma etching system, not only microwaves but also high frequency waves of 13.56 MHz may be applied to generate plasma. Further, capacitive coupling type, inductive coupling type, and parallel plate type etching techniques can be applied as a method of applying an electric field.
またこの反応性気体をスパツタエツチングまた
は反応スパツタエツチングに用いてもよいことは
いうまでもない。 It goes without saying that this reactive gas may also be used for sputter etching or reactive sputter etching.
第１図は本発明を用いたプラズマエツチング系
の概要を示す。
FIG. 1 shows an overview of a plasma etching system using the present invention.
Claims (1)
を主成分とする炭素および酸素を含まない反応性
気体に水素を１〜10％添加した混合気体をプラズ
マ化し、該プラズマ化した気体により珪素、珪素
化合物、金属、金属化合物を室温以下−30℃以上
の温度に保持して、エツチングすることを特徴と
するプラズマエツチング方法。1 A mixed gas in which 1 to 10% hydrogen is added to a carbon- and oxygen-free reactive gas containing nitrogen chloride, hydrogen chloride, or nitrogen fluoride as a main component is turned into plasma, and the plasma-formed gas is used to generate silicon and silicon. A plasma etching method characterized by etching a compound, metal, or metal compound while keeping it at a temperature of -30°C or below room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12438480A JPS5749234A (en) | 1980-09-08 | 1980-09-08 | Plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12438480A JPS5749234A (en) | 1980-09-08 | 1980-09-08 | Plasma etching method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2291003A Division JP2564702B2 (en) | 1990-10-29 | 1990-10-29 | Plasma etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5749234A JPS5749234A (en) | 1982-03-23 |
| JPH02850B2 true JPH02850B2 (en) | 1990-01-09 |
Family
ID=14884067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12438480A Granted JPS5749234A (en) | 1980-09-08 | 1980-09-08 | Plasma etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5749234A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0783396B2 (en) * | 1990-02-27 | 1995-09-06 | コクヨ株式会社 | Mounting stanchions such as a telephone stand |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0651915B2 (en) * | 1982-10-30 | 1994-07-06 | ダイキン工業株式会社 | Etching method |
| JPS59214226A (en) * | 1983-05-19 | 1984-12-04 | Matsushita Electric Ind Co Ltd | Etching method |
| JPS59219470A (en) * | 1983-05-25 | 1984-12-10 | Furukawa Electric Co Ltd:The | Plasma surface treatment |
| JPS6020516A (en) * | 1983-07-14 | 1985-02-01 | Tokyo Denshi Kagaku Kabushiki | Dry etching method of silicon nitride film |
| JPS61144026A (en) * | 1984-12-17 | 1986-07-01 | Toshiba Corp | Dry etching method |
| JPH0834204B2 (en) * | 1986-07-02 | 1996-03-29 | ソニー株式会社 | Dry etching method |
| JP2660244B2 (en) * | 1986-12-16 | 1997-10-08 | 株式会社 半導体エネルギー研究所 | Surface treatment method |
| FR2613381B1 (en) * | 1987-04-01 | 1989-06-23 | Cit Alcatel | METHOD OF ATTACKING A SURFACE OF A ROOM IN INDIUM PHOSPHIDE |
| FR2616030A1 (en) * | 1987-06-01 | 1988-12-02 | Commissariat Energie Atomique | PLASMA ETCHING OR DEPOSITION METHOD AND DEVICE FOR IMPLEMENTING THE METHOD |
| JP2939269B2 (en) * | 1989-05-24 | 1999-08-25 | 富士通株式会社 | Method for manufacturing semiconductor device |
| JPH0725171Y2 (en) * | 1990-10-09 | 1995-06-07 | 高章 吉田 | Suction hairdresser |
| JPH0652726B2 (en) * | 1991-01-18 | 1994-07-06 | 株式会社日立製作所 | Dry etching method |
| JP2509389B2 (en) * | 1991-01-18 | 1996-06-19 | 株式会社日立製作所 | Dry etching equipment |
| US6673262B1 (en) * | 1997-12-18 | 2004-01-06 | Central Glass Company, Limited | Gas for removing deposit and removal method using same |
| JP5140608B2 (en) * | 2009-01-16 | 2013-02-06 | 株式会社アルバック | Vacuum processing apparatus and vacuum processing method |
| JP2015060934A (en) * | 2013-09-18 | 2015-03-30 | 株式会社日立ハイテクノロジーズ | Plasma processing method |
-
1980
- 1980-09-08 JP JP12438480A patent/JPS5749234A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0783396B2 (en) * | 1990-02-27 | 1995-09-06 | コクヨ株式会社 | Mounting stanchions such as a telephone stand |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5749234A (en) | 1982-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02850B2 (en) | ||
| US5413670A (en) | Method for plasma etching or cleaning with diluted NF3 | |
| US5786276A (en) | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 | |
| US20060252265A1 (en) | Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control | |
| US4264409A (en) | Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide | |
| KR100299488B1 (en) | Sediment Removal Gas and Sediment Removal Method Using the Gas | |
| WO1982003636A1 (en) | Process for dry-etching aluminum or its alloy | |
| KR20030051786A (en) | Dry etching gas and method for dry etching | |
| JPH0363807B2 (en) | ||
| JP3006048B2 (en) | Dry etching method | |
| JPH04191379A (en) | Plasma treating device | |
| JPH01220448A (en) | Method of selective etching of nitride layer | |
| JP3253215B2 (en) | Etching method and etching apparatus | |
| WO2003056617A1 (en) | Etching method and plasma etching device | |
| JPH11186229A (en) | Dry etching and manufacture of semiconductor device | |
| US4364793A (en) | Method of etching silicon and polysilicon substrates | |
| CN112635317A (en) | Etching method, method for removing damaged layer, and storage medium | |
| Flamm et al. | Basic principles of plasma etching for silicon devices | |
| EP0791669B1 (en) | Method for etching inside of cvd reaction chamber | |
| KR20210058954A (en) | Etching method, etching residue removal method, and storage medium | |
| KR20210019398A (en) | Etching method and plasma processing apparatus | |
| JP2564702B2 (en) | Plasma etching method | |
| JPH053178A (en) | Manufacture of semiconductor device | |
| JP3611729B2 (en) | Etching gas | |
| JPH0770530B2 (en) | Etching method |