JPH04211126A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPH04211126A JPH04211126A JP447691A JP447691A JPH04211126A JP H04211126 A JPH04211126 A JP H04211126A JP 447691 A JP447691 A JP 447691A JP 447691 A JP447691 A JP 447691A JP H04211126 A JPH04211126 A JP H04211126A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- temperature
- workpiece
- dry etching
- etching method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 39
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 229910004014 SiF4 Inorganic materials 0.000 claims description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract description 4
- 230000007423 decrease Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
［０００１１ [00011
【産業上の利用分野］本発明は、ドライエツチング方法
に関し、とくに、サイドエッチが極めて少なく、高い寸
法精度でエツチングすることのできる。ドライエツチン
グ方法に関する。
［０００２］
【従来の技術】従来の高エネルギー粒子を利用した半導
体製造プロセスにおいては、固体試料および固体材料の
温度は水温に保たれていた。
［０００３］[Industrial Field of Application] The present invention relates to a dry etching method, and in particular, it is possible to perform etching with extremely little side etching and high dimensional accuracy. Concerning a dry etching method. [0002] BACKGROUND OF THE INVENTION In conventional semiconductor manufacturing processes using high-energy particles, the temperatures of solid samples and solid materials are kept at water temperature. [0003]
【発明が解決しようとする課題】そのため、固体温度が
比較的高く、活性ガスと固体が容易に反応し、イオンや
電子、レーザーなどのエネルギー粒子による表面反応の
促進効果の高精度制御が困難であるという欠点があった
。とくに、ドライエツチングでは、プラズマ中のラジカ
ル等の反応性中性粒子と固体との反応の制御が困難であ
るため、マスク下のエツチング、すなわちサイドエッチ
が大きく、高い寸法精度でエツチングを行なうのが困難
である。という問題があった。本発明の目的は、上記従
来の問題を解決し、高エネルギ粒子を固体に入射させて
エツチングを行なう際において、高エネルギ粒子が入射
しない面での表面反応を高精度に制御して、サイドエッ
チの少ない高精度のエツチングを行なうことのできる、
ドライエツチング方法を提供することである。
［０００４］[Problem to be solved by the invention] Therefore, the solid temperature is relatively high, the active gas and solid react easily, and it is difficult to precisely control the promotion effect of surface reactions by energetic particles such as ions, electrons, and lasers. There was a drawback. In particular, in dry etching, it is difficult to control the reaction between reactive neutral particles such as radicals in the plasma and the solid, so the etching under the mask, that is, the side etching, is large, making it difficult to perform etching with high dimensional accuracy. Have difficulty. There was a problem. The purpose of the present invention is to solve the above-mentioned conventional problems, and when etching is performed by injecting high-energy particles into a solid, the surface reaction on the surface where the high-energy particles are not incident is controlled with high precision, and side etching is performed. It is possible to perform high-precision etching with less
An object of the present invention is to provide a dry etching method. [0004]
【課題を解決するための手段】上記目的は、試料（固体
）の温度を、従来より著しく低い、所定の範囲内に保っ
てエツチングする手段を具備することにより、達成され
る。
［０００５］[Means for Solving the Problems] The above object is achieved by providing a means for etching the sample (solid) while keeping the temperature of the sample (solid) within a predetermined range, which is significantly lower than in the past. [0005]
【作用】 ドライエツチングでは、エッチされる固体の
水平面に、イオンや電子等の高エネルギー粒子と、ラジ
カル等の中性粒子が同時に入射する。機構解析を行なっ
た結果、固体の水平面では、高エネルギー粒子の照射に
より、固体の極く表面に疑似“高温″状態が作り出され
、そのため、ガス粒子やラジカルと表面電子の反応が、
大きく活性化されてエツチングに寄与する効果のあるこ
とがわかった。
［０００６］一方、固体のサイドウオールでは、ラジカ
ルと固体、およびガス分子と固体との間の反応が、冷却
された温度において起る。
［０００７］従って、試料（固体）を著しく低い温度に
保ってエツチングを行なうと、深さ方向におけるエツチ
ングは変わらず、上記サイドウオールにおける反応かは
抑制されて、サイドエッチは小さくなる。
［０００８］[Operation] In dry etching, high-energy particles such as ions and electrons and neutral particles such as radicals are simultaneously incident on the horizontal surface of the solid to be etched. As a result of mechanistic analysis, it was found that in the horizontal plane of a solid, irradiation with high-energy particles creates a pseudo-high-temperature state on the very surface of the solid, and as a result, reactions between gas particles and radicals and surface electrons occur.
It was found that it was greatly activated and had the effect of contributing to etching. [0006] On the other hand, in solid sidewalls, reactions between radicals and solids and gas molecules and solids occur at cooled temperatures. [0007] Therefore, when etching is performed while keeping the sample (solid) at a significantly low temperature, the etching in the depth direction remains unchanged, but the reaction in the sidewall is suppressed, and the side etching becomes smaller. [0008]
〈実施例１〉
図１は、高周波放電平行平板型カソードカップル式プラ
スマエッチング装置を示し、試料台１および対向電極２
は、冷却装置（水温以下、−１２０℃以上）を具備して
いる。冷却装置はヒートパイプの原理を利用したもので
あり、冷媒溜め３とパイプ４、さらに排気装置５からな
る。冷媒を変えることにより、上記温度を容易に実現す
ることができ、かつ、安定性にも優れていて、典型的に
は、１時間で設定温度±１．５℃に保持できる。
［０００９］プラズマは、高周波電力を試料台１に印加
して、画電極１，２間に発生させる。ガス導入口は、ホ
ト６である。
［００１０１本装置を用い、ＳＦ６ガスによるｐｏｌｙ
Ｓｉのエツチングを行なった結果を図２に示す。エツチ
ング条件は、ガス圧カニ５Ｘ１０Ｐａ、高周波電力＝２
００Ｗ（電力密度０．２Ｗ／ｍつであり、ｐｏｌｙＳｉ
膜（厚さ１．２μｍ）上のマスクとしては、ホトレジス
ト（ＡＺ１３５０Ｊ）膜を使用した。図２は、試料台温
度とエツチング完了時におけるサイドエツチング量（寸
法シフト量：マスク端からの寸法を示す）の関係を示し
た図であり、このエツチングにおいて温度を下げること
により、寸法シフトが著しく小さくなることがわかった
。しかも、図２から明らかなように、試料台の温度が一
１０℃以下になると、０℃のときにくらべて、寸法シフ
ト量は急激に小さくなった。
［００１１］さらに、サイドエツチング量は、ｐｏｌｙ
ＳｉとＳＦｅガスプラズマの反応生成物であるＳｉＦ４
の蒸気圧が、室温での蒸気圧の１／１０以下となる温度
、すなわち、約−１０℃以下となる温度で、２０℃での
サイドエツチング量０．８μｍの１／４以下となり。
顕著に減少した。この時、深さ方向におけるエツチング
速度ははほとんど変化せず、これは本発明の大きな特長
である。同様な現象は、ＡＩやＷ、レジストおよびＭ。
など、他の電子材料のエツチングにおいても確認できた
。
［００１２］すなわち、反応生成物の蒸気圧が、室温に
おける蒸気圧の１／１０以下になる温度に、試料を冷却
してエツチングすることにより、サイドエツチングを極
めて小さくすることができる。しかし、温度が低すぎる
と冷却部へのガスの吸着が起り、エツチングが不可能で
あった。このガス吸着は、導入されたガスＳＦ６の試料
温度での蒸気圧が、真空容器内のガス圧力以下になった
場合に、起ることがわかった。従って、試料の温度は、
導入されたガスの蒸気圧が、真空容器内のガス圧力以上
の蒸気圧となる温度であることが必要である。
［００１３］<Example 1> FIG. 1 shows a high-frequency discharge parallel plate type cathode couple type plasma etching apparatus, in which a sample stage 1 and a counter electrode 2
is equipped with a cooling device (water temperature or lower, -120°C or higher). The cooling device utilizes the principle of a heat pipe and consists of a refrigerant reservoir 3, a pipe 4, and an exhaust device 5. By changing the refrigerant, the above temperature can be easily achieved, and the temperature is also excellent, and typically the set temperature can be maintained at ±1.5° C. in one hour. [0009] Plasma is generated between the picture electrodes 1 and 2 by applying high frequency power to the sample stage 1. The gas inlet is photo6. [00101 Using this device, poly
The results of Si etching are shown in FIG. Etching conditions are gas pressure 5 x 10 Pa, high frequency power = 2
00W (power density 0.2W/m, polySi
A photoresist (AZ1350J) film was used as a mask on the film (thickness: 1.2 μm). Figure 2 is a diagram showing the relationship between the sample stage temperature and the side etching amount (dimensional shift amount: indicating the dimension from the edge of the mask) upon completion of etching.By lowering the temperature during etching, the dimensional shift is significantly I found out that it gets smaller. Furthermore, as is clear from FIG. 2, when the temperature of the sample stage decreased to 110°C or lower, the amount of dimensional shift decreased rapidly compared to when the temperature was 0°C. [0011] Furthermore, the amount of side etching is
SiF4 is a reaction product of Si and SFe gas plasma
The side etching amount is 1/4 or less of 0.8 .mu.m at 20.degree. C. at a temperature where the vapor pressure is 1/10 or less of the vapor pressure at room temperature, that is, about -10.degree. C. or less. It decreased significantly. At this time, the etching rate in the depth direction hardly changes, which is a major feature of the present invention. A similar phenomenon occurs in AI, W, resist and M. This was also confirmed in the etching of other electronic materials. [0012] That is, side etching can be extremely reduced by etching the sample by cooling it to a temperature at which the vapor pressure of the reaction product is 1/10 or less of the vapor pressure at room temperature. However, if the temperature is too low, gas adsorption occurs in the cooling section, making etching impossible. It has been found that this gas adsorption occurs when the vapor pressure of the introduced gas SF6 at the sample temperature becomes lower than the gas pressure in the vacuum container. Therefore, the temperature of the sample is
It is necessary that the temperature is such that the vapor pressure of the introduced gas is higher than the gas pressure within the vacuum container. [0013]
【発明の効果】上記範囲内の温度では、図２かられかる
ように、サイドエツチングの量は極めて小さくなり、本
発明は、高集積密度を有するＬＳＩ製造に用いられるエ
ツチング装置として、極めて優れている。
［００１４］本発明は、平行平板型エツチング装置のみ
ではなく、マイクロ波エツチング装置や、イオンビーム
エツチング装置等、他のエツチング装置を用いた場合に
も有効である。また、真空容器自体の冷却もガスエツチ
ング反応の制御に関係があることがわかった。ただし、
この場合には、真空容器を二重構造にするなど、霧滴対
策が必要であった。Effects of the Invention At temperatures within the above range, the amount of side etching becomes extremely small as seen in FIG. There is. [0014] The present invention is effective not only when using a parallel plate type etching apparatus but also when using other etching apparatuses such as a microwave etching apparatus and an ion beam etching apparatus. It was also found that the cooling of the vacuum vessel itself is related to the control of the gas etching reaction. however,
In this case, it was necessary to take measures against fog droplets, such as making the vacuum container double-layered.
【図１】本発明の実施に用いたエツチング装置の断面図
。FIG. 1 is a cross-sectional view of an etching apparatus used in carrying out the present invention.
【図２】本発明の効果を示す曲線図。FIG. 2 is a curve diagram showing the effects of the present invention.
１・・・試料台 訃・・対向電極３・・・冷
媒溜め ４・・・パイプ５・・・ポンプ
６・・・ガス導入孔７・・・ｒｆ電源
８・・・試料９・・・排気。1...Sample stage End...Counter electrode 3...Refrigerant reservoir 4...Pipe 5...Pump
6...Gas introduction hole 7...RF power supply
8...Sample 9...Exhaust.
【図１】[Figure 1]
【図２】[Figure 2]
Claims (4)
真空容器内の所定の位置に配置し、エツチングガスのプ
ラズマを利用して上記被加工物をエツチングする方法に
おいて、上記エツチングは、上記被加工物上に形成せれ
た所望の形状を有するレジスト膜をマスクとして用い、
上記試料台の温度を一１０℃以下に保って行なわれるこ
とを特徴とするドライエツチング方法。1. A method in which a workpiece to be etched is placed at a predetermined position in a vacuum container using a sample stage, and the workpiece is etched using plasma of an etching gas. Using a resist film with a desired shape formed on the workpiece as a mask,
A dry etching method characterized in that the temperature of the sample stage is maintained at -10°C or less.
は、ＳｉＦ４であることを特徴とする請求項１に記載の
ドライエツチング方法。2. The dry etching method according to claim 1, wherein the reaction product produced by said etching is SiF4.
とする請求項２に記載のドライエツチング方法。3. The dry etching method according to claim 2, wherein the workpiece is silicon.
特徴とする請求項２もしくは３に記載のドライエツチン
グ方法。4. The dry etching method according to claim 2, wherein the etching gas is SFs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3004476A JPH0652726B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3004476A JPH0652726B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching method |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59011945A Division JPH0614518B2 (en) | 1984-01-27 | 1984-01-27 | Surface reaction control method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04211126A true JPH04211126A (en) | 1992-08-03 |
| JPH0652726B2 JPH0652726B2 (en) | 1994-07-06 |
Family
ID=11585171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3004476A Expired - Lifetime JPH0652726B2 (en) | 1991-01-18 | 1991-01-18 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0652726B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558593A (en) * | 1978-07-03 | 1980-01-22 | American Water Services | Apparatus for cleaning pipe of heat exchanger |
| JPS5749234A (en) * | 1980-09-08 | 1982-03-23 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4381965A (en) | 1982-01-06 | 1983-05-03 | Drytek, Inc. | Multi-planar electrode plasma etching |
-
1991
- 1991-01-18 JP JP3004476A patent/JPH0652726B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558593A (en) * | 1978-07-03 | 1980-01-22 | American Water Services | Apparatus for cleaning pipe of heat exchanger |
| JPS5749234A (en) * | 1980-09-08 | 1982-03-23 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0652726B2 (en) | 1994-07-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |