JPS5742153A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5742153A JPS5742153A JP11797880A JP11797880A JPS5742153A JP S5742153 A JPS5742153 A JP S5742153A JP 11797880 A JP11797880 A JP 11797880A JP 11797880 A JP11797880 A JP 11797880A JP S5742153 A JPS5742153 A JP S5742153A
- Authority
- JP
- Japan
- Prior art keywords
- rays
- alpha
- substrate
- reliability
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
Abstract
PURPOSE:To increase the reliability of a face down type semiconductor device by providing a radiation shielding plate on an insulating substrate. CONSTITUTION:A highly pure Si thin plate 6 whose thickness is about 30mum is bonded on an alumina substrate 1 so as to cover the surface which faces an active region 5 of a semiconductor element 3 other than solder bump parts 4. The bumps 4 are contacted to electrodes 2 on said substrate 1, and compressed, heated, and bonded. Since the distance of intrusion of standard alpha-rays having energy of 5Mev into Si is about 25mum, the thin plate 6 sufficiently shields the alpha-rays, and prevents the occurrence of software errors. The alpha-rays from alumina around the shielding plate 6 has a very small incident angle with respect to the surface of the element 3, and does not reach the surface, or only very small amount of energy reaches the surface. In this simple constitution, the reliability of the device is greatly enhanced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11797880A JPS5742153A (en) | 1980-08-27 | 1980-08-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11797880A JPS5742153A (en) | 1980-08-27 | 1980-08-27 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5742153A true JPS5742153A (en) | 1982-03-09 |
Family
ID=14724978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11797880A Pending JPS5742153A (en) | 1980-08-27 | 1980-08-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5742153A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63196043A (en) * | 1987-02-10 | 1988-08-15 | Toshiba Corp | Semiconductor device |
JPH01242779A (en) * | 1988-03-23 | 1989-09-27 | Matsushita Electric Ind Co Ltd | Device for treating thin film |
US5219766A (en) * | 1990-04-25 | 1993-06-15 | Oki Electric Industry Co., Ltd. | Semiconductor device having a radiation resistance and method for manufacturing same |
US20200091087A1 (en) * | 2018-09-18 | 2020-03-19 | Toshiba Memory Corporation | Semiconductor memory and semiconductor memory manufacturing method |
-
1980
- 1980-08-27 JP JP11797880A patent/JPS5742153A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63196043A (en) * | 1987-02-10 | 1988-08-15 | Toshiba Corp | Semiconductor device |
JPH01242779A (en) * | 1988-03-23 | 1989-09-27 | Matsushita Electric Ind Co Ltd | Device for treating thin film |
JPH0832956B2 (en) * | 1988-03-23 | 1996-03-29 | 松下電器産業株式会社 | Thin film processing equipment |
US5219766A (en) * | 1990-04-25 | 1993-06-15 | Oki Electric Industry Co., Ltd. | Semiconductor device having a radiation resistance and method for manufacturing same |
US20200091087A1 (en) * | 2018-09-18 | 2020-03-19 | Toshiba Memory Corporation | Semiconductor memory and semiconductor memory manufacturing method |
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