JPS5636136A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5636136A
JPS5636136A JP11115679A JP11115679A JPS5636136A JP S5636136 A JPS5636136 A JP S5636136A JP 11115679 A JP11115679 A JP 11115679A JP 11115679 A JP11115679 A JP 11115679A JP S5636136 A JPS5636136 A JP S5636136A
Authority
JP
Japan
Prior art keywords
integrated circuit
silicon
deterioration
thickness
heat resisting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11115679A
Other languages
Japanese (ja)
Inventor
Norio Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11115679A priority Critical patent/JPS5636136A/en
Publication of JPS5636136A publication Critical patent/JPS5636136A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

PURPOSE:To shield the radiation from a package material and prevent the deterioration of characteristics by a method wherein a silicon layer is formed on the surface of a semiconductor element through a heat resisting insulator layer containing no radioactive element. CONSTITUTION:A silicon board 4 with 200-500mu thickness is glued on the surface of a silicon substrate 1 on which an integrated circuit 2 and bonding pads 5 are formed through an insulator layer (such as a polyimide resin layer with 5-10mu thickness) 3, which has a heat resisting property and contains no radioactive element, and the layers 3, 4 made up to regions except the integrated circuit 2 are removed. Thus, alpha rays radiated when uranium and thorium contained in a package forming member in ppm units are radioactively disintegrated are shielded by means of the silicon board 4, and the false operation and the deterioration of the characteristics of a MOS integrated circuit, etc. having high density can be prevented.
JP11115679A 1979-08-31 1979-08-31 Semiconductor device Pending JPS5636136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11115679A JPS5636136A (en) 1979-08-31 1979-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11115679A JPS5636136A (en) 1979-08-31 1979-08-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5636136A true JPS5636136A (en) 1981-04-09

Family

ID=14553886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11115679A Pending JPS5636136A (en) 1979-08-31 1979-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5636136A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828860A (en) * 1981-08-12 1983-02-19 Nec Corp Semiconductor device and manufacture thereof
JPS60232488A (en) * 1984-05-01 1985-11-19 品川白煉瓦株式会社 Device for observing inside of furnace
JPS6325258U (en) * 1986-07-31 1988-02-19
JPH01123200U (en) * 1988-02-15 1989-08-22
JPH04132258A (en) * 1990-09-25 1992-05-06 Nec Corp Connecting body for semiconductor substrate and its connection
US6198159B1 (en) 1997-03-28 2001-03-06 Ube Industries, Ltd. Bonded wafer, process for producing same and substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104060A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Resin mold type semiconductor device
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104060A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Resin mold type semiconductor device
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828860A (en) * 1981-08-12 1983-02-19 Nec Corp Semiconductor device and manufacture thereof
JPS60232488A (en) * 1984-05-01 1985-11-19 品川白煉瓦株式会社 Device for observing inside of furnace
JPS6138993B2 (en) * 1984-05-01 1986-09-01 Shinagawa Refractories Co
JPS6325258U (en) * 1986-07-31 1988-02-19
JPH01123200U (en) * 1988-02-15 1989-08-22
JPH04132258A (en) * 1990-09-25 1992-05-06 Nec Corp Connecting body for semiconductor substrate and its connection
US6198159B1 (en) 1997-03-28 2001-03-06 Ube Industries, Ltd. Bonded wafer, process for producing same and substrate

Similar Documents

Publication Publication Date Title
FR2473772B1 (en) SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
JPS56114335A (en) Semiconductor device and its manufacture
EP0029858B1 (en) Semiconductor device
JPS6477148A (en) Semiconductor storage device
JPS5636136A (en) Semiconductor device
US4481526A (en) Semiconductor device
JPS5624955A (en) Semiconductor device
JPS5593239A (en) Semiconductor device
JPS5626448A (en) Semiconductor device
JPS5739557A (en) Semiconductor device
JPS55143040A (en) Tape carrier type semiconductor device
JPS56165345A (en) Semiconductor device
JPS56158432A (en) Semiconductor device
JPS5776868A (en) Forming method for resin protected film
JPS5736847A (en) Semiconductor integrated circuit mounting device
JPS5650554A (en) Semiconductor memory
JPS5552251A (en) Semiconductor integrated circuit device
JPS5694650A (en) Resin-sealed semiconductor device
JPS56148852A (en) Semiconductor device
JPS5742153A (en) Semiconductor device
JPS55128850A (en) Semiconductor device
CA2021682A1 (en) Chip-carrier with alpha ray shield
JPS6442139A (en) Semiconductor integrated circuit device
JPS5678144A (en) Semiconductor device
JPS5565451A (en) Semiconductor integrated circuit