JPS55128852A - Insulating type semiconductor device - Google Patents

Insulating type semiconductor device

Info

Publication number
JPS55128852A
JPS55128852A JP3601379A JP3601379A JPS55128852A JP S55128852 A JPS55128852 A JP S55128852A JP 3601379 A JP3601379 A JP 3601379A JP 3601379 A JP3601379 A JP 3601379A JP S55128852 A JPS55128852 A JP S55128852A
Authority
JP
Japan
Prior art keywords
pellet
plate
heat dissipating
si3n4
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3601379A
Other languages
Japanese (ja)
Inventor
Motofumi Miyazaki
Michio Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3601379A priority Critical patent/JPS55128852A/en
Publication of JPS55128852A publication Critical patent/JPS55128852A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Abstract

PURPOSE:To improve the heat dissipating effect of an insulating semiconductor device by employing SiO2 or Si3N4 for an insulating film when mounting a semiconductor pellet through an insulating layer on a heat dissipating plate. CONSTITUTION:A film 3 made of SiO2, Si3N4 or the like for protecting a pn junction is coated on the surface of a semiconductor pellet 1 formed with a diffused region, openings are perforated at the film 3, and electrode lead wires 2 are mounted therethrough on the diffused region and the surface of a substrate, respectively. When a heat dissipating plate 5 is mounted on the back surface of the pellet 1, a groove 1a is etched at the peripheral edge on the lower surface of the pellet, and an insulating layer 3a of SiO2, Si3N4 or the like is coated on the entire back surface including the groove 1a. Thereafter, the plate 5 is then secured onto the layer 3a using a Ti.Ag solder layer 7. In this configuration a raised portion may be formed on the plate 5 instead of the groove 1a on the lower surface of the pellet 1. Since normal ceramic plate is not employed as an insulating layer in both cases, it can enhance the heat dissipating effect and reduce its cost.
JP3601379A 1979-03-27 1979-03-27 Insulating type semiconductor device Pending JPS55128852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3601379A JPS55128852A (en) 1979-03-27 1979-03-27 Insulating type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3601379A JPS55128852A (en) 1979-03-27 1979-03-27 Insulating type semiconductor device

Publications (1)

Publication Number Publication Date
JPS55128852A true JPS55128852A (en) 1980-10-06

Family

ID=12457858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3601379A Pending JPS55128852A (en) 1979-03-27 1979-03-27 Insulating type semiconductor device

Country Status (1)

Country Link
JP (1) JPS55128852A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022843U (en) * 1983-07-14 1985-02-16 富士電機株式会社 semiconductor equipment
US5151777A (en) * 1989-03-03 1992-09-29 Delco Electronics Corporation Interface device for thermally coupling an integrated circuit to a heat sink
US5455453A (en) * 1991-07-01 1995-10-03 Sumitomo Electric Industries, Ltd. Plastic package type semiconductor device having a rolled metal substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022843U (en) * 1983-07-14 1985-02-16 富士電機株式会社 semiconductor equipment
US5151777A (en) * 1989-03-03 1992-09-29 Delco Electronics Corporation Interface device for thermally coupling an integrated circuit to a heat sink
US5455453A (en) * 1991-07-01 1995-10-03 Sumitomo Electric Industries, Ltd. Plastic package type semiconductor device having a rolled metal substrate
US5643834A (en) * 1991-07-01 1997-07-01 Sumitomo Electric Industries, Ltd. Process for manufacturing a semiconductor substrate comprising laminated copper, silicon oxide and silicon nitride layers

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