JPS57145316A - Manufacture of semicondcutor device - Google Patents
Manufacture of semicondcutor deviceInfo
- Publication number
- JPS57145316A JPS57145316A JP3104581A JP3104581A JPS57145316A JP S57145316 A JPS57145316 A JP S57145316A JP 3104581 A JP3104581 A JP 3104581A JP 3104581 A JP3104581 A JP 3104581A JP S57145316 A JPS57145316 A JP S57145316A
- Authority
- JP
- Japan
- Prior art keywords
- film
- distance
- groove
- 6mum
- grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To increase a crystallinity of a semiconductor layer and improve the feature of an element in the layer by a method wherein an energy beam having the diameter greater than a groove provided on a semiconductor performs a scanning along the groove length at a step equal to the beam distance or of an integral fold thereof to provide an irradiation annealing. CONSTITUTION:SiO2 film 102 available for an insulation film is formed on the surface of a single crystal silicon substrate 101 on which a desirable element is formed. Subsequently, a grating 103 consisting of grooves having the V-shaped cross-section of width of 6mum and depth of 4mum substantially is formed linearly on the surface of the film 102 and a polycrystal silicon film 104 of thickness of 1mum substantially is covere over the film. Subsequently, an electron beam having a spot diameter of 70-80mum is irradiated from the upper position performs a column shift in accordance with the distance of 6mum of the grating 103. One groove is scanned by the beam over 10 times to be annealed by reducing the column shift distance at 1/10 of the spot diameter or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3104581A JPS57145316A (en) | 1981-03-04 | 1981-03-04 | Manufacture of semicondcutor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3104581A JPS57145316A (en) | 1981-03-04 | 1981-03-04 | Manufacture of semicondcutor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57145316A true JPS57145316A (en) | 1982-09-08 |
Family
ID=12320504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3104581A Pending JPS57145316A (en) | 1981-03-04 | 1981-03-04 | Manufacture of semicondcutor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57145316A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2517123A1 (en) * | 1981-11-26 | 1983-05-27 | Mitsubishi Electric Corp | METHOD FOR FORMING A SINGLE-CRYSTAL SEMICONDUCTOR FILM ON AN INSULATOR |
JPS61241909A (en) * | 1985-04-19 | 1986-10-28 | Agency Of Ind Science & Technol | Formation of soi crystal |
JP2004343007A (en) * | 2003-05-19 | 2004-12-02 | Hitachi Cable Ltd | Method of manufacturing crystalline silicon thin film |
JP2008166738A (en) * | 2006-12-04 | 2008-07-17 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
-
1981
- 1981-03-04 JP JP3104581A patent/JPS57145316A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2517123A1 (en) * | 1981-11-26 | 1983-05-27 | Mitsubishi Electric Corp | METHOD FOR FORMING A SINGLE-CRYSTAL SEMICONDUCTOR FILM ON AN INSULATOR |
JPS61241909A (en) * | 1985-04-19 | 1986-10-28 | Agency Of Ind Science & Technol | Formation of soi crystal |
JPH0351289B2 (en) * | 1985-04-19 | 1991-08-06 | Kogyo Gijutsuin | |
JP2004343007A (en) * | 2003-05-19 | 2004-12-02 | Hitachi Cable Ltd | Method of manufacturing crystalline silicon thin film |
JP2008166738A (en) * | 2006-12-04 | 2008-07-17 | Semiconductor Energy Lab Co Ltd | Method for manufacturing semiconductor device |
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