JPS5735354A - Sealing method for semiconductor housing container - Google Patents
Sealing method for semiconductor housing containerInfo
- Publication number
- JPS5735354A JPS5735354A JP11123980A JP11123980A JPS5735354A JP S5735354 A JPS5735354 A JP S5735354A JP 11123980 A JP11123980 A JP 11123980A JP 11123980 A JP11123980 A JP 11123980A JP S5735354 A JPS5735354 A JP S5735354A
- Authority
- JP
- Japan
- Prior art keywords
- sealing
- leads
- constitution
- cap
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
PURPOSE:To enhance reliability of a high frequency, high power transistor, by providing an insulating material whose thickness is the same as leads between the external leads provided on a substrate, on which semiconductor elements are mounted, and providing the sealing by a cap. CONSTITUTION:A metalized layer 3 of Mo-Mn is formed and the external leads 2 comprising Kovar and the like are provided on substrate 1 of BeO and the like. The emiconductor elements such as the high frequency, high power transistor are mounted on the metalized layer 3. In the gap between said leads 2, the insulating materials 10 whose thickness is the same as that of the lead 2 are provided, and the sealing part is flattened. Then, sealing is performed by the cap with bonding resin. In this constitution, pin holes are not generated even though internal pressure becomes high, and the perfect sealing can be accomplished. Therefore the reliability of the transistor can be enhanced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11123980A JPS5735354A (en) | 1980-08-13 | 1980-08-13 | Sealing method for semiconductor housing container |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11123980A JPS5735354A (en) | 1980-08-13 | 1980-08-13 | Sealing method for semiconductor housing container |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5735354A true JPS5735354A (en) | 1982-02-25 |
Family
ID=14556096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11123980A Pending JPS5735354A (en) | 1980-08-13 | 1980-08-13 | Sealing method for semiconductor housing container |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5735354A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6020146U (en) * | 1983-07-20 | 1985-02-12 | 日本電気株式会社 | Hybrid integrated circuit device |
JPH0358593U (en) * | 1989-10-11 | 1991-06-07 |
-
1980
- 1980-08-13 JP JP11123980A patent/JPS5735354A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6020146U (en) * | 1983-07-20 | 1985-02-12 | 日本電気株式会社 | Hybrid integrated circuit device |
JPS6334277Y2 (en) * | 1983-07-20 | 1988-09-12 | ||
JPH0358593U (en) * | 1989-10-11 | 1991-06-07 |
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