JPS56112782A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS56112782A
JPS56112782A JP1452480A JP1452480A JPS56112782A JP S56112782 A JPS56112782 A JP S56112782A JP 1452480 A JP1452480 A JP 1452480A JP 1452480 A JP1452480 A JP 1452480A JP S56112782 A JPS56112782 A JP S56112782A
Authority
JP
Japan
Prior art keywords
layer
face
type
active layer
clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1452480A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1452480A priority Critical patent/JPS56112782A/en
Publication of JPS56112782A publication Critical patent/JPS56112782A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the deterioration of the end face buried type semiconductor laser due to the mutual action between the light and the semiconductor material at the end face of the active layer of the laser by burying the end face of the active layer having a larger forbidden band width than the active layer. CONSTITUTION:An N type Al0.3Ga0.7As clad layer 12 and an N type Al0.15Ga0.85As light waveguide layer 13 are formed in stripe shape on an N type GaAs semiconductor substrate 11. A P type GaAs active layer 14 and a P type Al0.3Ga0.7As clad layer 15 are formed in stripe shape on the region isolated from the end face of the light emitting surface of the layer 13. Further, an N type Al0.3Ga0.7As clad layer 16 are so formed as to surround the layer 12, the layer 13, the active layer 14 and the clad layer 15 excluding the end face of the light emitting surface of the layer 13, thereby obtaining the secondary light waveguide function even in the buried portion of the end face of the layer 14.
JP1452480A 1980-02-08 1980-02-08 Semiconductor laser Pending JPS56112782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1452480A JPS56112782A (en) 1980-02-08 1980-02-08 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1452480A JPS56112782A (en) 1980-02-08 1980-02-08 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56112782A true JPS56112782A (en) 1981-09-05

Family

ID=11863493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1452480A Pending JPS56112782A (en) 1980-02-08 1980-02-08 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56112782A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102586A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
JPS5952894A (en) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp Semiconductor laser
EP0174635A2 (en) * 1984-09-14 1986-03-19 Siemens Aktiengesellschaft Semiconductor laser for a high optical output power with reduced mirror heating
JPS6399590A (en) * 1986-10-15 1988-04-30 Mitsubishi Electric Corp Manunfacture of semiconductor laser
DE3924197A1 (en) * 1988-07-22 1990-04-05 Mitsubishi Electric Corp SEMICONDUCTOR LASER
US5345460A (en) * 1991-09-06 1994-09-06 Sharp Kabushiki Kaisha Semiconductor laser device with window regions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104843A (en) * 1975-03-11 1976-09-17 Western Electric Co
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104843A (en) * 1975-03-11 1976-09-17 Western Electric Co
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102586A (en) * 1981-12-14 1983-06-18 Fujitsu Ltd Semiconductor light emitting device
JPS5952894A (en) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp Semiconductor laser
EP0174635A2 (en) * 1984-09-14 1986-03-19 Siemens Aktiengesellschaft Semiconductor laser for a high optical output power with reduced mirror heating
JPS6399590A (en) * 1986-10-15 1988-04-30 Mitsubishi Electric Corp Manunfacture of semiconductor laser
DE3924197A1 (en) * 1988-07-22 1990-04-05 Mitsubishi Electric Corp SEMICONDUCTOR LASER
DE3924197C2 (en) * 1988-07-22 1996-09-26 Mitsubishi Electric Corp Semiconductor laser
US5345460A (en) * 1991-09-06 1994-09-06 Sharp Kabushiki Kaisha Semiconductor laser device with window regions

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