JPS5624987A - Gaas infrared ray emitting diode and manufacture thereof - Google Patents
Gaas infrared ray emitting diode and manufacture thereofInfo
- Publication number
- JPS5624987A JPS5624987A JP10197879A JP10197879A JPS5624987A JP S5624987 A JPS5624987 A JP S5624987A JP 10197879 A JP10197879 A JP 10197879A JP 10197879 A JP10197879 A JP 10197879A JP S5624987 A JPS5624987 A JP S5624987A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- added
- gaas
- type gaas
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 2
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- 229910001297 Zn alloy Inorganic materials 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain an LED having high light emitting efficiency and high response speed by superimposing Si-added GaAs onto Si-added n type GaAs and laminating further p type GaAs and Ga1-xAlxAs thereon. CONSTITUTION:Si-added n type GaAs layer 12, Zn-added p type GaAs 13a and p type Ga1-xAlxAs 13b having the same thickness as the GaAs 13a are laminated on an Si-added n+ type GaAs substrate 11. An Au-Zn alloy electrode 15 is attached onto the layer 13, and an Au-Ge alloy electrode 14 is attached onto the substrate 11. In this configuration, electrons injected to the P-N junction 16 are enclosed in the layer 13a through potential barrier of the hetero boundary between the layers 13a and 13b to reduce the recombination of the non-radiation on the surface. Accordingly, light is efficiently emitted in the layer 13a, the layer 13b is transparent to reduce the decrease of the efficiency. Therefore, the light emitting response speed may be increased by reducing the thickness of the active layer 13a.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10197879A JPS5624987A (en) | 1979-08-08 | 1979-08-08 | Gaas infrared ray emitting diode and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10197879A JPS5624987A (en) | 1979-08-08 | 1979-08-08 | Gaas infrared ray emitting diode and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5624987A true JPS5624987A (en) | 1981-03-10 |
Family
ID=14314939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10197879A Pending JPS5624987A (en) | 1979-08-08 | 1979-08-08 | Gaas infrared ray emitting diode and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5624987A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0115204A2 (en) * | 1982-12-27 | 1984-08-08 | Mitsubishi Kasei Polytec Company | Epitaxial wafer for use in the production of an infrared LED |
JPH02251179A (en) * | 1989-03-24 | 1990-10-08 | Nichia Chem Ind Ltd | Epitaxial wafer |
WO1991006139A1 (en) * | 1989-10-20 | 1991-05-02 | Australian Electro Optics Pty. Ltd. | Diode pumped segmented fibre bundle coupled conical rod laser system |
-
1979
- 1979-08-08 JP JP10197879A patent/JPS5624987A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0115204A2 (en) * | 1982-12-27 | 1984-08-08 | Mitsubishi Kasei Polytec Company | Epitaxial wafer for use in the production of an infrared LED |
JPH02251179A (en) * | 1989-03-24 | 1990-10-08 | Nichia Chem Ind Ltd | Epitaxial wafer |
WO1991006139A1 (en) * | 1989-10-20 | 1991-05-02 | Australian Electro Optics Pty. Ltd. | Diode pumped segmented fibre bundle coupled conical rod laser system |
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