JPS57169994A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS57169994A
JPS57169994A JP56048620A JP4862081A JPS57169994A JP S57169994 A JPS57169994 A JP S57169994A JP 56048620 A JP56048620 A JP 56048620A JP 4862081 A JP4862081 A JP 4862081A JP S57169994 A JPS57169994 A JP S57169994A
Authority
JP
Japan
Prior art keywords
readout
bit line
current
level
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56048620A
Other languages
Japanese (ja)
Other versions
JPS6149757B2 (en
Inventor
Hiroshi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56048620A priority Critical patent/JPS57169994A/en
Publication of JPS57169994A publication Critical patent/JPS57169994A/en
Publication of JPS6149757B2 publication Critical patent/JPS6149757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To quicken the movement of bit lines at readout and to increase the readout speed, by connecting bit lines only at readout via transistors. CONSTITUTION:Between bit lines D1 and DB1 of an FF type static RAM cell CE1 or the like formed with semiconductors, a transistor Q9 which is conductive with the output from a write enable circuit only at readout. Then, a current I2 flows through the transistor Q9. On the other hand, when the level of the bit line DB1 changes from high to low level with a current I1 flowing to the cell CE1, the inversion from the high to low level of the bit line DB1 is quickly done with the discharge to the bit line D1 with the current I2. Similarly, the inversion from the low to high level of the bit line D1 can quickly be done with the currents I1 and I2. The readout speed can be increased by quick movement of the bit line at the readout. Further, this is similar when the data bus lines are connected at readout.
JP56048620A 1981-03-31 1981-03-31 Semiconductor storage device Granted JPS57169994A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56048620A JPS57169994A (en) 1981-03-31 1981-03-31 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56048620A JPS57169994A (en) 1981-03-31 1981-03-31 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS57169994A true JPS57169994A (en) 1982-10-19
JPS6149757B2 JPS6149757B2 (en) 1986-10-30

Family

ID=12808444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56048620A Granted JPS57169994A (en) 1981-03-31 1981-03-31 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS57169994A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251590A (en) * 1984-05-25 1985-12-12 Toshiba Corp Semiconductor memory
JPS62145595A (en) * 1985-12-20 1987-06-29 Toshiba Corp Semiconductor memory device
FR2610135A1 (en) * 1987-01-28 1988-07-29 Cypress Semiconductor Corp SEMICONDUCTOR MEMORY WITH DIFFERENTIAL DATA LINES
JPH01119982A (en) * 1987-10-31 1989-05-12 Toshiba Corp Static type random access memory
JPH0729370A (en) * 1990-10-16 1995-01-31 Samsung Electron Co Ltd Circuit and method for equalization of data line of static ram

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251590A (en) * 1984-05-25 1985-12-12 Toshiba Corp Semiconductor memory
JPS62145595A (en) * 1985-12-20 1987-06-29 Toshiba Corp Semiconductor memory device
FR2610135A1 (en) * 1987-01-28 1988-07-29 Cypress Semiconductor Corp SEMICONDUCTOR MEMORY WITH DIFFERENTIAL DATA LINES
JPH01119982A (en) * 1987-10-31 1989-05-12 Toshiba Corp Static type random access memory
JPH0729370A (en) * 1990-10-16 1995-01-31 Samsung Electron Co Ltd Circuit and method for equalization of data line of static ram

Also Published As

Publication number Publication date
JPS6149757B2 (en) 1986-10-30

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