JPS57169246A - Dielectric epitaxial film material - Google Patents
Dielectric epitaxial film materialInfo
- Publication number
- JPS57169246A JPS57169246A JP5404281A JP5404281A JPS57169246A JP S57169246 A JPS57169246 A JP S57169246A JP 5404281 A JP5404281 A JP 5404281A JP 5404281 A JP5404281 A JP 5404281A JP S57169246 A JPS57169246 A JP S57169246A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- lattice constant
- epitaxial film
- growing
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 abstract 2
- 239000011029 spinel Substances 0.000 abstract 2
- 229910052596 spinel Inorganic materials 0.000 abstract 2
- 229910021577 Iron(II) chloride Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229960002089 ferrous chloride Drugs 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Compounds Of Iron (AREA)
Abstract
PURPOSE:To obtain an epitaxial film having excellent lattice matching property making the lattice constant of spinel type crystal structure specified value in the spinel type crystal structure growing on a Si single crystal substrate in epitaxial form. CONSTITUTION:A reaction pipe is composed of two quartz pipes of an outer pipe 1 with a 70mm. inside diameter and an inner pipe 2 with a 50mm. inside diameter according to a double pipe system in order to grow Al2FeO4 on the Si single crystal substrate in gaseous-phase epitaxial form, metallic aluminum is positioned at the internal location 3 of the inner pipe 20 and ferrous chloride at a location 4, Al is brought to 600 deg.C and FeCl2 to 650 deg.C, and the Si crystal substrate 7 is placed onto a substrate holder 6 in a growing chamber 5. The temperature of the substrate 7 is brought to 1,030 deg.C, a growing face is made 100, and H2 is flowed at 10l/min and HCl at 20cc/min from an inlet 8 and H2 at 1l/min and CO2 at 100cc/min from an inlet 9 in the flow rate of the gases, thus obtaining the epitaxial film having a lattice constant larger than a 8.08Angstrom lattice constant.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5404281A JPS57169246A (en) | 1981-04-10 | 1981-04-10 | Dielectric epitaxial film material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5404281A JPS57169246A (en) | 1981-04-10 | 1981-04-10 | Dielectric epitaxial film material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57169246A true JPS57169246A (en) | 1982-10-18 |
Family
ID=12959535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5404281A Pending JPS57169246A (en) | 1981-04-10 | 1981-04-10 | Dielectric epitaxial film material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57169246A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60194530A (en) * | 1984-03-16 | 1985-10-03 | Toshiba Corp | Manufacture of semiconductor device |
JPH0940427A (en) * | 1995-07-26 | 1997-02-10 | Agency Of Ind Science & Technol | Compound metal oxide film |
JP2016146495A (en) * | 2010-03-18 | 2016-08-12 | 株式会社リコー | Coating liquid for forming insulator film, insulator film, manufacturing method for insulator film, and manufacturing method for semiconductor device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3414434A (en) * | 1965-06-30 | 1968-12-03 | North American Rockwell | Single crystal silicon on spinel insulators |
US3655439A (en) * | 1968-06-19 | 1972-04-11 | Siemens Ag | Method of producing thin layer components with at least one insulating intermediate layer |
JPS5012970A (en) * | 1973-05-25 | 1975-02-10 |
-
1981
- 1981-04-10 JP JP5404281A patent/JPS57169246A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3414434A (en) * | 1965-06-30 | 1968-12-03 | North American Rockwell | Single crystal silicon on spinel insulators |
US3655439A (en) * | 1968-06-19 | 1972-04-11 | Siemens Ag | Method of producing thin layer components with at least one insulating intermediate layer |
JPS5012970A (en) * | 1973-05-25 | 1975-02-10 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60194530A (en) * | 1984-03-16 | 1985-10-03 | Toshiba Corp | Manufacture of semiconductor device |
JPH0940427A (en) * | 1995-07-26 | 1997-02-10 | Agency Of Ind Science & Technol | Compound metal oxide film |
JP2016146495A (en) * | 2010-03-18 | 2016-08-12 | 株式会社リコー | Coating liquid for forming insulator film, insulator film, manufacturing method for insulator film, and manufacturing method for semiconductor device |
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