JPS6483597A - Method for vapor growth of compound semiconductor - Google Patents

Method for vapor growth of compound semiconductor

Info

Publication number
JPS6483597A
JPS6483597A JP24213987A JP24213987A JPS6483597A JP S6483597 A JPS6483597 A JP S6483597A JP 24213987 A JP24213987 A JP 24213987A JP 24213987 A JP24213987 A JP 24213987A JP S6483597 A JPS6483597 A JP S6483597A
Authority
JP
Japan
Prior art keywords
raw material
solid
group
substrate
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24213987A
Other languages
Japanese (ja)
Inventor
Chiaki Sasaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24213987A priority Critical patent/JPS6483597A/en
Publication of JPS6483597A publication Critical patent/JPS6483597A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a high-purity epitaxial film with excellent safety, by using vapor of solid As or solid P as a group V raw material in alternately feeding a group III raw material of the period table and group V raw material of the periodic table onto a single crystal substrate and growing a crystal. CONSTITUTION:For example, a sold raw material 11 (e.g. solid As) of a group V element of the periodic table is placed in a quartz boat 12 kept at 350-450 deg.C and a valve 13 is opened. A valve 14 is then closed to heat the solid raw material 11 in a hot wall furnace to feed vapor of the solid raw material 11 into a reaction tube 15. On the other hand, a group III raw material (e.g. diethylgallium chloride) at a given flow rate is fed into the reaction tube 15 by blowing H2 carrier gas into a bubbler 18 for the diethylgallium chloride. The above-mentioned operation is repeated specific times to alternately feed both and grow a high-epitaxial film at 450-550 deg.C growth temperature on a substrate crystal 19, such as semi-insulating (100) GaAs, placed on a substrate susceptor 22.
JP24213987A 1987-09-25 1987-09-25 Method for vapor growth of compound semiconductor Pending JPS6483597A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24213987A JPS6483597A (en) 1987-09-25 1987-09-25 Method for vapor growth of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24213987A JPS6483597A (en) 1987-09-25 1987-09-25 Method for vapor growth of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS6483597A true JPS6483597A (en) 1989-03-29

Family

ID=17084892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24213987A Pending JPS6483597A (en) 1987-09-25 1987-09-25 Method for vapor growth of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS6483597A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254210A (en) * 1992-04-27 1993-10-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for growing semiconductor heterostructures
US5429068A (en) * 1992-10-20 1995-07-04 Fujitsu Limited Deposition method for compound semiconductor forming device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5254210A (en) * 1992-04-27 1993-10-19 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for growing semiconductor heterostructures
US5429068A (en) * 1992-10-20 1995-07-04 Fujitsu Limited Deposition method for compound semiconductor forming device

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