JPS6483597A - Method for vapor growth of compound semiconductor - Google Patents
Method for vapor growth of compound semiconductorInfo
- Publication number
- JPS6483597A JPS6483597A JP24213987A JP24213987A JPS6483597A JP S6483597 A JPS6483597 A JP S6483597A JP 24213987 A JP24213987 A JP 24213987A JP 24213987 A JP24213987 A JP 24213987A JP S6483597 A JPS6483597 A JP S6483597A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- solid
- group
- substrate
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To obtain a high-purity epitaxial film with excellent safety, by using vapor of solid As or solid P as a group V raw material in alternately feeding a group III raw material of the period table and group V raw material of the periodic table onto a single crystal substrate and growing a crystal. CONSTITUTION:For example, a sold raw material 11 (e.g. solid As) of a group V element of the periodic table is placed in a quartz boat 12 kept at 350-450 deg.C and a valve 13 is opened. A valve 14 is then closed to heat the solid raw material 11 in a hot wall furnace to feed vapor of the solid raw material 11 into a reaction tube 15. On the other hand, a group III raw material (e.g. diethylgallium chloride) at a given flow rate is fed into the reaction tube 15 by blowing H2 carrier gas into a bubbler 18 for the diethylgallium chloride. The above-mentioned operation is repeated specific times to alternately feed both and grow a high-epitaxial film at 450-550 deg.C growth temperature on a substrate crystal 19, such as semi-insulating (100) GaAs, placed on a substrate susceptor 22.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24213987A JPS6483597A (en) | 1987-09-25 | 1987-09-25 | Method for vapor growth of compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24213987A JPS6483597A (en) | 1987-09-25 | 1987-09-25 | Method for vapor growth of compound semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6483597A true JPS6483597A (en) | 1989-03-29 |
Family
ID=17084892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24213987A Pending JPS6483597A (en) | 1987-09-25 | 1987-09-25 | Method for vapor growth of compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6483597A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5254210A (en) * | 1992-04-27 | 1993-10-19 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for growing semiconductor heterostructures |
US5429068A (en) * | 1992-10-20 | 1995-07-04 | Fujitsu Limited | Deposition method for compound semiconductor forming device |
-
1987
- 1987-09-25 JP JP24213987A patent/JPS6483597A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5254210A (en) * | 1992-04-27 | 1993-10-19 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for growing semiconductor heterostructures |
US5429068A (en) * | 1992-10-20 | 1995-07-04 | Fujitsu Limited | Deposition method for compound semiconductor forming device |
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