JPS57160993A - Heteroepitaxial growing method - Google Patents
Heteroepitaxial growing methodInfo
- Publication number
- JPS57160993A JPS57160993A JP4416481A JP4416481A JPS57160993A JP S57160993 A JPS57160993 A JP S57160993A JP 4416481 A JP4416481 A JP 4416481A JP 4416481 A JP4416481 A JP 4416481A JP S57160993 A JPS57160993 A JP S57160993A
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- substrate
- silicon
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4416481A JPS57160993A (en) | 1981-03-27 | 1981-03-27 | Heteroepitaxial growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4416481A JPS57160993A (en) | 1981-03-27 | 1981-03-27 | Heteroepitaxial growing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57160993A true JPS57160993A (en) | 1982-10-04 |
JPS6229397B2 JPS6229397B2 (ja) | 1987-06-25 |
Family
ID=12683947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4416481A Granted JPS57160993A (en) | 1981-03-27 | 1981-03-27 | Heteroepitaxial growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57160993A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2751963B2 (ja) † | 1992-06-10 | 1998-05-18 | 日亜化学工業株式会社 | 窒化インジウムガリウム半導体の成長方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5430872A (en) * | 1977-08-12 | 1979-03-07 | Hope Henry F | Device of measuring area of slender strip material |
-
1981
- 1981-03-27 JP JP4416481A patent/JPS57160993A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5430872A (en) * | 1977-08-12 | 1979-03-07 | Hope Henry F | Device of measuring area of slender strip material |
Also Published As
Publication number | Publication date |
---|---|
JPS6229397B2 (ja) | 1987-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52140267A (en) | Vapor epitaxial crystal growing device | |
EP0285358A3 (en) | Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same | |
EP0253611A3 (en) | Method of epitaxially growing gallium arsenide on silicon | |
JPS56138917A (en) | Vapor phase epitaxial growth | |
JPS57160993A (en) | Heteroepitaxial growing method | |
JPS56160400A (en) | Growing method for gallium nitride | |
JPS54157779A (en) | Production of silicon single crystal | |
JPS5659700A (en) | Forming method for gallium nitride single crystal thin film | |
JPS5469062A (en) | Vapor growth method for magnespinel | |
JPS54152465A (en) | Manufacture of epitaxial wafer | |
JPS54106081A (en) | Growth method in vapor phase | |
JPS57200291A (en) | Vapor-phase growing method of compound semiconductor | |
JPS57196794A (en) | Epitaxial growth method | |
JPS5461463A (en) | Vapor phase growth method for semiconductor | |
JPS5571696A (en) | Vapor phase epitaxial growing device | |
KR940014929A (ko) | 다공성 실리콘기판 위에 갈륨비소를 성장하는 방법 | |
JPS5553415A (en) | Selective epitaxial growing | |
JPS5234668A (en) | Gaseous phase growing process of semiconductor | |
JPS561525A (en) | Epitaxial growing method of silicon crystal | |
JPS5727999A (en) | Vapor phase growing method for gan | |
JPS6411321A (en) | Manufacture of silicon single-crystal thin film | |
ERSTFELD | Method for the preparation of epitaxial films of mercury cadmium telluride[Patent] | |
JPS54139467A (en) | Method and apparatus for vapor epitaxial growth | |
KOBA | Synthesis of large area, monocrystalline TiC as a substrate for heteroepitaxial growth of beta-SiC(Final Report, 7 Sep. 1989- 30 Jun. 1990) | |
JPS6477118A (en) | Manufacture of ga1-xalxas epitaxial wafer |