JPS6477118A - Manufacture of ga1-xalxas epitaxial wafer - Google Patents
Manufacture of ga1-xalxas epitaxial waferInfo
- Publication number
- JPS6477118A JPS6477118A JP23264787A JP23264787A JPS6477118A JP S6477118 A JPS6477118 A JP S6477118A JP 23264787 A JP23264787 A JP 23264787A JP 23264787 A JP23264787 A JP 23264787A JP S6477118 A JPS6477118 A JP S6477118A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- xalxas
- grown
- epitaxial
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To reduce the degree of curvature of a wafer by a method wherein, after a Ga1-xAlx As epitaxial layer having specific Al mixed crystal ratio has been grown using a liquid growth epitaxial method, a GaAs epitaxial layer is continuously grown thereon. CONSTITUTION:A Ga1-xAlx As epitaxial layer 2, having an Al mixed crystal ratio of 0.4 is grown on a GaAs substrate 1 of 300mum in thickness using a liquid growth epitaxial device, it is melted off, and then a GaAs epitaxial layer 3 of 100mum is grown thereon successively. As a result, the extent of the curvature of the Ga1-xAlxAs epitaxial wafer becomes 50mum or less, and no cracks are generated on the surface. Also, the GaAs substrate 1 is removed by grinding, the curvature of the Ga1-xAlxAs epitaxial layer 2 and the GaAs epitaxial layer 3 become as small as 60mum or thereabout.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23264787A JPS6477118A (en) | 1987-09-18 | 1987-09-18 | Manufacture of ga1-xalxas epitaxial wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23264787A JPS6477118A (en) | 1987-09-18 | 1987-09-18 | Manufacture of ga1-xalxas epitaxial wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477118A true JPS6477118A (en) | 1989-03-23 |
Family
ID=16942569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23264787A Pending JPS6477118A (en) | 1987-09-18 | 1987-09-18 | Manufacture of ga1-xalxas epitaxial wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477118A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5064780A (en) * | 1988-03-29 | 1991-11-12 | U.S. Philips Corporation | Method of obtaining a ternary monocrystalline layer by means of hetero-epitaxy on a binary layer and a crucible suitable for putting the method into effect |
JP2010232622A (en) * | 2008-06-03 | 2010-10-14 | Sumitomo Electric Ind Ltd | AlxGa(1-x)As SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF AlxGa(1-x)As SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED |
-
1987
- 1987-09-18 JP JP23264787A patent/JPS6477118A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5064780A (en) * | 1988-03-29 | 1991-11-12 | U.S. Philips Corporation | Method of obtaining a ternary monocrystalline layer by means of hetero-epitaxy on a binary layer and a crucible suitable for putting the method into effect |
JP2010232622A (en) * | 2008-06-03 | 2010-10-14 | Sumitomo Electric Ind Ltd | AlxGa(1-x)As SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF AlxGa(1-x)As SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED |
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