JPS6477118A - Manufacture of ga1-xalxas epitaxial wafer - Google Patents

Manufacture of ga1-xalxas epitaxial wafer

Info

Publication number
JPS6477118A
JPS6477118A JP23264787A JP23264787A JPS6477118A JP S6477118 A JPS6477118 A JP S6477118A JP 23264787 A JP23264787 A JP 23264787A JP 23264787 A JP23264787 A JP 23264787A JP S6477118 A JPS6477118 A JP S6477118A
Authority
JP
Japan
Prior art keywords
epitaxial layer
xalxas
grown
epitaxial
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23264787A
Other languages
Japanese (ja)
Inventor
Yukio Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP23264787A priority Critical patent/JPS6477118A/en
Publication of JPS6477118A publication Critical patent/JPS6477118A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To reduce the degree of curvature of a wafer by a method wherein, after a Ga1-xAlx As epitaxial layer having specific Al mixed crystal ratio has been grown using a liquid growth epitaxial method, a GaAs epitaxial layer is continuously grown thereon. CONSTITUTION:A Ga1-xAlx As epitaxial layer 2, having an Al mixed crystal ratio of 0.4 is grown on a GaAs substrate 1 of 300mum in thickness using a liquid growth epitaxial device, it is melted off, and then a GaAs epitaxial layer 3 of 100mum is grown thereon successively. As a result, the extent of the curvature of the Ga1-xAlxAs epitaxial wafer becomes 50mum or less, and no cracks are generated on the surface. Also, the GaAs substrate 1 is removed by grinding, the curvature of the Ga1-xAlxAs epitaxial layer 2 and the GaAs epitaxial layer 3 become as small as 60mum or thereabout.
JP23264787A 1987-09-18 1987-09-18 Manufacture of ga1-xalxas epitaxial wafer Pending JPS6477118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23264787A JPS6477118A (en) 1987-09-18 1987-09-18 Manufacture of ga1-xalxas epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23264787A JPS6477118A (en) 1987-09-18 1987-09-18 Manufacture of ga1-xalxas epitaxial wafer

Publications (1)

Publication Number Publication Date
JPS6477118A true JPS6477118A (en) 1989-03-23

Family

ID=16942569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23264787A Pending JPS6477118A (en) 1987-09-18 1987-09-18 Manufacture of ga1-xalxas epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS6477118A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5064780A (en) * 1988-03-29 1991-11-12 U.S. Philips Corporation Method of obtaining a ternary monocrystalline layer by means of hetero-epitaxy on a binary layer and a crucible suitable for putting the method into effect
JP2010232622A (en) * 2008-06-03 2010-10-14 Sumitomo Electric Ind Ltd AlxGa(1-x)As SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF AlxGa(1-x)As SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5064780A (en) * 1988-03-29 1991-11-12 U.S. Philips Corporation Method of obtaining a ternary monocrystalline layer by means of hetero-epitaxy on a binary layer and a crucible suitable for putting the method into effect
JP2010232622A (en) * 2008-06-03 2010-10-14 Sumitomo Electric Ind Ltd AlxGa(1-x)As SUBSTRATE, EPITAXIAL WAFER FOR INFRARED LED, INFRARED LED, METHOD FOR PRODUCTION OF AlxGa(1-x)As SUBSTRATE, METHOD FOR PRODUCTION OF EPITAXIAL WAFER FOR INFRARED LED, AND METHOD FOR PRODUCTION OF INFRARED LED

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