JPS5721853A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5721853A JPS5721853A JP9574480A JP9574480A JPS5721853A JP S5721853 A JPS5721853 A JP S5721853A JP 9574480 A JP9574480 A JP 9574480A JP 9574480 A JP9574480 A JP 9574480A JP S5721853 A JPS5721853 A JP S5721853A
- Authority
- JP
- Japan
- Prior art keywords
- diffused layer
- base
- type diffused
- type
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 101100086495 Candida albicans (strain SC5314 / ATCC MYA-2876) RBE1 gene Proteins 0.000 abstract 1
- 101100068466 Oryza sativa subsp. japonica SBE1 gene Proteins 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the number of steps of manufacturing a semiconductor device and to save the material cost of the device by forming Darlington connection transistors and speedup diode on semiconductor chip. CONSTITUTION:A collector electrode C is formed via an n<+> type diffused layer 2 on the bottom surface of an n<-> type si substrate 1 becoming a collector. One (3a) of a p type diffused layer 3 is connected to a part of a base (B) of a drive stage transistor Q1, and the other (3b) is connected to the base (B') of an output stage transistor Q2. A diode Di of p-n<+> junction is formed by forming an n<+> type diffused layer 4 on the surface of the p type diffused layer 3, shortcircuitting the base B via an aluminum film 5 with the one side (Q1 side) and forming an aluminum film 6 connected to the base of the transistor Q2, and the p type layer under the n<+> type diffused layer 4 is used as a resistor RBE1. Accordingly, transistors connected in Darlington connection and bypass diode for the stored charge can be formed in one chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9574480A JPS5721853A (en) | 1980-07-15 | 1980-07-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9574480A JPS5721853A (en) | 1980-07-15 | 1980-07-15 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5721853A true JPS5721853A (en) | 1982-02-04 |
Family
ID=14145993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9574480A Pending JPS5721853A (en) | 1980-07-15 | 1980-07-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5721853A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4811074A (en) * | 1984-09-27 | 1989-03-07 | Siemens Aktiengesellschaft | Darlington circuit comprising a field effect transistor and a bipolar output transistor |
US6249776B1 (en) * | 1998-09-22 | 2001-06-19 | International Business Machines Corporation | Methodology for proper weighting of photolithography in the cost of semiconductor products |
US6324527B1 (en) * | 1998-09-22 | 2001-11-27 | International Business Machines Corporation | Methodology for distinguishing the cost of products in a multiple part number, multiple technology, fully or partially loaded semiconductor fabricator |
-
1980
- 1980-07-15 JP JP9574480A patent/JPS5721853A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4811074A (en) * | 1984-09-27 | 1989-03-07 | Siemens Aktiengesellschaft | Darlington circuit comprising a field effect transistor and a bipolar output transistor |
US6249776B1 (en) * | 1998-09-22 | 2001-06-19 | International Business Machines Corporation | Methodology for proper weighting of photolithography in the cost of semiconductor products |
US6324527B1 (en) * | 1998-09-22 | 2001-11-27 | International Business Machines Corporation | Methodology for distinguishing the cost of products in a multiple part number, multiple technology, fully or partially loaded semiconductor fabricator |
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