JPS5721853A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5721853A
JPS5721853A JP9574480A JP9574480A JPS5721853A JP S5721853 A JPS5721853 A JP S5721853A JP 9574480 A JP9574480 A JP 9574480A JP 9574480 A JP9574480 A JP 9574480A JP S5721853 A JPS5721853 A JP S5721853A
Authority
JP
Japan
Prior art keywords
diffused layer
base
type diffused
type
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9574480A
Other languages
Japanese (ja)
Inventor
Kazuo Kanbayashi
Masayuki Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9574480A priority Critical patent/JPS5721853A/en
Publication of JPS5721853A publication Critical patent/JPS5721853A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the number of steps of manufacturing a semiconductor device and to save the material cost of the device by forming Darlington connection transistors and speedup diode on semiconductor chip. CONSTITUTION:A collector electrode C is formed via an n<+> type diffused layer 2 on the bottom surface of an n<-> type si substrate 1 becoming a collector. One (3a) of a p type diffused layer 3 is connected to a part of a base (B) of a drive stage transistor Q1, and the other (3b) is connected to the base (B') of an output stage transistor Q2. A diode Di of p-n<+> junction is formed by forming an n<+> type diffused layer 4 on the surface of the p type diffused layer 3, shortcircuitting the base B via an aluminum film 5 with the one side (Q1 side) and forming an aluminum film 6 connected to the base of the transistor Q2, and the p type layer under the n<+> type diffused layer 4 is used as a resistor RBE1. Accordingly, transistors connected in Darlington connection and bypass diode for the stored charge can be formed in one chip.
JP9574480A 1980-07-15 1980-07-15 Semiconductor device Pending JPS5721853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9574480A JPS5721853A (en) 1980-07-15 1980-07-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9574480A JPS5721853A (en) 1980-07-15 1980-07-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5721853A true JPS5721853A (en) 1982-02-04

Family

ID=14145993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9574480A Pending JPS5721853A (en) 1980-07-15 1980-07-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5721853A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4811074A (en) * 1984-09-27 1989-03-07 Siemens Aktiengesellschaft Darlington circuit comprising a field effect transistor and a bipolar output transistor
US6249776B1 (en) * 1998-09-22 2001-06-19 International Business Machines Corporation Methodology for proper weighting of photolithography in the cost of semiconductor products
US6324527B1 (en) * 1998-09-22 2001-11-27 International Business Machines Corporation Methodology for distinguishing the cost of products in a multiple part number, multiple technology, fully or partially loaded semiconductor fabricator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4811074A (en) * 1984-09-27 1989-03-07 Siemens Aktiengesellschaft Darlington circuit comprising a field effect transistor and a bipolar output transistor
US6249776B1 (en) * 1998-09-22 2001-06-19 International Business Machines Corporation Methodology for proper weighting of photolithography in the cost of semiconductor products
US6324527B1 (en) * 1998-09-22 2001-11-27 International Business Machines Corporation Methodology for distinguishing the cost of products in a multiple part number, multiple technology, fully or partially loaded semiconductor fabricator

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