JPS558069A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS558069A JPS558069A JP8115878A JP8115878A JPS558069A JP S558069 A JPS558069 A JP S558069A JP 8115878 A JP8115878 A JP 8115878A JP 8115878 A JP8115878 A JP 8115878A JP S558069 A JPS558069 A JP S558069A
- Authority
- JP
- Japan
- Prior art keywords
- type
- range
- ranges
- corrector
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: For raising integration degree when making IC's, to eliminate epitaxial layer and separation diffusion by making selective diffusion of a plurality of P+- type corrector ranges, an N+-type base range inside said corrector ranges, an N+- type emitter range inside said base range on an N+-type semiconductor substrate.
CONSTITUTION: Selective diffusion is made of a plurality of P+-type corrector ranges 20, an N+-type base range 6, and a P+-type emitter range 7, the latter inside the former in the order of mention, on an N+-type semiconductor substrate 1. Thereafter, an IC having a PNP type transistor by providing a corrector electrode 9, a base electrode 10 and an emitter electrode 11 at ranges 20, 6 and 7 respectively, and fitting a substrate electrode 12 on the reverse side of said substrate 1. Thereby, neither epitaxial growth nor element separation diffusion range is required so that chip can be reduced in size.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8115878A JPS558069A (en) | 1978-07-03 | 1978-07-03 | Manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8115878A JPS558069A (en) | 1978-07-03 | 1978-07-03 | Manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS558069A true JPS558069A (en) | 1980-01-21 |
Family
ID=13738629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8115878A Pending JPS558069A (en) | 1978-07-03 | 1978-07-03 | Manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS558069A (en) |
-
1978
- 1978-07-03 JP JP8115878A patent/JPS558069A/en active Pending
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