JPS57133660A - Controlling method for resistance value of polycrystalline semiconductor - Google Patents
Controlling method for resistance value of polycrystalline semiconductorInfo
- Publication number
- JPS57133660A JPS57133660A JP1878681A JP1878681A JPS57133660A JP S57133660 A JPS57133660 A JP S57133660A JP 1878681 A JP1878681 A JP 1878681A JP 1878681 A JP1878681 A JP 1878681A JP S57133660 A JPS57133660 A JP S57133660A
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- layer
- impurity
- polycrystalline semiconductor
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000004913 activation Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To control the resistance value of a poly Si resistor with high accuracy by implanting impurity ions in a polycrystalline semiconductor film, executing activation treatment so that the distribution of an impurity is not changed and thermally treating the surface so that desired resistance value is obtained. CONSTITUTION:An insulating film 2 made of SiO2, Si3N4, etc. is formed to a substrate such as an Si substrate 1, a poly Si layer 3 is deposited and patterned, and a fixed quantity of the impurity ions of As, P, B, etc. are inplanted. Beams such as laser beams 5 are irradiated (or through heat treatment in the short time of approximately several sec at 900 deg.C or higher), and an activated layer 6 is shaped to the upper section of the layer 3. The surface is thermally treated at the low temperature of 400-800 deg.C, the impurity in the activated layer 6 is diffused while the resistance value is controlled and a resistance layer 7 is shaped. Accordingly, the resistance value of the high resistance body is precisely controlled and can be obtained while the body can be treated at a low temperature, thus enabling the control of the resistance value without changing the characteristics of the element prepared previously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1878681A JPS57133660A (en) | 1981-02-10 | 1981-02-10 | Controlling method for resistance value of polycrystalline semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1878681A JPS57133660A (en) | 1981-02-10 | 1981-02-10 | Controlling method for resistance value of polycrystalline semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57133660A true JPS57133660A (en) | 1982-08-18 |
Family
ID=11981291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1878681A Pending JPS57133660A (en) | 1981-02-10 | 1981-02-10 | Controlling method for resistance value of polycrystalline semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57133660A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5965462A (en) * | 1982-10-06 | 1984-04-13 | Nec Corp | Semiconductor device |
| JPS60262453A (en) * | 1984-05-30 | 1985-12-25 | ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド | Method of forming resistor in polysilicon and semiconductor element |
| JPS61160961A (en) * | 1985-01-08 | 1986-07-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JP2017517147A (en) * | 2014-05-30 | 2017-06-22 | サンパワー コーポレイション | Relative dopant concentration level in solar cells |
-
1981
- 1981-02-10 JP JP1878681A patent/JPS57133660A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5965462A (en) * | 1982-10-06 | 1984-04-13 | Nec Corp | Semiconductor device |
| JPS60262453A (en) * | 1984-05-30 | 1985-12-25 | ソーン、イーエムアイ、ノース、アメリカ、インコーポレーテッド | Method of forming resistor in polysilicon and semiconductor element |
| JPS61160961A (en) * | 1985-01-08 | 1986-07-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JP2017517147A (en) * | 2014-05-30 | 2017-06-22 | サンパワー コーポレイション | Relative dopant concentration level in solar cells |
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